1N4148,133
  • Share:

NXP USA Inc. 1N4148,133

Manufacturer No:
1N4148,133
Manufacturer:
NXP USA Inc.
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 100V 200MA ALF2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148,133 diode, produced by NXP USA Inc., is a high-speed switching diode that belongs to the silicon switching diode family. It is fabricated in planar technology and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. This diode is widely used in various applications requiring fast switching and high reliability.

Key Specifications

ParameterRatingConditions
Repetitive Peak Reverse Voltage (VRRM)100 V
Continuous Reverse Voltage (VR)100 V
Continuous Forward Current (IF)200 mA@ 25°C
Repetitive Peak Forward Current (IFRM)450 mA
Non-Repetitive Peak Forward Current (IFSM)4 A (t = 1 µs), 1 A (t = 1 ms), 0.5 A (t = 1 s)
Forward Voltage Drop (VF)1 V@ IF = 10 mA
Reverse Current (IR)25 nA@ VR = 20 V, Tj = 25°C
Reverse Recovery Time (trr)4 ns
Diode Capacitance (Cd)4 pF@ f = 1 MHz, VR = 0 V
Storage Temperature (Tstg)-65°C to +200°C
Junction Temperature (Tj)-200°C

Key Features

  • High Switching Speed: Maximum of 4 ns, making it suitable for high-speed switching applications.
  • Hermetically Sealed Package: Encapsulated in a leaded glass SOD27 (DO-35) package.
  • Low Forward Voltage Drop: Typically 1 V at 10 mA forward current.
  • Low Leakage Current: Very low reverse current, helping maintain signal integrity.
  • Compact Package: Small DO-35 glass package ideal for compact designs.
  • High Reliability and Availability: Long-established component with high reliability and wide availability.
  • Wide Application Compatibility: Suitable for various applications including signal processing, logic gates, and protection circuits.

Applications

  • Signal Processing and Rectification: Excels in signal processing due to its fast switching characteristics and low forward voltage drop. Used in rectification circuits for converting AC signals to DC.
  • Logic Gate Implementation: Used in digital circuits to implement logic gates such as diode-transistor logic (DTL) and diode-logic systems.
  • Protection Circuits: Used in protection circuits to safeguard sensitive components from voltage spikes and reverse current.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4148 diode?
    The maximum repetitive peak reverse voltage is 100 V.
  2. What is the continuous forward current rating of the 1N4148 diode?
    The continuous forward current rating is 200 mA at 25°C.
  3. What is the reverse recovery time of the 1N4148 diode?
    The reverse recovery time is typically 4 ns.
  4. In what type of package is the 1N4148 diode encapsulated?
    The 1N4148 diode is encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
  5. What are the typical applications of the 1N4148 diode?
    Typical applications include signal processing, logic gate implementation, and protection circuits.
  6. What is the forward voltage drop of the 1N4148 diode at 10 mA forward current?
    The forward voltage drop is typically 1 V at 10 mA forward current.
  7. What is the maximum storage temperature for the 1N4148 diode?
    The maximum storage temperature is +200°C, and the minimum is -65°C.
  8. How does the 1N4148 diode handle high-frequency switching?
    The 1N4148 diode excels in high-frequency switching due to its high switching speed and low reverse recovery time.
  9. What is the peak forward surge current capability of the 1N4148 diode?
    The peak forward surge current capability is 450 mA for 1 second.
  10. Why is the 1N4148 diode preferred in precision analog circuits?
    The 1N4148 diode is preferred due to its very low leakage current, which helps maintain signal integrity in precision analog circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:25 nA @ 20 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:ALF2
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.02
11,786

Please send RFQ , we will respond immediately.

Same Series
1N4448,143
1N4448,143
DIODE GEN PURP 100V 200MA DO35
1N4448,133
1N4448,133
DIODE GEN PURP 100V 200MA ALF2
1N4448,113
1N4448,113
DIODE GEN PURP 100V 200MA ALF2
1N4148,143
1N4148,143
DIODE GEN PURP 100V 200MA ALF2
1N4148,113
1N4148,113
DIODE GEN PURP 100V 200MA ALF2

Similar Products

Part Number 1N4148,133 1N4148,143 1N4148,113
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Discontinued at Digi-Key
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 10 mA 1 V @ 10 mA 1 V @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 25 nA @ 20 V 25 nA @ 20 V 25 nA @ 20 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package ALF2 ALF2 ALF2
Operating Temperature - Junction - 200°C (Max) 200°C (Max)

Related Product By Categories

BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

S9S12G48F0MLFR
S9S12G48F0MLFR
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
TJA1042T/3,118
TJA1042T/3,118
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
SC16C652BIB48,128
SC16C652BIB48,128
NXP USA Inc.
IC ENCODER/DECODER IRDA 48LQFP
SC28L198A1A,529
SC28L198A1A,529
NXP USA Inc.
IC UART OCTAL SOT189-3
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74AHC244PW-Q100118
74AHC244PW-Q100118
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
MFRC63002HN,551
MFRC63002HN,551
NXP USA Inc.
IC RFID READER 13.56MHZ 32HVQFN
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX