1N5821G
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onsemi 1N5821G

Manufacturer No:
1N5821G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821G is a Schottky Barrier Rectifier produced by onsemi. This component is part of the 1N5820-1N5822 series, which employs state-of-the-art geometry featuring chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact. It is ideally suited for use in low-voltage, high-frequency applications such as rectifiers in inverters, freewheeling diodes, and polarity protection diodes. The 1N5821G is known for its extremely low forward voltage drop, low power loss, and high efficiency, making it a reliable choice for various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 30 V
Maximum RMS Reverse Voltage VRMS 21 V
Maximum DC Blocking Voltage VDC 30 V
Non-Repetitive Peak Reverse Voltage VRSM 36 V
Average Rectified Forward Current IF(AV) 3.0 A
Peak Forward Surge Current IFSM 80 A
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +125 °C
Maximum Instantaneous Forward Voltage (at IF = 3.0 A) VF 0.500 V
Thermal Resistance, Junction-to-Ambient RθJA 28 °C/W
Package DO-201AD

Key Features

  • Extremely low forward voltage drop (VF) of 0.500 V at 3.0 A, reducing power loss and increasing efficiency.
  • Low stored charge and majority carrier conduction, making it suitable for high-frequency applications.
  • High surge current capability with a peak forward surge current (IFSM) of 80 A.
  • Wide operating junction and storage temperature range from -65°C to +125°C.
  • Pb-free packages available, ensuring compliance with environmental regulations.
  • Corrosion-resistant finish and readily solderable terminal leads.

Applications

  • Low-voltage, high-frequency inverters.
  • Freewheeling diodes in DC/DC converters and motor control circuits.
  • Polarity protection diodes to prevent reverse voltage damage.
  • Rectifiers in power supplies and switching circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5821G?

    The maximum repetitive peak reverse voltage (VRRM) is 30 V.

  2. What is the average rectified forward current rating of the 1N5821G?

    The average rectified forward current (IF(AV)) is 3.0 A.

  3. What is the peak forward surge current capability of the 1N5821G?

    The peak forward surge current (IFSM) is 80 A.

  4. What is the operating junction temperature range of the 1N5821G?

    The operating junction temperature range is from -65°C to +125°C.

  5. What type of package does the 1N5821G come in?

    The 1N5821G comes in a DO-201AD package.

  6. What are some common applications of the 1N5821G?

    Common applications include low-voltage, high-frequency inverters, freewheeling diodes, polarity protection, and rectifiers in power supplies.

  7. Is the 1N5821G Pb-free?
  8. What is the thermal resistance, junction-to-ambient, of the 1N5821G?

    The thermal resistance, junction-to-ambient (RθJA), is 28 °C/W.

  9. What is the maximum instantaneous forward voltage of the 1N5821G at 3.0 A?

    The maximum instantaneous forward voltage (VF) at 3.0 A is 0.500 V.

  10. Can the 1N5821G be used in high-frequency circuits?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 mA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
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Similar Products

Part Number 1N5821G 1N5822G 1N5821H 1N5820G 1N5821
Manufacturer onsemi onsemi Taiwan Semiconductor Corporation onsemi Fairchild Semiconductor
Product Status Obsolete Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 30 V 20 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 525 mV @ 3 A 500 mV @ 3 A 475 mV @ 3 A 900 mV @ 9.4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 2 mA @ 30 V 2 mA @ 40 V 500 µA @ 30 V 2 mA @ 20 V 2 mA @ 30 V
Capacitance @ Vr, F - - 200pF @ 4V, 1MHz - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Axial DO-201AD Axial DO-201
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 125°C -50°C ~ 150°C

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