BC817-40 RFG
  • Share:

Taiwan Semiconductor Corporation BC817-40 RFG

Manufacturer No:
BC817-40 RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40 RFG is a high-performance NPN bipolar junction transistor (BJT) manufactured by Taiwan Semiconductor Corporation. This transistor is designed for general-purpose applications and is known for its low power loss and high efficiency. It features a surface mount SOT-23 package, making it suitable for a wide range of electronic circuits.

The BC817-40 RFG is part of the BC817 series, which includes various models with different current gain characteristics. This specific model is characterized by its high DC current gain and robust electrical specifications, making it a reliable choice for various electronic designs.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Maximum DC Collector Current 500 mA
Maximum Collector Emitter Voltage 45 V
Maximum Collector Base Voltage 50 V
Maximum Emitter Base Voltage 5 V
Maximum Power Dissipation 300 mW
Minimum DC Current Gain (hFE) 250 -
Transition Frequency 100 MHz
Operating Temperature Range -55°C to +150°C -
Package Type SOT-23 -
Mounting Type Surface Mount -
Dimensions 3 x 1.4 x 1.2 mm -
RoHS Status ROHS3 Compliant -

Key Features

  • Low Power Loss and High Efficiency: The BC817-40 RFG is designed to minimize power loss, making it efficient for various applications.
  • High DC Current Gain: With a minimum DC current gain of 250, this transistor offers reliable amplification and switching performance.
  • Robust Electrical Specifications: It features a maximum collector-emitter voltage of 45V and a maximum collector current of 500mA, making it suitable for a wide range of applications.
  • Compact SOT-23 Package: The surface mount SOT-23 package is ideal for space-constrained designs and high-density PCBs.
  • Wide Operating Temperature Range: The transistor can operate from -55°C to +150°C, ensuring reliability in diverse environmental conditions.
  • ROHS3 Compliant: The BC817-40 RFG is compliant with the Restriction of Certain Hazardous Substances directive, making it environmentally friendly.

Applications

  • General Purpose Amplification: Suitable for general-purpose amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
  • Automotive Electronics: The wide operating temperature range makes it suitable for use in automotive electronics.
  • Consumer Electronics: Ideal for use in consumer electronics such as TVs, radios, and other household appliances.
  • Industrial Control Systems: Can be used in industrial control systems where reliability and efficiency are crucial.

Q & A

  1. What is the maximum collector-emitter voltage of the BC817-40 RFG?

    The maximum collector-emitter voltage is 45V.

  2. What is the minimum DC current gain (hFE) of the BC817-40 RFG?

    The minimum DC current gain is 250.

  3. What is the package type of the BC817-40 RFG?

    The package type is SOT-23.

  4. What is the operating temperature range of the BC817-40 RFG?

    The operating temperature range is -55°C to +150°C.

  5. Is the BC817-40 RFG ROHS compliant?

    Yes, the BC817-40 RFG is ROHS3 compliant.

  6. What is the maximum power dissipation of the BC817-40 RFG?

    The maximum power dissipation is 300 mW.

  7. What is the transition frequency of the BC817-40 RFG?

    The transition frequency is 100 MHz.

  8. What are the dimensions of the BC817-40 RFG?

    The dimensions are 3 x 1.4 x 1.2 mm.

  9. What is the maximum collector base voltage of the BC817-40 RFG?

    The maximum collector base voltage is 50 V.

  10. What is the maximum emitter base voltage of the BC817-40 RFG?

    The maximum emitter base voltage is 5 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.03
930

Please send RFQ , we will respond immediately.

Same Series
BC817-16 RFG
BC817-16 RFG
TRANS NPN 45V 0.5A SOT23
BC817-40 RFG
BC817-40 RFG
TRANS NPN 45V 0.5A SOT23

Similar Products

Part Number BC817-40 RFG BC817-40W RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 300 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23 SOT-323

Related Product By Categories

BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

1.5KE68AH
1.5KE68AH
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
1.5KE6.8AH
1.5KE6.8AH
Taiwan Semiconductor Corporation
TVS 1500W 6.8V 5% UNIDIR DO-201
BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
MUR1660CT
MUR1660CT
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZV55C2V4 L1G
BZV55C2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZX585B10 RKG
BZX585B10 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 200MW SOD523F
BZX585B13 RKG
BZX585B13 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23