MURA140T3G
  • Share:

onsemi MURA140T3G

Manufacturer No:
MURA140T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 2A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURA140T3G is a high-performance, ultra-fast recovery power rectifier diode produced by onsemi. This component is designed for high-voltage, high-frequency rectification and is ideal for applications requiring compact size and weight. It features a small, surface-mountable package with J-bend leads, making it suitable for automated handling and surface mount applications.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM400V
Average Rectified Forward Current @ TL = 150°CIF(AV)1.0A
Non-Repetitive Peak Surge CurrentIFSM35A
Operating Junction Temperature RangeTJ-65 to +175°C
Maximum Instantaneous Forward Voltage @ 1.0 A, TJ = 25°CvF1.1V
Maximum Reverse Recovery Timetrr65ns
Thermal Resistance, Junction-to-AmbientRθJA216°C/W

Key Features

  • Small compact surface mountable package with J-bend leads, ideal for automated handling.
  • High temperature glass passivated junction.
  • Low forward voltage drop (0.89 V Max @ 1.0 A, TJ = 150°C).
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • ESD protection: Human Body Model > 4000 V (Class 3), Charged Device Model > 1000 V (Class C5).

Applications

The MURA140T3G is ideally suited for high-voltage, high-frequency rectification applications. It can be used as free-wheeling and protection diodes in surface mount applications where compact size and weight are critical. Typical applications include power supplies, DC-DC converters, and other high-frequency switching circuits.

Q & A

  1. What is the peak repetitive reverse voltage of the MURA140T3G? The peak repetitive reverse voltage is 400 V.
  2. What is the average rectified forward current at TL = 150°C? The average rectified forward current at TL = 150°C is 1.0 A.
  3. What is the maximum non-repetitive peak surge current? The maximum non-repetitive peak surge current is 35 A.
  4. What is the operating junction temperature range? The operating junction temperature range is -65 to +175°C.
  5. What is the maximum instantaneous forward voltage at 1.0 A and TJ = 25°C? The maximum instantaneous forward voltage at 1.0 A and TJ = 25°C is 1.1 V.
  6. What is the maximum reverse recovery time? The maximum reverse recovery time is 65 ns.
  7. Is the MURA140T3G RoHS compliant? Yes, the MURA140T3G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  8. What kind of ESD protection does the MURA140T3G offer? The MURA140T3G offers ESD protection with a Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V (Class C5).
  9. Is the MURA140T3G suitable for automotive applications? Yes, the MURA140T3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  10. What is the thermal resistance, junction-to-ambient, of the MURA140T3G? The thermal resistance, junction-to-ambient, is 216 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):65 ns
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.47
1,048

Please send RFQ , we will respond immediately.

Same Series
SURA8140T3G
SURA8140T3G
DIODE GEN PURP 400V 1A SMA
MURA130T3G
MURA130T3G
DIODE GEN PURP 300V 2A SMA
NRVUA140VT3G
NRVUA140VT3G
DIODE GEN PURP 400V 2A SMA
MURA130T3
MURA130T3
DIODE GEN PURP 300V 2A SMA
SURA8130T3G
SURA8130T3G
DIODE GEN PURP 300V 1A SMA

Similar Products

Part Number MURA140T3G MURA160T3G MURA240T3G MURS140T3G MURA110T3G MURA120T3G MURA130T3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 400 V 100 V 200 V 300 V
Current - Average Rectified (Io) 2A 1A 2A 1A 1A 1A (DC) 2A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.25 V @ 1 A 1.3 V @ 2 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.1 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 65 ns 75 ns 65 ns 75 ns 30 ns 35 ns 65 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 400 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 300 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AA, SMB DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMB SMA SMA SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK