1N5406GHB0G
  • Share:

Taiwan Semiconductor Corporation 1N5406GHB0G

Manufacturer No:
1N5406GHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5406GHB0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N5400 series, known for its high reliability and robust performance in various electrical systems. The 1N5406GHB0G is specifically designed to handle high voltage and current requirements, making it suitable for a wide range of applications, including power supplies, DC power systems, and automotive electronics.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 600 V
Maximum RMS Voltage (VRMS) 420 V
Maximum DC Blocking Voltage (VDC) 600 V
Maximum Average Forward Rectified Current (IF(AV)) 3.0 A
Peak Forward Surge Current (IFSM) 200 A
Maximum Full Load Reverse Current (IR(AV)) 500 μA
Operating Junction and Storage Temperature Range (TJ, TSTG) -50 to +150 °C
Maximum Instantaneous Forward Voltage (VF) 1.2 V
Package Type DO-201AD

Key Features

  • High Voltage Handling: The 1N5406GHB0G can handle a maximum repetitive peak reverse voltage of 600V, making it suitable for high-voltage applications.
  • High Current Capability: It has a maximum average forward rectified current of 3A, which is ideal for applications requiring significant current flow.
  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.2V, reducing energy losses in the system.
  • Robust Construction: The diode is housed in a molded epoxy body with matte tin plated leads, ensuring good solderability and reliability.
  • Compliance with Standards: The component meets UL 94 V-0 flammability rating and is RoHS-compliant, ensuring environmental and safety standards are met.

Applications

  • Power Supplies: Suitable for use in various power supply designs due to its high voltage and current handling capabilities.
  • DC Power Systems: Ideal for DC power systems, including rectification and filtering applications.
  • Automotive Electronics: Meets AEC-Q101 standards, making it suitable for use in automotive power electronics and other high-reliability applications.
  • Industrial Control Systems: Can be used in industrial control systems where high voltage and current rectification are required.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5406GHB0G diode?

    The maximum repetitive peak reverse voltage is 600V.

  2. What is the maximum average forward rectified current of the 1N5406GHB0G diode?

    The maximum average forward rectified current is 3A.

  3. What is the package type of the 1N5406GHB0G diode?

    The package type is DO-201AD.

  4. Is the 1N5406GHB0G diode RoHS-compliant?
  5. What is the maximum operating junction temperature of the 1N5406GHB0G diode?

    The maximum operating junction temperature is 150°C.

  6. What are some common applications of the 1N5406GHB0G diode?
  7. Does the 1N5406GHB0G meet any specific automotive standards?
  8. What is the maximum instantaneous forward voltage of the 1N5406GHB0G diode?

    The maximum instantaneous forward voltage is 1.2V.

  9. What is the peak forward surge current rating of the 1N5406GHB0G diode?

    The peak forward surge current rating is 200A.

  10. Is the 1N5406GHB0G diode suitable for high-voltage applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:25pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
270

Please send RFQ , we will respond immediately.

Same Series
1N5408G A0G
1N5408G A0G
DIODE GEN PURP 1KV 3A DO201AD
1N5406G A0G
1N5406G A0G
DIODE GEN PURP 600V 3A DO201AD
1N5401GHR0G
1N5401GHR0G
DIODE GEN PURP 100V 3A DO201AD
1N5400G A0G
1N5400G A0G
DIODE GEN PURP 50V 3A DO201AD
1N5404GHA0G
1N5404GHA0G
DIODE GEN PURP 400V 3A DO201AD
1N5407GHA0G
1N5407GHA0G
DIODE GEN PURP 800V 3A DO201AD
1N5408GHA0G
1N5408GHA0G
DIODE GEN PURP 3A DO201AD
1N5400GHB0G
1N5400GHB0G
DIODE GEN PURP 50V 3A DO201AD
1N5401GHB0G
1N5401GHB0G
DIODE GEN PURP 100V 3A DO201AD
1N5402GHB0G
1N5402GHB0G
DIODE GEN PURP 200V 3A DO201AD
1N5406GHB0G
1N5406GHB0G
DIODE GEN PURP 600V 3A DO201AD
1N5408GHB0G
1N5408GHB0G
DIODE GEN PURP 3A DO201AD

Similar Products

Part Number 1N5406GHB0G 1N5407GHB0G 1N5408GHB0G 1N5401GHB0G 1N5402GHB0G 1N5404GHB0G 1N5406G B0G 1N5406GHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V - 100 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

1.5KE120A B0G
1.5KE120A B0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
1.5KE120AHB0G
1.5KE120AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAV99L
BAV99L
Taiwan Semiconductor Corporation
SOT-23, 70V, 0.2A, SWITCHING DIO
MUR1660CTH
MUR1660CTH
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MUR420S R6G
MUR420S R6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZX585B8V2 RSG
BZX585B8V2 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F
BZV55C11 L1G
BZV55C11 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55C3V0 L1G
BZV55C3V0 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35
BC817-40W RFG
BC817-40W RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT323