BAS40-06 RFG
  • Share:

Taiwan Semiconductor Corporation BAS40-06 RFG

Manufacturer No:
BAS40-06 RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 40V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-06 RFG is a Schottky barrier diode array produced by Taiwan Semiconductor Corporation. This component is designed for high-efficiency and low power loss applications. It features a 1 pair common anode configuration and is packaged in a SOT-23-3 surface mount package. The BAS40-06 RFG is AEC-Q101 qualified and RoHS compliant, ensuring its suitability for a wide range of automotive and industrial applications.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 40 V
Forward Current (IF(AV)) 200 mA
Non-Repetitive Peak Forward Surge Current (IFSM) 0.6 A
Junction Temperature Range (TJ) -65 to +125 °C
Storage Temperature Range (TSTG) -65 to +125 °C
Forward Voltage per Diode (VF) at IF = 1mA, TJ = 25°C 0.38 V
Forward Voltage per Diode (VF) at IF = 40mA, TJ = 25°C 1.00 V
Reverse Current per Diode (IR) at VR = 30V, TJ = 25°C 0.2 μA
Junction-to-Ambient Thermal Resistance (RθJA) 357 °C/W
Reverse Recovery Time (trr) 5.0 ns

Key Features

  • Low forward voltage drop, ensuring high efficiency and low power loss.
  • High forward surge capability and excellent high-temperature stability.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • RoHS compliant, adhering to environmental standards.
  • Surface mount SOT-23-3 package for compact and efficient design.
  • Fast reverse recovery time of 5.0 ns, enhancing switching performance.

Applications

  • Automotive systems, including power management and protection circuits.
  • Industrial power supplies and DC-DC converters.
  • Switching regulators and rectifier circuits.
  • High-frequency applications requiring low forward voltage drop and fast recovery times.

Q & A

  1. What is the repetitive peak reverse voltage of the BAS40-06 RFG?

    The repetitive peak reverse voltage (VRRM) is 40 V.

  2. What is the forward current rating of the BAS40-06 RFG?

    The forward current (IF(AV)) is 200 mA.

  3. What is the non-repetitive peak forward surge current of the BAS40-06 RFG?

    The non-repetitive peak forward surge current (IFSM) is 0.6 A.

  4. What is the junction temperature range of the BAS40-06 RFG?

    The junction temperature range (TJ) is -65 to +125 °C.

  5. Is the BAS40-06 RFG AEC-Q101 qualified?
  6. What is the forward voltage drop of the BAS40-06 RFG at 1 mA and 25 °C?

    The forward voltage drop (VF) at IF = 1 mA and TJ = 25 °C is 0.38 V.

  7. What is the reverse recovery time of the BAS40-06 RFG?

    The reverse recovery time (trr) is 5.0 ns.

  8. What package type is used for the BAS40-06 RFG?

    The BAS40-06 RFG is packaged in a SOT-23-3 surface mount package.

  9. Is the BAS40-06 RFG RoHS compliant?
  10. What are some typical applications of the BAS40-06 RFG?

    Typical applications include automotive systems, industrial power supplies, switching regulators, and high-frequency applications.

Product Attributes

Diode Configuration:1 Pair Common Anode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io) (per Diode):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:200 nA @ 30 V
Operating Temperature - Junction:-65°C ~ 125°C
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.06
461

Please send RFQ , we will respond immediately.

Same Series
BAS40-04 RFG
BAS40-04 RFG
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-05 RFG
BAS40-05 RFG
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-06 RFG
BAS40-06 RFG
DIODE ARRAY SCHOTTKY 40V SOT23

Similar Products

Part Number BAS40-06 RFG BAS40-04 RFG BAS40-05 RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Series Connection 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V
Current - Average Rectified (Io) (per Diode) 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 200 nA @ 30 V 200 nA @ 30 V 200 nA @ 30 V
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23 SOT-23

Related Product By Categories

BAT54S-AU_R1_000A1
BAT54S-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAV199-AQ
BAV199-AQ
Diotec Semiconductor
DIODE SOT-23 85V 0.14A 3NS
STPS40150CG-TR
STPS40150CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
BAT30CWFILM
BAT30CWFILM
STMicroelectronics
DIODE ARRAY SCHOTTKY 30V SOT323
BAS40DW-06-7-F
BAS40DW-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAT54V-TP
BAT54V-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT563
BAS40-05-HE3-18
BAS40-05-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
1PS76SB21
1PS76SB21
Nexperia USA Inc.
NOW NEXPERIA 1PS76SB21 - RECTIFI
BAW56TA
BAW56TA
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
MBRD660CTTR
MBRD660CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V 3A DPAK
NRVBD660CTT4G
NRVBD660CTT4G
onsemi
DIODE ARRAY SCHOTTKY 60V 3A DPAK
BAS40-04/ZLVL
BAS40-04/ZLVL
NXP USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT23

Related Product By Brand

MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
1N5406G B0G
1N5406G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR160AHB0G
MUR160AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR420HB0G
MUR420HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX84C24 RFG
BZX84C24 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 24V 300MW SOT23
BZV55B3V6 L1G
BZV55B3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
MMBT3906L RFG
MMBT3906L RFG
Taiwan Semiconductor Corporation
TRANS PNP 40V 0.2A SOT23
MMBT2222A RFG
MMBT2222A RFG
Taiwan Semiconductor Corporation
TRANS NPN 40V 0.6A SOT23
BC848BW RFG
BC848BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT323