NRVUA220VT3G
  • Share:

onsemi NRVUA220VT3G

Manufacturer No:
NRVUA220VT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVUA220VT3G is a high-efficiency, ultra-fast recovery diode produced by onsemi. This component is designed for high-voltage, high-frequency rectification and is suitable for various surface mount applications where compact size and weight are critical. The diode features a small, compact SMA (DO-214AC) package with J-bend leads, making it ideal for automated handling and assembly. It is also RoHS compliant, Pb-free, and halogen-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

ParameterValueUnit
Peak Repetitive Reverse Voltage (VRRM)200V
Average Rectified Forward Current (IF(AV)) @ TL = 155°C2.0A
Non-Repetitive Peak Surge Current (IFSM)40A
Operating Junction Temperature Range (TJ)−65 to +175°C
Maximum Instantaneous Forward Voltage (VF) @ IF = 2.0 A, TJ = 25°C0.95V
Maximum Reverse Recovery Time (trr)35ns
Thermal Resistance, Junction-to-Lead (PsiJL)24°C/W
Thermal Resistance, Junction-to-Ambient (RJA)216°C/W
PackageSMA (DO-214AC)
ESD ProtectionHuman Body Model > 4000 V (Class 3), Charged Device Model > 1000 V (Class C5)

Key Features

  • Ultra-Fast Recovery Time: The NRVUA220VT3G features a maximum reverse recovery time of 35 ns, making it suitable for high-frequency applications.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 0.95 V at 2.0 A and 25°C, this diode minimizes power losses.
  • High Temperature Glass Passivated Junction: Ensures reliability and stability over a wide temperature range.
  • Compact Surface Mount Package: The SMA package with J-bend leads is designed for automated handling and is ideal for space-constrained applications.
  • Environmental Compliance: RoHS compliant, Pb-free, and halogen-free, ensuring environmental sustainability.
  • ESD Protection: Offers robust ESD protection with Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V (Class C5).

Applications

The NRVUA220VT3G is ideally suited for a variety of applications, including:

  • High-Voltage, High-Frequency Rectification: Used in power supplies, inverters, and other high-frequency rectification applications.
  • Free Wheeling and Protection Diodes: Employed in surface mount applications to protect against transient voltages and provide a high impedance path for large currents.
  • Automotive and Industrial Systems: AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Telecommunication and Optoelectronics: Can be used in telecommunication systems, fiber-optic communication, and optoelectronic devices due to its fast recovery and low forward voltage drop.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVUA220VT3G?
    The peak repetitive reverse voltage (VRRM) is 200 V.
  2. What is the average rectified forward current of the NRVUA220VT3G at 155°C?
    The average rectified forward current (IF(AV)) at 155°C is 2.0 A.
  3. What is the maximum reverse recovery time of the NRVUA220VT3G?
    The maximum reverse recovery time (trr) is 35 ns.
  4. Is the NRVUA220VT3G RoHS compliant?
    Yes, the NRVUA220VT3G is RoHS compliant, Pb-free, and halogen-free.
  5. What is the operating junction temperature range of the NRVUA220VT3G?
    The operating junction temperature range (TJ) is −65 to +175°C.
  6. What is the maximum instantaneous forward voltage of the NRVUA220VT3G at 2.0 A and 25°C?
    The maximum instantaneous forward voltage (VF) at 2.0 A and 25°C is 0.95 V.
  7. What type of package does the NRVUA220VT3G use?
    The NRVUA220VT3G uses an SMA (DO-214AC) package with J-bend leads.
  8. Is the NRVUA220VT3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  9. What is the ESD protection level of the NRVUA220VT3G?
    The NRVUA220VT3G offers ESD protection with Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V (Class C5).
  10. What are some common applications of the NRVUA220VT3G?
    Common applications include high-voltage, high-frequency rectification, free wheeling and protection diodes, automotive and industrial systems, and telecommunication and optoelectronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.45
1,740

Please send RFQ , we will respond immediately.

Same Series
MURA215T3G
MURA215T3G
DIODE GEN PURP 150V 2A SMA
NRVUA220VT3G
NRVUA220VT3G
DIODE GEN PURP 200V 2A SMA
SURA8215T3G
SURA8215T3G
DIODE GEN PURP 150V 2A SMA
SURA8220T3G
SURA8220T3G
DIODE GEN PURP 200V 2A SMA

Similar Products

Part Number NRVUA220VT3G NRVUS220VT3G NRVUA120VT3G NRVUA210VT3G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 100 V
Current - Average Rectified (Io) 2A 2A 1A (DC) 2A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A 950 mV @ 2 A 875 mV @ 1 A 940 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 2 µA @ 200 V 2 µA @ 200 V 2 µA @ 100 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AA, SMB DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMB SMA SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD