NRVUA220VT3G
  • Share:

onsemi NRVUA220VT3G

Manufacturer No:
NRVUA220VT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVUA220VT3G is a high-efficiency, ultra-fast recovery diode produced by onsemi. This component is designed for high-voltage, high-frequency rectification and is suitable for various surface mount applications where compact size and weight are critical. The diode features a small, compact SMA (DO-214AC) package with J-bend leads, making it ideal for automated handling and assembly. It is also RoHS compliant, Pb-free, and halogen-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

ParameterValueUnit
Peak Repetitive Reverse Voltage (VRRM)200V
Average Rectified Forward Current (IF(AV)) @ TL = 155°C2.0A
Non-Repetitive Peak Surge Current (IFSM)40A
Operating Junction Temperature Range (TJ)−65 to +175°C
Maximum Instantaneous Forward Voltage (VF) @ IF = 2.0 A, TJ = 25°C0.95V
Maximum Reverse Recovery Time (trr)35ns
Thermal Resistance, Junction-to-Lead (PsiJL)24°C/W
Thermal Resistance, Junction-to-Ambient (RJA)216°C/W
PackageSMA (DO-214AC)
ESD ProtectionHuman Body Model > 4000 V (Class 3), Charged Device Model > 1000 V (Class C5)

Key Features

  • Ultra-Fast Recovery Time: The NRVUA220VT3G features a maximum reverse recovery time of 35 ns, making it suitable for high-frequency applications.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 0.95 V at 2.0 A and 25°C, this diode minimizes power losses.
  • High Temperature Glass Passivated Junction: Ensures reliability and stability over a wide temperature range.
  • Compact Surface Mount Package: The SMA package with J-bend leads is designed for automated handling and is ideal for space-constrained applications.
  • Environmental Compliance: RoHS compliant, Pb-free, and halogen-free, ensuring environmental sustainability.
  • ESD Protection: Offers robust ESD protection with Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V (Class C5).

Applications

The NRVUA220VT3G is ideally suited for a variety of applications, including:

  • High-Voltage, High-Frequency Rectification: Used in power supplies, inverters, and other high-frequency rectification applications.
  • Free Wheeling and Protection Diodes: Employed in surface mount applications to protect against transient voltages and provide a high impedance path for large currents.
  • Automotive and Industrial Systems: AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Telecommunication and Optoelectronics: Can be used in telecommunication systems, fiber-optic communication, and optoelectronic devices due to its fast recovery and low forward voltage drop.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVUA220VT3G?
    The peak repetitive reverse voltage (VRRM) is 200 V.
  2. What is the average rectified forward current of the NRVUA220VT3G at 155°C?
    The average rectified forward current (IF(AV)) at 155°C is 2.0 A.
  3. What is the maximum reverse recovery time of the NRVUA220VT3G?
    The maximum reverse recovery time (trr) is 35 ns.
  4. Is the NRVUA220VT3G RoHS compliant?
    Yes, the NRVUA220VT3G is RoHS compliant, Pb-free, and halogen-free.
  5. What is the operating junction temperature range of the NRVUA220VT3G?
    The operating junction temperature range (TJ) is −65 to +175°C.
  6. What is the maximum instantaneous forward voltage of the NRVUA220VT3G at 2.0 A and 25°C?
    The maximum instantaneous forward voltage (VF) at 2.0 A and 25°C is 0.95 V.
  7. What type of package does the NRVUA220VT3G use?
    The NRVUA220VT3G uses an SMA (DO-214AC) package with J-bend leads.
  8. Is the NRVUA220VT3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  9. What is the ESD protection level of the NRVUA220VT3G?
    The NRVUA220VT3G offers ESD protection with Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V (Class C5).
  10. What are some common applications of the NRVUA220VT3G?
    Common applications include high-voltage, high-frequency rectification, free wheeling and protection diodes, automotive and industrial systems, and telecommunication and optoelectronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.45
1,740

Please send RFQ , we will respond immediately.

Same Series
MURA215T3G
MURA215T3G
DIODE GEN PURP 150V 2A SMA
NRVUA220VT3G
NRVUA220VT3G
DIODE GEN PURP 200V 2A SMA
SURA8215T3G
SURA8215T3G
DIODE GEN PURP 150V 2A SMA
SURA8220T3G
SURA8220T3G
DIODE GEN PURP 200V 2A SMA

Similar Products

Part Number NRVUA220VT3G NRVUS220VT3G NRVUA120VT3G NRVUA210VT3G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 100 V
Current - Average Rectified (Io) 2A 2A 1A (DC) 2A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A 950 mV @ 2 A 875 mV @ 1 A 940 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 2 µA @ 200 V 2 µA @ 200 V 2 µA @ 100 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AA, SMB DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMB SMA SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK