1N5821H
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Taiwan Semiconductor Corporation 1N5821H

Manufacturer No:
1N5821H
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821H Schottky diode, produced by Taiwan Semiconductor Corporation, is a high-performance rectifier designed for various power management and signal processing applications. This diode is part of the 1N582x series, known for its low forward voltage drop, high efficiency, and excellent high-temperature stability. The 1N5821H is packaged in the DO-201AD case, making it suitable for a wide range of electronic systems requiring reliable and efficient rectification.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 30 V
Maximum RMS Voltage VRMS 21 V
Maximum DC Blocking Voltage VDC 30 V
Non-Repetitive Peak Reverse Voltage VRSM 36 V
Maximum Average Forward Rectified Current IF(AV) 3.0 A
Peak Forward Surge Current IFSM 80 A
Maximum Instantaneous Forward Voltage VF 0.500 V
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +125 °C
Typical Thermal Resistance RθJA 40 °C/W

Key Features

  • Low Forward Voltage Drop: The 1N5821H features a low forward voltage drop of 0.500 V, which minimizes power loss and enhances efficiency in power management applications.
  • High Efficiency: Designed for high efficiency, this diode is ideal for applications requiring minimal energy loss.
  • High Temperature Stability: The diode offers excellent stability over a wide temperature range, making it suitable for high-temperature environments.
  • High Forward Surge Capability: With a peak forward surge current of 80 A, the 1N5821H can handle transient conditions effectively.
  • AEC-Q101 Qualified and RoHS Compliant: This diode meets automotive and environmental standards, ensuring reliability and compliance in various applications.

Applications

  • Power Supplies: The 1N5821H is used in power supply circuits to provide efficient rectification and minimize power loss.
  • Automotive Systems: Its AEC-Q101 qualification makes it suitable for use in automotive electronics, such as battery charging and power management systems.
  • Industrial Power Management: This diode is used in industrial power management systems where high efficiency and reliability are critical.
  • Consumer Electronics: It is also used in consumer electronics for power rectification and voltage regulation.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5821H diode?

    The maximum repetitive peak reverse voltage is 30 V.

  2. What is the typical forward voltage drop of the 1N5821H diode?

    The typical forward voltage drop is 0.500 V.

  3. What is the maximum average forward rectified current of the 1N5821H diode?

    The maximum average forward rectified current is 3.0 A.

  4. What is the peak forward surge current capability of the 1N5821H diode?

    The peak forward surge current capability is 80 A.

  5. Is the 1N5821H diode AEC-Q101 qualified?

    Yes, the 1N5821H diode is AEC-Q101 qualified.

  6. What is the operating junction and storage temperature range of the 1N5821H diode?

    The operating junction and storage temperature range is -65 to +125 °C.

  7. What is the typical thermal resistance of the 1N5821H diode?

    The typical thermal resistance is 40 °C/W.

  8. In what package is the 1N5821H diode available?

    The 1N5821H diode is available in the DO-201AD package.

  9. Is the 1N5821H diode RoHS compliant?

    Yes, the 1N5821H diode is RoHS compliant.

  10. What are some common applications of the 1N5821H diode?

    Common applications include power supplies, automotive systems, industrial power management, and consumer electronics.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:200pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 125°C
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Similar Products

Part Number 1N5821H 1N5822H 1N5820H 1N5821 1N5821G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Fairchild Semiconductor onsemi
Product Status Active Active Active Active Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 20 V 30 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A 900 mV @ 9.4 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 40 V 500 µA @ 20 V 2 mA @ 30 V 2 mA @ 30 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz 200pF @ 4V, 1MHz - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201 Axial
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -50°C ~ 150°C -65°C ~ 125°C

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