RB751S-40GJTE61
  • Share:

Rohm Semiconductor RB751S-40GJTE61

Manufacturer No:
RB751S-40GJTE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40GJTE61 is a Schottky barrier diode produced by Rohm Semiconductor. This component is designed for high-speed switching applications, circuit protection, and voltage clamping. It features an ultra-small mold type package, making it ideal for space-constrained designs in handheld and portable devices.

Key Specifications

Parameter Symbol Value Unit Conditions
Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 200 mA 60Hz/1 cycle
Junction Temperature Tj 125 °C
Storage Temperature Tstg -40 to +125 °C
Forward Voltage VF 0.28 - 0.37 V IF = 1 mA
Reverse Current IR 0.5 μA VR = 30 V
Capacitance between terminals Ct 2 pF VR = 1 V, f = 1 MHz

Key Features

  • Ultra small mold type (EMD2, SOD-523)
  • Extremely low forward voltage (VF) - 0.28 to 0.37 V at IF = 1 mA
  • High reliability and low reverse current
  • Lead-free plating and RoHS compliant
  • Halogen-free and BFR-free
  • Fast switching speed, suitable for high-speed applications
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications

Applications

  • High-speed switching applications
  • Circuit protection
  • Voltage clamping
  • Handheld and portable devices where space is limited
  • Automotive and other applications requiring high reliability and specific site and control change requirements

Q & A

  1. What is the peak reverse voltage of the RB751S-40GJTE61?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the maximum forward continuous current for this diode?

    The maximum forward continuous current (IF) is 30 mA.

  3. What is the typical forward voltage of the RB751S-40GJTE61?

    The typical forward voltage (VF) is 0.28 to 0.37 V at IF = 1 mA.

  4. What is the maximum junction temperature for this component?

    The maximum junction temperature (Tj) is 125°C.

  5. Is the RB751S-40GJTE61 RoHS compliant?
  6. What are the typical applications for this diode?

    Typical applications include high-speed switching, circuit protection, voltage clamping, and use in handheld and portable devices.

  7. What is the package type of the RB751S-40GJTE61?

    The package type is SOD-523 (EMD2).

  8. What is the reverse current at 30 V for this diode?

    The reverse current (IR) is 0.5 μA at VR = 30 V.

  9. Is the RB751S-40GJTE61 suitable for automotive applications?
  10. What is the capacitance between terminals at 1 MHz?

    The capacitance between terminals (Ct) is 2 pF at VR = 1 V and f = 1 MHz.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
433

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

BAW56HYFHT116
BAW56HYFHT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA
BAS21HYT116
BAS21HYT116
Rohm Semiconductor
200V, 200MA, SOT-23, SINGLE, SWI
RB751S-40FJTE61
RB751S-40FJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
BZX84B11VLYT116
BZX84B11VLYT116
Rohm Semiconductor
250MW, 11V, SOT-23, ZENER DIODE
BZX84C11VLFHT116
BZX84C11VLFHT116
Rohm Semiconductor
DIODE ZENER 11V 250MW SSD3
BZX84C3V3LT116
BZX84C3V3LT116
Rohm Semiconductor
DIODE ZENER 3.3V 250MW SSD3
BZX84C3V9LT116
BZX84C3V9LT116
Rohm Semiconductor
DIODE ZENER 3.9V 250MW SSD3
BZX84B8V2LFHT116
BZX84B8V2LFHT116
Rohm Semiconductor
DIODE ZENER 8.2V 250MW SSD3
BC858BHZGT116
BC858BHZGT116
Rohm Semiconductor
TRANS PNP 30V 0.1A SST3
BSS84AHZGT116
BSS84AHZGT116
Rohm Semiconductor
PCH -60V -0.23A, SOT-23, SMALL S
BSS84T116
BSS84T116
Rohm Semiconductor
MOSFET P-CH 60V 230MA SST3
LM339FV-E2
LM339FV-E2
Rohm Semiconductor
LM339FV IS QUAD-CHANNEL GROUND S