MURS120HE3/52T
  • Share:

Vishay General Semiconductor - Diodes Division MURS120HE3/52T

Manufacturer No:
MURS120HE3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS120HE3/52T is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is part of Vishay's extensive range of discrete semiconductor products, known for their reliability and performance in various electronic systems.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 40 A
Maximum Instantaneous Forward Voltage VF 0.71 V
Maximum Reverse Recovery Time trr 25 ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package Type SMB (DO-214AA)

Key Features

  • Glass Passivated Pellet Chip Junction: Ensures high reliability and stability.
  • Ideal for Automated Placement: Suitable for high-volume manufacturing processes.
  • Ultrafast Reverse Recovery Time: Minimizes switching losses and enhances efficiency.
  • Low Switching Losses, High Efficiency: Optimized for high-frequency applications.
  • High Forward Surge Capability: Handles peak current surges effectively.
  • AEC-Q101 Qualified: Available for automotive applications with the HE3 suffix.
  • RoHS-Compliant: Meets environmental standards for lead-free soldering.
  • Meets MSL Level 1, per J-STD-020: Ensures reliability in various environmental conditions.

Applications

The MURS120HE3/52T is primarily used in high-frequency rectification and freewheeling applications within switching mode converters and inverters. These applications include:

  • Consumer electronics
  • Computer systems
  • Telecommunication equipment
  • Automotive systems (with AEC-Q101 qualification)

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120HE3/52T?

    200 V

  2. What is the maximum average forward rectified current of this diode?

    1.0 A

  3. What is the peak forward surge current rating of the MURS120HE3/52T?

    40 A

  4. What is the typical reverse recovery time of this diode?

    25 ns

  5. Is the MURS120HE3/52T RoHS-compliant?
  6. What is the operating junction and storage temperature range of the MURS120HE3/52T?

    -65 to +175 °C

  7. What package type does the MURS120HE3/52T use?

    SMB (DO-214AA)

  8. Is the MURS120HE3/52T suitable for automotive applications?
  9. What are some typical applications of the MURS120HE3/52T?

    High-frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication systems.

  10. Does the MURS120HE3/52T meet MSL level 1, per J-STD-020?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
538

Please send RFQ , we will respond immediately.

Same Series
MURS120-E3/52T
MURS120-E3/52T
DIODE GP 200V 1A DO214AA
MURS120-E3/5BT
MURS120-E3/5BT
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/H
MURS120HE3_A/H
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/I
MURS120HE3_A/I
DIODE GEN PURP 200V 2A DO214AA
MURS120/2
MURS120/2
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3/5BT
MURS120HE3/5BT
DIODE GEN PURP 200V 2A DO214AA

Similar Products

Part Number MURS120HE3/52T MURS120HE3/5BT MURS160HE3/52T MURS140HE3/52T MURS120-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 600 V 400 V 200 V
Current - Average Rectified (Io) 2A 2A 2A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 75 ns 75 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

SM6T36CA-M3/5B
SM6T36CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM15T100CA-M3/9AT
SM15T100CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM6T10AHE3/5B
SM6T10AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T15CAHE3/5B
SM6T15CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T220AHM3/I
SM6T220AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAV99-HE3-08
BAV99-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 150MA SOT23
MBR1545CT801HE3/45
MBR1545CT801HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
BAS85-GS08
BAS85-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD80
BAS21-E3-18
BAS21-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
1N4937GPEHE3/91
1N4937GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BZX884B12L-HG3-08
BZX884B12L-HG3-08
Vishay General Semiconductor - Diodes Division
ZENER DIODE DFN1006-2A
BZX84C27-G3-08
BZX84C27-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3