BC858BWT106
  • Share:

Rohm Semiconductor BC858BWT106

Manufacturer No:
BC858BWT106
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A UMT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858BWT106 is a PNP general-purpose bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. This transistor is designed for use in a variety of electronic applications, offering a balance of high performance and reliability. It is packaged in a compact SC70 (SOT323) surface-mount package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (BVCEO)-30V (IC = -1mA)
Collector Current (IC)100 mA
Power Dissipation (Pd)350 mW
Transition Frequency (fT)250 MHz
Package TypeSC70 (SOT323), Surface Mount

Key Features

  • Compact SC70 (SOT323) surface-mount package for space-saving designs.
  • High collector-base voltage (BVCEO) of -30V, suitable for various applications.
  • Low power dissipation of 350 mW, contributing to energy efficiency.
  • High transition frequency (fT) of 250 MHz, ensuring good high-frequency performance.
  • Complements BC848B/BC848BW transistors, offering flexibility in design.

Applications

The BC858BWT106 transistor is versatile and can be used in a wide range of electronic devices and systems, including:

  • Audio and visual equipment.
  • General-purpose switching and amplification circuits.
  • Automotive and industrial control systems.
  • Consumer electronics such as home appliances and personal devices.

Q & A

  1. What is the collector-base voltage (BVCEO) of the BC858BWT106 transistor?
    The collector-base voltage (BVCEO) is -30V at IC = -1mA.
  2. What is the maximum collector current (IC) of the BC858BWT106?
    The maximum collector current (IC) is 100 mA.
  3. What is the power dissipation (Pd) of the BC858BWT106?
    The power dissipation (Pd) is 350 mW.
  4. What is the transition frequency (fT) of the BC858BWT106?
    The transition frequency (fT) is 250 MHz.
  5. What package type is the BC858BWT106 available in?
    The BC858BWT106 is available in the SC70 (SOT323) surface-mount package.
  6. What are some common applications of the BC858BWT106 transistor?
    Common applications include audio and visual equipment, general-purpose switching and amplification circuits, automotive and industrial control systems, and consumer electronics.
  7. Does the BC858BWT106 complement other transistors?
    Yes, it complements the BC848B/BC848BW transistors.
  8. Who is the manufacturer of the BC858BWT106 transistor?
    The manufacturer is ROHM Semiconductor.
  9. Where can I purchase the BC858BWT106 transistor?
    You can purchase it from various electronic component distributors such as Digi-Key, TME, and others.
  10. What are the key benefits of using the BC858BWT106 transistor?
    The key benefits include its compact package, high performance, and reliability, making it suitable for a variety of electronic applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:210 @ 2mA, 5V
Power - Max:350 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:UMT3
0 Remaining View Similar

In Stock

$0.10
7,836

Please send RFQ , we will respond immediately.

Same Series
BC858BT116
BC858BT116
TRANS PNP 30V 0.1A SST3

Related Product By Categories

BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3

Related Product By Brand

MMBZ5V6ALT116
MMBZ5V6ALT116
Rohm Semiconductor
TVS DIODE 3VWM 8VC SSD3
BAS116HYT116
BAS116HYT116
Rohm Semiconductor
LOW-LEAKAGE, 80V, 215MA, SOT-23,
BAS16HYT116
BAS16HYT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA
RB751S-40FVTE61
RB751S-40FVTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
RB751S-409HHTE61
RB751S-409HHTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
BZX84B9V1LFHT116
BZX84B9V1LFHT116
Rohm Semiconductor
DIODE ZENER 9.1V 250MW SSD3
BZX84B5V1LYT116
BZX84B5V1LYT116
Rohm Semiconductor
250MW, 5.1V, SOT-23, ZENER DIODE
BC848BHZGT116
BC848BHZGT116
Rohm Semiconductor
TRANS NPN 30V 0.1A SST3
LM324F-GE2
LM324F-GE2
Rohm Semiconductor
IC OPAMP GP 4 CIRCUIT 14SOP
LM2901FJ-E2
LM2901FJ-E2
Rohm Semiconductor
GROUND SENSE COMPARATOR
LM2903FJ-E2
LM2903FJ-E2
Rohm Semiconductor
GROUND SENSE COMPARATOR : LM2903
BD14000EFV-CH2
BD14000EFV-CH2
Rohm Semiconductor
CELL BALANCE LSI OF 4 TO 6 SERIE