1N4148,133
  • Share:

NXP USA Inc. 1N4148,133

Manufacturer No:
1N4148,133
Manufacturer:
NXP USA Inc.
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 100V 200MA ALF2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148,133 diode, produced by NXP USA Inc., is a high-speed switching diode that belongs to the silicon switching diode family. It is fabricated in planar technology and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. This diode is widely used in various applications requiring fast switching and high reliability.

Key Specifications

ParameterRatingConditions
Repetitive Peak Reverse Voltage (VRRM)100 V
Continuous Reverse Voltage (VR)100 V
Continuous Forward Current (IF)200 mA@ 25°C
Repetitive Peak Forward Current (IFRM)450 mA
Non-Repetitive Peak Forward Current (IFSM)4 A (t = 1 µs), 1 A (t = 1 ms), 0.5 A (t = 1 s)
Forward Voltage Drop (VF)1 V@ IF = 10 mA
Reverse Current (IR)25 nA@ VR = 20 V, Tj = 25°C
Reverse Recovery Time (trr)4 ns
Diode Capacitance (Cd)4 pF@ f = 1 MHz, VR = 0 V
Storage Temperature (Tstg)-65°C to +200°C
Junction Temperature (Tj)-200°C

Key Features

  • High Switching Speed: Maximum of 4 ns, making it suitable for high-speed switching applications.
  • Hermetically Sealed Package: Encapsulated in a leaded glass SOD27 (DO-35) package.
  • Low Forward Voltage Drop: Typically 1 V at 10 mA forward current.
  • Low Leakage Current: Very low reverse current, helping maintain signal integrity.
  • Compact Package: Small DO-35 glass package ideal for compact designs.
  • High Reliability and Availability: Long-established component with high reliability and wide availability.
  • Wide Application Compatibility: Suitable for various applications including signal processing, logic gates, and protection circuits.

Applications

  • Signal Processing and Rectification: Excels in signal processing due to its fast switching characteristics and low forward voltage drop. Used in rectification circuits for converting AC signals to DC.
  • Logic Gate Implementation: Used in digital circuits to implement logic gates such as diode-transistor logic (DTL) and diode-logic systems.
  • Protection Circuits: Used in protection circuits to safeguard sensitive components from voltage spikes and reverse current.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4148 diode?
    The maximum repetitive peak reverse voltage is 100 V.
  2. What is the continuous forward current rating of the 1N4148 diode?
    The continuous forward current rating is 200 mA at 25°C.
  3. What is the reverse recovery time of the 1N4148 diode?
    The reverse recovery time is typically 4 ns.
  4. In what type of package is the 1N4148 diode encapsulated?
    The 1N4148 diode is encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
  5. What are the typical applications of the 1N4148 diode?
    Typical applications include signal processing, logic gate implementation, and protection circuits.
  6. What is the forward voltage drop of the 1N4148 diode at 10 mA forward current?
    The forward voltage drop is typically 1 V at 10 mA forward current.
  7. What is the maximum storage temperature for the 1N4148 diode?
    The maximum storage temperature is +200°C, and the minimum is -65°C.
  8. How does the 1N4148 diode handle high-frequency switching?
    The 1N4148 diode excels in high-frequency switching due to its high switching speed and low reverse recovery time.
  9. What is the peak forward surge current capability of the 1N4148 diode?
    The peak forward surge current capability is 450 mA for 1 second.
  10. Why is the 1N4148 diode preferred in precision analog circuits?
    The 1N4148 diode is preferred due to its very low leakage current, which helps maintain signal integrity in precision analog circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:25 nA @ 20 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:ALF2
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.02
11,786

Please send RFQ , we will respond immediately.

Same Series
1N4448,143
1N4448,143
DIODE GEN PURP 100V 200MA DO35
1N4448,133
1N4448,133
DIODE GEN PURP 100V 200MA ALF2
1N4448,113
1N4448,113
DIODE GEN PURP 100V 200MA ALF2
1N4148,143
1N4148,143
DIODE GEN PURP 100V 200MA ALF2
1N4148,113
1N4148,113
DIODE GEN PURP 100V 200MA ALF2

Similar Products

Part Number 1N4148,133 1N4148,143 1N4148,113
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Discontinued at Digi-Key
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 10 mA 1 V @ 10 mA 1 V @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 25 nA @ 20 V 25 nA @ 20 V 25 nA @ 20 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package ALF2 ALF2 ALF2
Operating Temperature - Junction - 200°C (Max) 200°C (Max)

Related Product By Categories

BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
PMBT3906/TE1215
PMBT3906/TE1215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MCHC908QT2CDWER
MCHC908QT2CDWER
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8SO
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
UJA1023T/2R04/C;51
UJA1023T/2R04/C;51
NXP USA Inc.
IC CAN/LIN I/O SLAVE 16-SOIC
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
UJA1061TW/5V0/C/T518
UJA1061TW/5V0/C/T518
NXP USA Inc.
FAULT-TOLERANT CAN/LIN FAIL-SAFE
BGU7258X
BGU7258X
NXP USA Inc.
IC RF AMP ISM 5GHZ-6GHZ 6HXSON