1N5406GHB0G
  • Share:

Taiwan Semiconductor Corporation 1N5406GHB0G

Manufacturer No:
1N5406GHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5406GHB0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N5400 series, known for its high reliability and robust performance in various electrical systems. The 1N5406GHB0G is specifically designed to handle high voltage and current requirements, making it suitable for a wide range of applications, including power supplies, DC power systems, and automotive electronics.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 600 V
Maximum RMS Voltage (VRMS) 420 V
Maximum DC Blocking Voltage (VDC) 600 V
Maximum Average Forward Rectified Current (IF(AV)) 3.0 A
Peak Forward Surge Current (IFSM) 200 A
Maximum Full Load Reverse Current (IR(AV)) 500 μA
Operating Junction and Storage Temperature Range (TJ, TSTG) -50 to +150 °C
Maximum Instantaneous Forward Voltage (VF) 1.2 V
Package Type DO-201AD

Key Features

  • High Voltage Handling: The 1N5406GHB0G can handle a maximum repetitive peak reverse voltage of 600V, making it suitable for high-voltage applications.
  • High Current Capability: It has a maximum average forward rectified current of 3A, which is ideal for applications requiring significant current flow.
  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.2V, reducing energy losses in the system.
  • Robust Construction: The diode is housed in a molded epoxy body with matte tin plated leads, ensuring good solderability and reliability.
  • Compliance with Standards: The component meets UL 94 V-0 flammability rating and is RoHS-compliant, ensuring environmental and safety standards are met.

Applications

  • Power Supplies: Suitable for use in various power supply designs due to its high voltage and current handling capabilities.
  • DC Power Systems: Ideal for DC power systems, including rectification and filtering applications.
  • Automotive Electronics: Meets AEC-Q101 standards, making it suitable for use in automotive power electronics and other high-reliability applications.
  • Industrial Control Systems: Can be used in industrial control systems where high voltage and current rectification are required.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5406GHB0G diode?

    The maximum repetitive peak reverse voltage is 600V.

  2. What is the maximum average forward rectified current of the 1N5406GHB0G diode?

    The maximum average forward rectified current is 3A.

  3. What is the package type of the 1N5406GHB0G diode?

    The package type is DO-201AD.

  4. Is the 1N5406GHB0G diode RoHS-compliant?
  5. What is the maximum operating junction temperature of the 1N5406GHB0G diode?

    The maximum operating junction temperature is 150°C.

  6. What are some common applications of the 1N5406GHB0G diode?
  7. Does the 1N5406GHB0G meet any specific automotive standards?
  8. What is the maximum instantaneous forward voltage of the 1N5406GHB0G diode?

    The maximum instantaneous forward voltage is 1.2V.

  9. What is the peak forward surge current rating of the 1N5406GHB0G diode?

    The peak forward surge current rating is 200A.

  10. Is the 1N5406GHB0G diode suitable for high-voltage applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:25pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
270

Please send RFQ , we will respond immediately.

Same Series
1N5408G A0G
1N5408G A0G
DIODE GEN PURP 1KV 3A DO201AD
1N5406G A0G
1N5406G A0G
DIODE GEN PURP 600V 3A DO201AD
1N5407G A0G
1N5407G A0G
DIODE GEN PURP 800V 3A DO201AD
1N5401GHR0G
1N5401GHR0G
DIODE GEN PURP 100V 3A DO201AD
1N5402GHR0G
1N5402GHR0G
DIODE GEN PURP 200V 3A DO201AD
1N5401GHA0G
1N5401GHA0G
DIODE GEN PURP 100V 3A DO201AD
1N5402GHA0G
1N5402GHA0G
DIODE GEN PURP 200V 3A DO201AD
1N5404GHA0G
1N5404GHA0G
DIODE GEN PURP 400V 3A DO201AD
1N5407GHA0G
1N5407GHA0G
DIODE GEN PURP 800V 3A DO201AD
1N5400GHB0G
1N5400GHB0G
DIODE GEN PURP 50V 3A DO201AD
1N5402GHB0G
1N5402GHB0G
DIODE GEN PURP 200V 3A DO201AD
1N5404GHB0G
1N5404GHB0G
DIODE GEN PURP 400V 3A DO201AD

Similar Products

Part Number 1N5406GHB0G 1N5407GHB0G 1N5408GHB0G 1N5401GHB0G 1N5402GHB0G 1N5404GHB0G 1N5406G B0G 1N5406GHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V - 100 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR160AHB0G
MUR160AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43-L0 R0
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZV55B7V5 L1G
BZV55B7V5 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55C6V2 L1G
BZV55C6V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
BC817-25W RFG
BC817-25W RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT323