RB751S-40GJTE61
  • Share:

Rohm Semiconductor RB751S-40GJTE61

Manufacturer No:
RB751S-40GJTE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40GJTE61 is a Schottky barrier diode produced by Rohm Semiconductor. This component is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an ultra-small mold type package, making it ideal for space-constrained designs in handheld and portable devices.

Key Specifications

Parameter Symbol Value Unit Conditions
Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 200 mA 60Hz/1 cycle
Junction Temperature Tj 125 °C
Storage Temperature Tstg -40 to +125 °C
Forward Voltage VF 0.28 - 0.37 V IF = 1 mA
Reverse Current IR 0.5 μA VR = 30 V
Capacitance between terminals Ct 2 pF VR = 1 V, f = 1 MHz

Key Features

  • Ultra small mold type (EMD2, SOD-523)
  • Extremely low forward voltage (VF) - 0.28 to 0.37 V at IF = 1 mA
  • High reliability and low reverse current
  • Lead-free plating and RoHS compliant
  • Halogen-free and BFR-free
  • Fast switching speed, suitable for high-speed applications
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications

Applications

  • High-speed switching applications
  • Circuit protection
  • Voltage clamping
  • Handheld and portable devices where space is limited
  • Automotive and other applications requiring high reliability and specific site and control change requirements

Q & A

  1. What is the peak reverse voltage of the RB751S-40GJTE61?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the maximum forward continuous current for this diode?

    The maximum forward continuous current (IF) is 30 mA.

  3. What is the typical forward voltage of the RB751S-40GJTE61?

    The typical forward voltage (VF) is 0.28 to 0.37 V at IF = 1 mA.

  4. What is the maximum junction temperature for this component?

    The maximum junction temperature (Tj) is 125°C.

  5. Is the RB751S-40GJTE61 RoHS compliant?
  6. What are the typical applications for this diode?

    Typical applications include high-speed switching, circuit protection, voltage clamping, and use in handheld and portable devices.

  7. What is the package type of the RB751S-40GJTE61?

    The package type is SOD-523 (EMD2).

  8. What is the reverse current at 30 V for this diode?

    The reverse current (IR) is 0.5 μA at VR = 30 V.

  9. Is the RB751S-40GJTE61 suitable for automotive applications?
  10. What is the capacitance between terminals at 1 MHz?

    The capacitance between terminals (Ct) is 2 pF at VR = 1 V and f = 1 MHz.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
433

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

BAT54CHMT116
BAT54CHMT116
Rohm Semiconductor
BAT54CHM IS SCHOTTKY BARRIER DIO
BAS40-04HYT116
BAS40-04HYT116
Rohm Semiconductor
40V, 120MA, SOT-23, SERIES CONNE
BAV70T116
BAV70T116
Rohm Semiconductor
DIODE ARRAY GP 70V 215MA SSD3
BAS16HMT116
BAS16HMT116
Rohm Semiconductor
BAS16HM IS HIGH RELIABILITY AND
RB751V-40TE-17
RB751V-40TE-17
Rohm Semiconductor
DIODE SCHOTTKY 30V 30MA UMD2
BZX84C3V6LYT116
BZX84C3V6LYT116
Rohm Semiconductor
250MW, 3.6V, SOT-23, ZENER DIODE
BZX84C24VLYT116
BZX84C24VLYT116
Rohm Semiconductor
250MW, 24V, SOT-23, ZENER DIODE
BCX56-16T100
BCX56-16T100
Rohm Semiconductor
TRANS NPN 80V 1A MPT3
BC807-25T116
BC807-25T116
Rohm Semiconductor
TRANS PNP 45V 0.5A SMT3
BSS84AHZGT116
BSS84AHZGT116
Rohm Semiconductor
PCH -60V -0.23A, SOT-23, SMALL S
LM2904FVJ-E2
LM2904FVJ-E2
Rohm Semiconductor
IC OPAMP GP 2 CIRCUIT 8TSSOP
BD6794EFV-E2
BD6794EFV-E2
Rohm Semiconductor
IC MOTOR DRIVER 18V-32V 40HTSSOP