1N4148,133
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NXP USA Inc. 1N4148,133

Manufacturer No:
1N4148,133
Manufacturer:
NXP USA Inc.
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 100V 200MA ALF2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148,133 diode, produced by NXP USA Inc., is a high-speed switching diode that belongs to the silicon switching diode family. It is fabricated in planar technology and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. This diode is widely used in various applications requiring fast switching and high reliability.

Key Specifications

ParameterRatingConditions
Repetitive Peak Reverse Voltage (VRRM)100 V
Continuous Reverse Voltage (VR)100 V
Continuous Forward Current (IF)200 mA@ 25°C
Repetitive Peak Forward Current (IFRM)450 mA
Non-Repetitive Peak Forward Current (IFSM)4 A (t = 1 µs), 1 A (t = 1 ms), 0.5 A (t = 1 s)
Forward Voltage Drop (VF)1 V@ IF = 10 mA
Reverse Current (IR)25 nA@ VR = 20 V, Tj = 25°C
Reverse Recovery Time (trr)4 ns
Diode Capacitance (Cd)4 pF@ f = 1 MHz, VR = 0 V
Storage Temperature (Tstg)-65°C to +200°C
Junction Temperature (Tj)-200°C

Key Features

  • High Switching Speed: Maximum of 4 ns, making it suitable for high-speed switching applications.
  • Hermetically Sealed Package: Encapsulated in a leaded glass SOD27 (DO-35) package.
  • Low Forward Voltage Drop: Typically 1 V at 10 mA forward current.
  • Low Leakage Current: Very low reverse current, helping maintain signal integrity.
  • Compact Package: Small DO-35 glass package ideal for compact designs.
  • High Reliability and Availability: Long-established component with high reliability and wide availability.
  • Wide Application Compatibility: Suitable for various applications including signal processing, logic gates, and protection circuits.

Applications

  • Signal Processing and Rectification: Excels in signal processing due to its fast switching characteristics and low forward voltage drop. Used in rectification circuits for converting AC signals to DC.
  • Logic Gate Implementation: Used in digital circuits to implement logic gates such as diode-transistor logic (DTL) and diode-logic systems.
  • Protection Circuits: Used in protection circuits to safeguard sensitive components from voltage spikes and reverse current.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4148 diode?
    The maximum repetitive peak reverse voltage is 100 V.
  2. What is the continuous forward current rating of the 1N4148 diode?
    The continuous forward current rating is 200 mA at 25°C.
  3. What is the reverse recovery time of the 1N4148 diode?
    The reverse recovery time is typically 4 ns.
  4. In what type of package is the 1N4148 diode encapsulated?
    The 1N4148 diode is encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
  5. What are the typical applications of the 1N4148 diode?
    Typical applications include signal processing, logic gate implementation, and protection circuits.
  6. What is the forward voltage drop of the 1N4148 diode at 10 mA forward current?
    The forward voltage drop is typically 1 V at 10 mA forward current.
  7. What is the maximum storage temperature for the 1N4148 diode?
    The maximum storage temperature is +200°C, and the minimum is -65°C.
  8. How does the 1N4148 diode handle high-frequency switching?
    The 1N4148 diode excels in high-frequency switching due to its high switching speed and low reverse recovery time.
  9. What is the peak forward surge current capability of the 1N4148 diode?
    The peak forward surge current capability is 450 mA for 1 second.
  10. Why is the 1N4148 diode preferred in precision analog circuits?
    The 1N4148 diode is preferred due to its very low leakage current, which helps maintain signal integrity in precision analog circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:25 nA @ 20 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:ALF2
Operating Temperature - Junction:- 
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Similar Products

Part Number 1N4148,133 1N4148,143 1N4148,113
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Discontinued at Digi-Key
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 10 mA 1 V @ 10 mA 1 V @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 25 nA @ 20 V 25 nA @ 20 V 25 nA @ 20 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package ALF2 ALF2 ALF2
Operating Temperature - Junction - 200°C (Max) 200°C (Max)

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