MURA260T3G
  • Share:

onsemi MURA260T3G

Manufacturer No:
MURA260T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURA260T3G is a surface mount ultrafast power rectifier diode manufactured by onsemi. This component is designed for high voltage and high frequency rectification applications, making it ideal for use as free-wheeling and protection diodes. Its compact surface mount package with J-bend leads facilitates automated handling and integration into various electronic systems.

Key Specifications

ParameterValue
Voltage Rating (V)600 V
Current Rating (I)2 A
Package TypeSMA (Surface Mount)
Recovery Time (trr)Ultra-fast recovery
Junction Temperature (Tj)-55°C to 150°C
Lead TypeJ-bend leads

Key Features

  • Ultrafast recovery time, making it suitable for high frequency applications.
  • High temperature glass passivated junction for reliability and durability.
  • Compact surface mount package with J-bend leads for easy automated handling.
  • High voltage rating of 600 V and current rating of 2 A, suitable for various power rectification needs.

Applications

The MURA260T3G is used in a variety of applications, including:

  • High voltage and high frequency rectification circuits.
  • Free-wheeling diodes in power supplies and motor control systems.
  • Protection diodes in electronic circuits to prevent backflow of current.
  • Automotive and industrial power systems where high reliability and efficiency are required.

Q & A

  1. What is the voltage rating of the MURA260T3G?
    The voltage rating of the MURA260T3G is 600 V.
  2. What is the current rating of the MURA260T3G?
    The current rating of the MURA260T3G is 2 A.
  3. What type of package does the MURA260T3G use?
    The MURA260T3G uses a surface mount SMA package with J-bend leads.
  4. What is the recovery time of the MURA260T3G?
    The MURA260T3G has an ultra-fast recovery time.
  5. What is the junction temperature range of the MURA260T3G?
    The junction temperature range of the MURA260T3G is -55°C to 150°C.
  6. What are the typical applications of the MURA260T3G?
    The MURA260T3G is typically used in high voltage and high frequency rectification, free-wheeling diodes, and protection diodes in various electronic systems.
  7. Is the MURA260T3G suitable for automotive applications?
    Yes, the MURA260T3G is suitable for automotive and industrial power systems due to its high reliability and efficiency.
  8. What is the benefit of the high temperature glass passivated junction in the MURA260T3G?
    The high temperature glass passivated junction enhances the reliability and durability of the component.
  9. Can the MURA260T3G be used in automated assembly processes?
    Yes, the compact surface mount package with J-bend leads of the MURA260T3G facilitates automated handling.
  10. Where can I find detailed specifications for the MURA260T3G?
    Detailed specifications for the MURA260T3G can be found on the official onsemi website, as well as on distributor websites like Digi-Key and Mouser.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.52
1,137

Please send RFQ , we will respond immediately.

Same Series
SURA8260T3G
SURA8260T3G
DIODE GEN PURP 600V 2A SMA
MURA260T3
MURA260T3
DIODE GEN PURP 600V 2A SMA

Similar Products

Part Number MURA260T3G MURA160T3G MURA210T3G MURA220T3G MURA230T3G MURA240T3G MURA260T3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 100 V 200 V 300 V 400 V 600 V
Current - Average Rectified (Io) 2A 1A 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.25 V @ 1 A 940 mV @ 2 A 950 mV @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 30 ns 35 ns 65 ns 65 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 300 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA SMA SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3