Taiwan Semiconductor Corporation 1N5406G A0G

Manufacturer No:: 1N5406G A0G
Manufacturer:: Taiwan Semiconductor Corporation
Package:: Cut Tape (CT)
Description:: DIODE GEN PURP 600V 3A DO201AD
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Product Introduction

Overview

The 1N5406G A0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for use in various power supply, inverter, converter, and freewheeling diode applications. It is part of the DO-201AD package series and is known for its reliability and robust specifications.

Key Specifications

Parameter	Value	Unit
Maximum Repetitive Peak Reverse Voltage (VRRM)	600	V
Maximum RMS Voltage (VRMS)	420	V
Maximum DC Blocking Voltage (VDC)	600	V
Maximum Average Forward Rectified Current (IF(AV))	3.0	A
Peak Forward Surge Current (IFSM)	200	A
Maximum Instantaneous Forward Voltage (VF)	1.2	V
Maximum DC Reverse Current (IR)	5.0 μA	μA
Operating Junction and Storage Temperature Range (TJ, TSTG)	-50 to +150	°C
Package	DO-201AD, Axial
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

Key Features

Low forward voltage drop (VF = 1.2 V at IF = 3 A)
Low leakage current (IR = 5.0 μA at VR = 600 V)
High forward surge capability (IFSM = 200 A)
Solder dip 275 °C max. for 10 s, per JESD 22-B106
RoHS-compliant and lead-free
Molded epoxy body with UL 94 V-0 flammability rating
Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The 1N5406G A0G is suitable for various applications including:

General purpose rectification in power supplies
Inverters and converters
Freewheeling diodes
Polarity protection in electronic circuits

Q & A

What is the maximum repetitive peak reverse voltage (VRRM) of the 1N5406G A0G?
600 V
What is the maximum average forward rectified current (IF(AV)) of the 1N5406G A0G?
3.0 A
What is the peak forward surge current (IFSM) of the 1N5406G A0G?
200 A
Is the 1N5406G A0G RoHS-compliant and lead-free?
What is the operating junction and storage temperature range of the 1N5406G A0G?
-50 to +150 °C
What type of package does the 1N5406G A0G come in?
DO-201AD, Axial
What is the maximum instantaneous forward voltage (VF) of the 1N5406G A0G?
1.2 V at IF = 3 A
What is the maximum DC reverse current (IR) of the 1N5406G A0G?
5.0 μA at VR = 600 V
Is the 1N5406G A0G suitable for high-temperature applications?
What are some typical applications of the 1N5406G A0G?
General purpose rectification, inverters, converters, and freewheeling diodes.

In Stock

UnitPrice: $0.28

Quantity: 3,316

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Same Series

Part Number	1N5406G A0G	1N5408G A0G	1N5407G A0G	1N5406GHA0G	1N5406G B0G	1N5401G A0G	1N5402G A0G	1N5404G A0G
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation
Product Status	Active	Active	Active	Active	Active	Active	Active	Active
Diode Type	Standard	Standard	Standard	Standard	Standard	Standard	Standard	Standard
Voltage - DC Reverse (Vr) (Max)	600 V	1000 V	800 V	600 V	600 V	100 V	200 V	400 V
Current - Average Rectified (Io)	3A	3A	3A	3A	3A	3A	3A	3A
Voltage - Forward (Vf) (Max) @ If	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	1.1 V @ 3 A	1 V @ 3 A	1 V @ 3 A
Speed	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-	-	-	-	-	-	-	-
Current - Reverse Leakage @ Vr	5 µA @ 600 V	5 µA @ 1000 V	5 µA @ 800 V	5 µA @ 600 V	5 µA @ 600 V	5 µA @ 100 V	5 µA @ 200 V	5 µA @ 400 V
Capacitance @ Vr, F	25pF @ 4V, 1MHz	25pF @ 4V, 1MHz	25pF @ 4V, 1MHz	25pF @ 4V, 1MHz	25pF @ 4V, 1MHz	25pF @ 4V, 1MHz	25pF @ 4V, 1MHz	25pF @ 4V, 1MHz
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial
Supplier Device Package	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C

Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	600 V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1 V @ 3 A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	-
Current - Reverse Leakage @ Vr:	5 µA @ 600 V
Capacitance @ Vr, F:	25pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-201AD, Axial
Supplier Device Package:	DO-201AD
Operating Temperature - Junction:	-55°C ~ 150°C

Taiwan Semiconductor Corporation 1N5406G A0G

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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