SBAS20LT1G
  • Share:

onsemi SBAS20LT1G

Manufacturer No:
SBAS20LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBAS20LT1G is a high voltage switching diode produced by onsemi, designed for high voltage, high speed switching applications. This device is part of the BAS20L series and is encapsulated in a SOT-23 surface mount package. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for a wide range of applications, including automotive and other sectors requiring unique site and control change requirements. The SBAS20LT1G is AEC-Q101 qualified and PPAP capable, ensuring high reliability and performance standards.

Key Specifications

CharacteristicSymbolValueUnit
Continuous Reverse VoltageVR200Vdc
Repetitive Peak Reverse VoltageVRRM200Vdc
Continuous Forward CurrentIF200mAdc
Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz)IFSM2A
Repetitive Peak Forward Current (Pulse Train: TON = 1 s, TOFF = 0.5 s)IFRM0.6A
Junction and Storage Temperature RangeTJ, Tstg−55 to +150°C
Power DissipationPD385mW
Forward Voltage (IF = 100 mAdc)VF1.25Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz)CD5.0pF
Reverse Recovery Timetrr50ns

Key Features

  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • High voltage switching capability with a continuous reverse voltage of 200 Vdc.
  • High speed switching with a reverse recovery time of 50 ns.
  • Low forward voltage drop of 1.25 Vdc at 100 mAdc.
  • Compact SOT-23 surface mount package.
  • Wide operating temperature range from −55°C to +150°C.

Applications

The SBAS20LT1G is suitable for a variety of high voltage, high speed switching applications, including:

  • Automotive systems requiring high reliability and compliance with automotive standards.
  • Industrial power supplies and switching circuits.
  • Consumer electronics needing high voltage protection and switching.
  • Telecommunication equipment for signal switching and protection.
  • General-purpose high voltage switching in various electronic devices.

Q & A

  1. What is the continuous reverse voltage rating of the SBAS20LT1G?
    The continuous reverse voltage rating is 200 Vdc.
  2. What is the maximum forward current for the SBAS20LT1G?
    The maximum continuous forward current is 200 mAdc.
  3. What is the peak forward surge current for the SBAS20LT1G?
    The peak forward surge current is 2 A (1/2 cycle, sine wave, 60 Hz).
  4. What is the junction and storage temperature range for the SBAS20LT1G?
    The junction and storage temperature range is −55°C to +150°C.
  5. Is the SBAS20LT1G RoHS compliant?
    Yes, the SBAS20LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  6. What is the reverse recovery time of the SBAS20LT1G?
    The reverse recovery time is 50 ns.
  7. What package type is the SBAS20LT1G available in?
    The SBAS20LT1G is available in a SOT-23 surface mount package.
  8. Is the SBAS20LT1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  9. What is the forward voltage drop at 100 mAdc for the SBAS20LT1G?
    The forward voltage drop at 100 mAdc is 1.25 Vdc.
  10. What is the diode capacitance of the SBAS20LT1G at 1 MHz?
    The diode capacitance is 5.0 pF at VR = 0 and f = 1.0 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.34
529

Please send RFQ , we will respond immediately.

Same Series
SBAS21DW5T1G
SBAS21DW5T1G
DIODE ARRAY GP 250V 200MA SC88A
SBAS21DW5T3G
SBAS21DW5T3G
DIODE ARRAY 250V 200MA SC88A
BAS20LT1G
BAS20LT1G
DIODE GP 200V 200MA SOT23-3
NSVBAS19LT1G
NSVBAS19LT1G
DIODE GP 120V 200MA SOT23-3
BAS19LT3G
BAS19LT3G
DIODE GP 120V 200MA SOT23-3
BAS20LT3G
BAS20LT3G
DIODE GP 200V 200MA SOT23-3
BAS19LT1G
BAS19LT1G
DIODE GP 120V 200MA SOT23-3
SBAS21LT3G
SBAS21LT3G
DIODE GP 250V 200MA SOT23-3
SBAS21LT1G
SBAS21LT1G
DIODE GEN PURP 250V 200MA SOT23
SBAS20LT1G
SBAS20LT1G
DIODE GEN PURP 200V 200MA SOT23
NSVBAS20LT3G
NSVBAS20LT3G
DIODE GP 200V 200MA SOT23-3
BAS20LT1
BAS20LT1
DIODE SWITCH 200MA 200V SOT23

Similar Products

Part Number SBAS20LT1G SBAS21LT1G SBAS40LT1G SBAS20HT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type Standard Standard Schottky Standard
Voltage - DC Reverse (Vr) (Max) 200 V 250 V 40 V 200 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 120mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1 V @ 40 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns - 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 200 V 1 µA @ 25 V 1 µA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 1V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-76, SOD-323
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC