1N4148W-G RHG
  • Share:

Taiwan Semiconductor Corporation 1N4148W-G RHG

Manufacturer No:
1N4148W-G RHG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 150MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148W-G RHG is a high-speed switching diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for general-purpose switching applications and is known for its fast switching times and low forward voltage drop. It is packaged in the SOD-123F configuration, making it suitable for surface-mount technology (SMT) assembly. The device is RoHS compliant and features a green compound, indicating its environmentally friendly and lead-free status.

Key Specifications

ParameterSymbolValueUnit
Reverse VoltageVR75V
Repetitive Peak Reverse VoltageVRRM100V
Forward CurrentIF150mA
Repetitive Peak Forward CurrentIFRM300mA
Non-repetitive Peak Forward Surge Current (tp = 1 μs)IFSM2A
Junction Temperature RangeTJ-65 to +150°C
Storage Temperature RangeTSTG-65 to +150°C
Power Dissipation (on FR-4 board)Ptot280mW
Forward Voltage (IF = 10 mA, TJ = 25°C)VF0.62 to 1.00V
Reverse Leakage Current (VR = 75 V, TJ = 25°C)IR5µA
Junction Capacitance (f = 1 MHz, VR = 0 V)CJ4pF
Reverse Recovery Timetrr4ns

Key Features

  • High-Speed Switching: The 1N4148W-G RHG is optimized for fast switching applications with a reverse recovery time of 4 ns.
  • Low Forward Voltage Drop: It has a forward voltage drop of 0.62 to 1.00 V at 10 mA, making it efficient for various switching circuits.
  • High Reverse Voltage Rating: With a repetitive peak reverse voltage rating of 100 V, it is suitable for applications requiring high voltage handling.
  • Surface Mount Technology (SMT): Packaged in the SOD-123F configuration, it is ideal for SMT assembly and compact designs.
  • RoHS Compliant and Lead-Free: The device is environmentally friendly and compliant with RoHS regulations, ensuring it meets current environmental standards.

Applications

The 1N4148W-G RHG is versatile and can be used in a variety of applications, including:

  • General-Purpose Switching: Suitable for general-purpose switching circuits due to its fast switching times and low forward voltage drop.
  • Rectifier Circuits: Can be used in rectifier circuits where high-speed switching is required.
  • Signal Processing: Ideal for signal processing and conditioning circuits.
  • Automotive and Industrial Electronics: Due to its robust specifications, it can be used in automotive and industrial electronic systems.

Q & A

  1. What is the maximum reverse voltage rating of the 1N4148W-G RHG?
    The maximum reverse voltage rating is 75 V, with a repetitive peak reverse voltage of 100 V.
  2. What is the forward current rating of the 1N4148W-G RHG?
    The continuous forward current rating is 150 mA, with a repetitive peak forward current of 300 mA.
  3. What is the reverse recovery time of the 1N4148W-G RHG?
    The reverse recovery time is 4 ns.
  4. Is the 1N4148W-G RHG RoHS compliant?
    Yes, the device is RoHS compliant and lead-free.
  5. What is the junction temperature range of the 1N4148W-G RHG?
    The junction temperature range is -65°C to +150°C.
  6. What is the power dissipation of the 1N4148W-G RHG on an FR-4 board?
    The power dissipation is 280 mW on an FR-4 board.
  7. What is the typical forward voltage drop of the 1N4148W-G RHG?
    The typical forward voltage drop is between 0.62 to 1.00 V at 10 mA.
  8. What is the junction capacitance of the 1N4148W-G RHG?
    The junction capacitance is 4 pF at 1 MHz and 0 V reverse voltage.
  9. What package type is the 1N4148W-G RHG available in?
    The device is packaged in the SOD-123F configuration.
  10. Is the 1N4148W-G RHG suitable for surface-mount technology (SMT) assembly?
    Yes, it is suitable for SMT assembly due to its SOD-123F packaging.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:2.5 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
2,444

Please send RFQ , we will respond immediately.

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

LL4148 L0G
LL4148 L0G
Taiwan Semiconductor Corporation
DIODE GP 75V 150MA MINIMELF
MUR120SHR5G
MUR120SHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT42-L0 R0
BAT42-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
MUR420S R6G
MUR420S R6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZV55B20 L0G
BZV55B20 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZV55B15 L1G
BZV55B15 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZV55B2V4 L1G
BZV55B2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
1N4733G A0G
1N4733G A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W DO204AL
BC817-40 RFG
BC817-40 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23