MURA210T3G
  • Share:

onsemi MURA210T3G

Manufacturer No:
MURA210T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 2A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURA210T3G is a high-performance, ultra-fast recovery power rectifier produced by onsemi. This component is designed for high voltage, high frequency rectification and is also suitable for use as free-wheeling and protection diodes in surface mount applications. The MURA210T3G features a compact, surface mountable package with J-bend leads, making it ideal for systems where space and weight are critical.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM 100 V
DC Blocking Voltage VR 100 V
Average Rectified Forward Current @ TL = 155°C IF(AV) 1.0 A
Average Rectified Forward Current @ TL = 135°C IF(AV) 2.0 A
Non-Repetitive Peak Surge Current IFSM 50 A
Operating Junction Temperature Range TJ −65 to +175 °C
Maximum Instantaneous Forward Voltage @ 2.0 A, TJ = 25°C vF 0.94 V
Maximum Instantaneous Forward Voltage @ 2.0 A, TJ = 150°C vF 0.74 V
Maximum Reverse Recovery Time trr 30 ns
Thermal Resistance, Junction-to-Lead PsiJL 24 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 216 °C/W

Key Features

  • Small Compact Surface Mountable Package with J-bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (0.74 V Max @ 2.0 A, TJ = 150°C)
  • AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements
  • All Packages are Pb-Free, Halogen Free/BFR Free and RoHS Compliant
  • ESD Protection: Human Body Model > 4000 V (Class 3), Charged Device Model > 1000 V
  • Corrosion Resistant and Readily Solderable Terminal Leads
  • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

Applications

The MURA210T3G is ideally suited for high voltage, high frequency rectification applications. It can be used as free-wheeling and protection diodes in surface mount applications where compact size and weight are critical. Typical applications include:

  • High frequency switching power supplies
  • DC-DC converters
  • Automotive systems requiring AEC-Q101 qualification
  • Protection circuits in electronic devices
  • General purpose rectification in compact designs

Q & A

  1. What is the peak repetitive reverse voltage of the MURA210T3G?

    The peak repetitive reverse voltage (VRRM) of the MURA210T3G is 100 V.

  2. What is the average rectified forward current at TL = 155°C?

    The average rectified forward current (IF(AV)) at TL = 155°C is 1.0 A.

  3. What is the maximum instantaneous forward voltage at 2.0 A and TJ = 25°C?

    The maximum instantaneous forward voltage (vF) at 2.0 A and TJ = 25°C is 0.94 V.

  4. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is 216 °C/W.

  5. Is the MURA210T3G RoHS compliant?
  6. What is the operating junction temperature range of the MURA210T3G?

    The operating junction temperature range (TJ) is −65 to +175 °C.

  7. What is the maximum reverse recovery time?

    The maximum reverse recovery time (trr) is 30 ns.

  8. Is the MURA210T3G suitable for automotive applications?
  9. What is the ESD protection level of the MURA210T3G?

    The MURA210T3G has ESD protection levels of Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V.

  10. What is the lead and mounting surface temperature for soldering purposes?

    The lead and mounting surface temperature for soldering purposes is 260°C Max. for 10 seconds.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:940 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:2 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.45
568

Please send RFQ , we will respond immediately.

Same Series
MURA205T3G
MURA205T3G
DIODE GEN PURP 50V 2A SMA
NRVUA210VT3G
NRVUA210VT3G
DIODE GEN PURP 100V 2A SMA
MURA210T3
MURA210T3
DIODE GEN PURP 100V 2A SMA
MURA205T3
MURA205T3
DIODE GEN PURP 50V 2A SMA
SURA8205T3G
SURA8205T3G
DIODE GEN PURP 50V 2A SMA
SURA8210T3G
SURA8210T3G
DIODE GEN PURP 100V 2A SMA

Similar Products

Part Number MURA210T3G MURA215T3G MURA220T3G MURA260T3G MURA240T3G MURA230T3G MURA110T3G MURA210T3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 150 V 200 V 600 V 400 V 300 V 100 V 100 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A 2A 1A 2A
Voltage - Forward (Vf) (Max) @ If 940 mV @ 2 A 950 mV @ 2 A 950 mV @ 2 A 1.45 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 875 mV @ 1 A 940 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 35 ns 35 ns 75 ns 65 ns 65 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 100 V 2 µA @ 150 V 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 300 V 2 µA @ 100 V 2 µA @ 100 V
Capacitance @ Vr, F - - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA SMA SMA SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5