Overview
The SBAS20HT1G is a high voltage switching diode produced by onsemi. This diode is designed for high voltage applications and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
The device features a continuous reverse voltage rating of 200 Vdc and a continuous forward current of 200 mA, with a peak forward surge current of 625 mA. It is packaged in a SOD-323 case, which is compact and suitable for a variety of applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Continuous Reverse Voltage | VR | 200 | Vdc |
| Repetitive Peak Reverse Voltage | VRRM | 200 | Vdc |
| Continuous Forward Current | IF | 200 | mAdc |
| Peak Forward Surge Current | IFM(surge) | 625 | mAdc |
| Repetitive Peak Forward Current | IFRM | 500 | mA |
| Non-Repetitive Peak Forward Current | IFSM | 5.0 A (t = 1 μs), 2.0 A (t = 1 ms), 0.5 A (t = 1 s) | A |
| Reverse Voltage Leakage Current | IR | 1.0 μA (VR = 200 Vdc, TJ = 25°C), 100 μA (VR = 200 Vdc, TJ = 150°C) | μAdc |
| Forward Voltage | VF | 1000 mV (IF = 100 mA), 1250 mV (IF = 200 mA) | mV |
| Diode Capacitance | CD | 5.0 pF (VR = 0, f = 1.0 MHz) | pF |
| Reverse Recovery Time | trr | 50 ns (IF = IR = 30 mA, RL = 100 Ω) | ns |
| Thermal Resistance Junction-to-Ambient | RθJA | 635 °C/W | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 °C | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
- High voltage ratings with continuous reverse voltage and repetitive peak reverse voltage of 200 Vdc.
- Compact SOD-323 package, ideal for space-constrained designs.
- Low forward voltage drop and fast reverse recovery time, enhancing performance in switching applications.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- High voltage switching: Ideal for applications requiring high voltage switching, such as power supplies and voltage regulators.
- Rectification: Used in rectifier circuits where high voltage and low forward voltage drop are necessary.
- General-purpose switching: Applicable in general-purpose switching applications where reliability and high voltage handling are critical.
Q & A
- What is the continuous reverse voltage rating of the SBAS20HT1G diode?
The continuous reverse voltage rating is 200 Vdc.
- What is the maximum continuous forward current for the SBAS20HT1G?
The maximum continuous forward current is 200 mA.
- Is the SBAS20HT1G diode RoHS compliant?
Yes, the SBAS20HT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the thermal resistance junction-to-ambient for the SBAS20HT1G?
The thermal resistance junction-to-ambient is 635 °C/W.
- What is the junction and storage temperature range for the SBAS20HT1G?
The junction and storage temperature range is -55 to +150 °C.
- What is the reverse recovery time of the SBAS20HT1G diode?
The reverse recovery time is 50 ns (IF = IR = 30 mA, RL = 100 Ω).
- What package type is the SBAS20HT1G diode available in?
The SBAS20HT1G is available in a SOD-323 package.
- Is the SBAS20HT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the peak forward surge current rating for the SBAS20HT1G?
The peak forward surge current rating is 625 mA.
- What is the diode capacitance of the SBAS20HT1G at 1 MHz?
The diode capacitance is 5.0 pF at 1 MHz.
