MUR460 B0G
  • Share:

Taiwan Semiconductor Corporation MUR460 B0G

Manufacturer No:
MUR460 B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460 B0G, produced by Taiwan Semiconductor Corporation, is a high-performance fast recovery rectifier diode designed for various power management and rectification applications. This diode is part of the MUR460 series, known for its reliability and efficiency in handling high voltage and current requirements.

With its robust specifications and compact DO-201AD package, the MUR460 B0G is suitable for use in industrial, automotive, and consumer electronics. It offers excellent thermal and electrical characteristics, making it a versatile component for a wide range of applications.

Key Specifications

Parameter Value Unit
Repetitive Reverse Voltage (Vrrm Max) 600 V
Forward Current (If(AV)) 4 A
Diode Configuration Single -
Forward Voltage (VF Max) 1.35 V
Reverse Recovery Time (trr Max) 60 ns
Forward Surge Current (Ifsm Max) 150 A
Operating Temperature Max 150 °C
Diode Case Style DO-201AD -
No. of Pins 2 -
Termination Type Axial Leaded -
Junction Temperature (Tj Max) 150 °C
Junction Temperature (Tj Min) -65 °C
Junction to Case Thermal Resistance 28 °C/W
Operating Temperature Range -65 to +150 °C

Key Features

  • High Voltage and Current Handling: The MUR460 B0G can handle up to 600V repetitive reverse voltage and 4A forward current, making it suitable for high-power applications.
  • Fast Recovery Time: With a reverse recovery time of 50ns (typical) and 60ns (maximum), this diode ensures minimal switching losses and high efficiency.
  • Compact Package: The DO-201AD package is compact and suitable for through-hole mounting, making it easy to integrate into various designs.
  • Wide Operating Temperature Range: The diode operates over a temperature range of -65°C to +150°C, ensuring reliability in diverse environmental conditions.
  • Low Forward Voltage Drop: The maximum forward voltage drop of 1.35V minimizes power losses during operation.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and AC-DC converters due to its high voltage and current handling capabilities.
  • Automotive Systems: Can be used in automotive applications such as battery charging, power steering, and other high-power systems.
  • Industrial Electronics: Ideal for industrial control systems, motor drives, and other high-reliability applications.
  • Consumer Electronics: Used in various consumer electronic devices requiring efficient power management, such as TVs, computers, and home appliances.

Q & A

  1. What is the maximum repetitive reverse voltage of the MUR460 B0G diode?

    The maximum repetitive reverse voltage is 600V.

  2. What is the forward current rating of the MUR460 B0G diode?

    The forward current rating is 4A.

  3. What is the typical reverse recovery time of the MUR460 B0G diode?

    The typical reverse recovery time is 50ns.

  4. What is the maximum forward surge current of the MUR460 B0G diode?

    The maximum forward surge current is 150A.

  5. What is the operating temperature range of the MUR460 B0G diode?

    The operating temperature range is -65°C to +150°C.

  6. What type of package does the MUR460 B0G diode use?

    The diode uses a DO-201AD package with axial leads.

  7. What is the junction to case thermal resistance of the MUR460 B0G diode?

    The junction to case thermal resistance is 28°C/W.

  8. Is the MUR460 B0G diode suitable for automotive applications?

    Yes, it is suitable for automotive applications due to its high reliability and wide operating temperature range.

  9. What are some common applications of the MUR460 B0G diode?

    Common applications include power supplies, automotive systems, industrial electronics, and consumer electronics.

  10. What is the maximum forward voltage drop of the MUR460 B0G diode?

    The maximum forward voltage drop is 1.35V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.28 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
329

Please send RFQ , we will respond immediately.

Same Series
MUR420 A0G
MUR420 A0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HA0G
MUR420HA0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 A0G
MUR440 A0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HA0G
MUR440HA0G
DIODE GEN PURP 400V 4A DO201AD
MUR460HA0G
MUR460HA0G
DIODE GEN PURP 600V 4A DO201AD
MUR420 B0G
MUR420 B0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HB0G
MUR420HB0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 B0G
MUR440 B0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HB0G
MUR440HB0G
DIODE GEN PURP 400V 4A DO201AD
MUR460 B0G
MUR460 B0G
DIODE GEN PURP 600V 4A DO201AD
MUR460HB0G
MUR460HB0G
DIODE GEN PURP 600V 4A DO201AD

Similar Products

Part Number MUR460 B0G MUR460HB0G MUR4L60 B0G MUR420 B0G MUR440 B0G MUR460 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 200 V 400 V 600 V
Current - Average Rectified (Io) 4A 4A 4A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.28 V @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 890 mV @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 25 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

1.5KE6.8AHA0G
1.5KE6.8AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BAV70 RFG
BAV70 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
BAV99S REG
BAV99S REG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT363
BAS21W RVG
BAS21W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOT323
MUR460H
MUR460H
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4004GHR1G
1N4004GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N5821 A0G
1N5821 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR420S R6G
MUR420S R6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZV55B47 L0G
BZV55B47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZV55B15 L1G
BZV55B15 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BC847B RFG
BC847B RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23