MURA220T3G
  • Share:

onsemi MURA220T3G

Manufacturer No:
MURA220T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURA220T3G is a high-performance, ultra-fast recovery power rectifier diode manufactured by onsemi. This component is designed for high voltage and high frequency rectification applications, as well as for use as free-wheeling and protection diodes in surface mount configurations. The MURA220T3G is particularly suited for systems where compact size and weight are critical.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM 200 V
DC Blocking Voltage VR 200 V
Average Rectified Forward Current @ TL = 155°C IF(AV) 1.0 A
Average Rectified Forward Current @ TL = 135°C IF(AV) 2.0 A
Non-Repetitive Peak Surge Current IFSM 40 A
Operating Junction Temperature Range TJ −65 to +175 °C
Maximum Instantaneous Forward Voltage @ 2.0 A, TJ = 25°C vF 0.95 V
Maximum Instantaneous Forward Voltage @ 2.0 A, TJ = 150°C vF 0.77 V
Maximum Reverse Recovery Time trr 35 ns
Thermal Resistance, Junction−to−Lead PsiJL 24 °C/W
Thermal Resistance, Junction−to−Ambient R�JA 216 °C/W

Key Features

  • Small compact surface mountable package with J−bend leads, ideal for automated handling.
  • High temperature glass passivated junction for reliability and durability.
  • Low forward voltage drop (0.77 V max @ 2.0 A, TJ = 150°C) for efficient operation.
  • AEC−Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  • Pb−free, halogen free/BFR free, and RoHS compliant.
  • ESD protection: Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V (Class C5).
  • Corrosion-resistant finish and readily solderable terminal leads.

Applications

The MURA220T3G is ideally suited for various applications including:

  • High voltage and high frequency rectification.
  • Free-wheeling and protection diodes in surface mount configurations.
  • Automotive and other applications requiring unique site and control change requirements.
  • General-purpose rectification in power supplies, DC-DC converters, and other electronic systems where compact size and high efficiency are essential.

Q & A

  1. What is the peak repetitive reverse voltage of the MURA220T3G?

    The peak repetitive reverse voltage (VRRM) is 200 V.

  2. What is the average rectified forward current at TL = 155°C?

    The average rectified forward current (IF(AV)) at TL = 155°C is 1.0 A.

  3. What is the maximum instantaneous forward voltage at 2.0 A and TJ = 150°C?

    The maximum instantaneous forward voltage (vF) at 2.0 A and TJ = 150°C is 0.77 V.

  4. What is the maximum reverse recovery time of the MURA220T3G?

    The maximum reverse recovery time (trr) is 35 ns.

  5. Is the MURA220T3G RoHS compliant?
  6. What is the thermal resistance, junction−to−ambient of the MURA220T3G?

    The thermal resistance, junction−to−ambient (R�JA) is 216 °C/W.

  7. What are the ESD protection ratings for the MURA220T3G?

    The ESD protection ratings are Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V (Class C5).

  8. What is the operating junction temperature range of the MURA220T3G?

    The operating junction temperature range (TJ) is −65 to +175 °C.

  9. Is the MURA220T3G suitable for automotive applications?
  10. What is the non-repetitive peak surge current of the MURA220T3G?

    The non-repetitive peak surge current (IFSM) is 40 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.42
484

Please send RFQ , we will respond immediately.

Same Series
MURA215T3G
MURA215T3G
DIODE GEN PURP 150V 2A SMA
NRVUA220VT3G
NRVUA220VT3G
DIODE GEN PURP 200V 2A SMA
SURA8215T3G
SURA8215T3G
DIODE GEN PURP 150V 2A SMA
SURA8220T3G
SURA8220T3G
DIODE GEN PURP 200V 2A SMA

Similar Products

Part Number MURA220T3G MURA260T3G MURA240T3G MURA230T3G MURA120T3G MURA210T3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 300 V 200 V 100 V
Current - Average Rectified (Io) 2A 2A 2A 2A 1A (DC) 2A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A 1.45 V @ 2 A 1.3 V @ 2 A 1.3 V @ 2 A 875 mV @ 1 A 940 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 65 ns 65 ns 35 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 300 V 2 µA @ 200 V 2 µA @ 100 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK