RB751S-40GJTE61
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Rohm Semiconductor RB751S-40GJTE61

Manufacturer No:
RB751S-40GJTE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40GJTE61 is a Schottky barrier diode produced by Rohm Semiconductor. This component is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an ultra-small mold type package, making it ideal for space-constrained designs in handheld and portable devices.

Key Specifications

Parameter Symbol Value Unit Conditions
Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 200 mA 60Hz/1 cycle
Junction Temperature Tj 125 °C
Storage Temperature Tstg -40 to +125 °C
Forward Voltage VF 0.28 - 0.37 V IF = 1 mA
Reverse Current IR 0.5 μA VR = 30 V
Capacitance between terminals Ct 2 pF VR = 1 V, f = 1 MHz

Key Features

  • Ultra small mold type (EMD2, SOD-523)
  • Extremely low forward voltage (VF) - 0.28 to 0.37 V at IF = 1 mA
  • High reliability and low reverse current
  • Lead-free plating and RoHS compliant
  • Halogen-free and BFR-free
  • Fast switching speed, suitable for high-speed applications
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications

Applications

  • High-speed switching applications
  • Circuit protection
  • Voltage clamping
  • Handheld and portable devices where space is limited
  • Automotive and other applications requiring high reliability and specific site and control change requirements

Q & A

  1. What is the peak reverse voltage of the RB751S-40GJTE61?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the maximum forward continuous current for this diode?

    The maximum forward continuous current (IF) is 30 mA.

  3. What is the typical forward voltage of the RB751S-40GJTE61?

    The typical forward voltage (VF) is 0.28 to 0.37 V at IF = 1 mA.

  4. What is the maximum junction temperature for this component?

    The maximum junction temperature (Tj) is 125°C.

  5. Is the RB751S-40GJTE61 RoHS compliant?
  6. What are the typical applications for this diode?

    Typical applications include high-speed switching, circuit protection, voltage clamping, and use in handheld and portable devices.

  7. What is the package type of the RB751S-40GJTE61?

    The package type is SOD-523 (EMD2).

  8. What is the reverse current at 30 V for this diode?

    The reverse current (IR) is 0.5 μA at VR = 30 V.

  9. Is the RB751S-40GJTE61 suitable for automotive applications?
  10. What is the capacitance between terminals at 1 MHz?

    The capacitance between terminals (Ct) is 2 pF at VR = 1 V and f = 1 MHz.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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