MURS140HE3/52T
  • Share:

Vishay General Semiconductor - Diodes Division MURS140HE3/52T

Manufacturer No:
MURS140HE3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS140HE3/52T is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pellet chip junction, making it ideal for automated placement and high-efficiency operations.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 400 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 35 A
Maximum Instantaneous Forward Voltage VF 1.25 V
Maximum Reverse Recovery Time trr 75 ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-214AA (SMB)
Mounting Type Surface Mount

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified (for automotive applications)
  • RoHS-compliant

Applications

The MURS140HE3/52T is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. These applications include consumer electronics, computer systems, and telecommunication equipment.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS140HE3/52T?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current of the MURS140HE3/52T?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current of the MURS140HE3/52T?

    The peak forward surge current is 35 A.

  4. What is the maximum instantaneous forward voltage of the MURS140HE3/52T?

    The maximum instantaneous forward voltage is 1.25 V.

  5. What is the reverse recovery time of the MURS140HE3/52T?

    The maximum reverse recovery time is 75 ns.

  6. What is the operating junction and storage temperature range of the MURS140HE3/52T?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. What package type does the MURS140HE3/52T use?

    The package type is DO-214AA (SMB).

  8. Is the MURS140HE3/52T RoHS-compliant?
  9. Is the MURS140HE3/52T AEC-Q101 qualified?
  10. What are the typical applications of the MURS140HE3/52T?

    The typical applications include high-frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
449

Please send RFQ , we will respond immediately.

Same Series
1123338-1
1123338-1
CONN PLUG HSG 35POS 2.20MM

Similar Products

Part Number MURS140HE3/52T MURS140HE3/5BT MURS160HE3/52T MURS240HE3/52T MURS120HE3/52T MURS140-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 400 V 200 V 400 V
Current - Average Rectified (Io) 1A 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.45 V @ 2 A 875 mV @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 35 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 2 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC

Related Product By Brand

SM15T6V8A-E3/57T
SM15T6V8A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM6T30CA-E3/5B
SM6T30CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T220CAHE3/5B
SM6T220CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T33CAHE3/5B
SM6T33CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T7V5AHE3_A/H
SM15T7V5AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
BAT43W-G3-08
BAT43W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT42W-HE3-18
BAT42W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BZX84C18-E3-08
BZX84C18-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84C4V3-E3-18
BZX84C4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84C30-HE3-08
BZX84C30-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84C51-G3-08
BZX84C51-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX384B3V0-HE3-08
BZX384B3V0-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323