MUR460 A0G
  • Share:

Taiwan Semiconductor Corporation MUR460 A0G

Manufacturer No:
MUR460 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 600V 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460 A0G, produced by Taiwan Semiconductor Corporation, is a high-performance general-purpose rectifier diode designed for various electrical and electronic applications. This diode is part of the DO-201AD package family and is known for its reliability and efficiency in high-frequency rectification and switching mode converters.

It features a maximum repetitive peak reverse voltage (VRRM) of 600V and a maximum average forward rectified current (IF(AV)) of 4.0A, making it suitable for a wide range of power management and conversion tasks.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 600
Maximum Average Forward Rectified Current IF(AV) A 4.0
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM A 150
Maximum Instantaneous Forward Voltage at IF = 4.0 A VF V 1.28
Maximum Reverse Recovery Time trr ns 50
Operating Junction and Storage Temperature Range TJ, TSTG °C -65 to +175
Package Type DO-201AD, Axial

Key Features

  • High Voltage and Current Capability: The MUR460 A0G can handle up to 600V and 4A, making it suitable for high-power applications.
  • Fast Recovery Time: With a maximum reverse recovery time of 50ns, this diode is ideal for high-frequency switching applications.
  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.28V at 4A, ensuring efficient operation.
  • Wide Operating Temperature Range: It operates within a temperature range of -65°C to +175°C, enhancing its reliability in various environments.
  • Axial Through-Hole Package: The DO-201AD package is convenient for through-hole mounting and provides good thermal dissipation.

Applications

  • Switching Mode Converters and Inverters: The MUR460 A0G is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters.
  • Power Management Systems: It is suitable for various power management systems due to its high voltage and current handling capabilities.
  • Consumer, Computer, and Telecommunication Equipment: The diode is used in these sectors for its reliability and efficiency in high-frequency operations.
  • General Rectification and Power Supply Applications: Its fast recovery time and low forward voltage drop make it a versatile component for general rectification tasks.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MUR460 A0G?

    The maximum repetitive peak reverse voltage (VRRM) is 600V.

  2. What is the maximum average forward rectified current of the MUR460 A0G?

    The maximum average forward rectified current (IF(AV)) is 4.0A.

  3. What is the peak forward surge current of the MUR460 A0G?

    The peak forward surge current (IFSM) is 150A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of the MUR460 A0G at 4A?

    The maximum instantaneous forward voltage (VF) at 4A is 1.28V.

  5. What is the maximum reverse recovery time of the MUR460 A0G?

    The maximum reverse recovery time (trr) is 50ns.

  6. What is the operating temperature range of the MUR460 A0G?

    The operating junction and storage temperature range is -65°C to +175°C.

  7. What type of package does the MUR460 A0G come in?

    The MUR460 A0G comes in a DO-201AD, axial through-hole package.

  8. What are some common applications of the MUR460 A0G?

    Common applications include switching mode converters, inverters, power management systems, and general rectification tasks.

  9. Why is the MUR460 A0G suitable for high-frequency applications?

    It is suitable due to its fast recovery time and low forward voltage drop.

  10. Where can I find detailed specifications and datasheets for the MUR460 A0G?

    Detailed specifications and datasheets can be found on the official Taiwan Semiconductor Corporation website, as well as on distributor websites like DigiKey and Newark element14.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.28 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$1.46
371

Please send RFQ , we will respond immediately.

Same Series
MUR420 A0G
MUR420 A0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HA0G
MUR420HA0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 A0G
MUR440 A0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HA0G
MUR440HA0G
DIODE GEN PURP 400V 4A DO201AD
MUR460HA0G
MUR460HA0G
DIODE GEN PURP 600V 4A DO201AD
MUR420 B0G
MUR420 B0G
DIODE GEN PURP 200V 4A DO201AD
MUR420HB0G
MUR420HB0G
DIODE GEN PURP 200V 4A DO201AD
MUR440 B0G
MUR440 B0G
DIODE GEN PURP 400V 4A DO201AD
MUR440HB0G
MUR440HB0G
DIODE GEN PURP 400V 4A DO201AD
MUR460 B0G
MUR460 B0G
DIODE GEN PURP 600V 4A DO201AD
MUR460HB0G
MUR460HB0G
DIODE GEN PURP 600V 4A DO201AD

Similar Products

Part Number MUR460 A0G MUR460HA0G MUR4L60 A0G MUR460 B0G MUR420 A0G MUR440 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 200 V 400 V
Current - Average Rectified (Io) 4A 4A 4A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.28 V @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 890 mV @ 4 A 1.28 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns 25 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

1.5KE6.8AHR0G
1.5KE6.8AHR0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
1.5KE6.8AH
1.5KE6.8AH
Taiwan Semiconductor Corporation
TVS 1500W 6.8V 5% UNIDIR DO-201
BAV99 RFG
BAV99 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MBR10100 C0G
MBR10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZX84C10 RFG
BZX84C10 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 300MW SOT23
BZV55B10 L1G
BZV55B10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZX585B8V2 RKG
BZX585B8V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F
BC846BW RFG
BC846BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT323