1N5822G
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onsemi 1N5822G

Manufacturer No:
1N5822G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 40V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5822G Schottky diode, produced by onsemi, is a high-performance discrete semiconductor component designed for various high-speed switching and power management applications. This diode is part of the 1N5822 series, known for its low forward voltage drop and high reverse voltage capability, making it ideal for use in low-voltage power systems, switching regulators, and other high-frequency applications.

Key Specifications

Parameter Value Unit
Maximum Average Rectified Forward Current (IF(AV)) 3 A
Repetitive Peak Reverse Voltage (VRRM) 40 V
Maximum Instantaneous Reverse Current (IR) 2 mA (25 °C), 20 mA (100 °C) mA
Maximum Instantaneous Forward Voltage (VF) 0.475 V to 0.525 V V
Peak Forward Surge Current (IFSM) 80 A A
Operating Junction and Storage Temperature Range (TJ, TSTG) -65 to +125 °C °C
Case Type Epoxy, Molded (DO-201AD)
Lead Temperature for Soldering 260 °C Max. for 10 Seconds °C

Key Features

  • Low Forward Voltage Drop: The 1N5822G has a typical forward voltage drop ranging from 0.475 V to 0.525 V, which is significantly lower than traditional silicon or germanium diodes, reducing power losses in high-frequency applications.
  • High Reverse Voltage Capability: With a repetitive peak reverse voltage of 40 V, this diode is suitable for applications requiring high voltage blocking.
  • High-Speed Switching: Designed for high-speed switching applications, the 1N5822G is ideal for use in switching regulators, PFC circuits, and other high-frequency systems.
  • Corrosion Resistant and Solderable Leads: The diode features corrosion-resistant external surfaces and readily solderable terminal leads, ensuring reliable connections and durability.
  • Pb-Free Packages Available: The 1N5822G is available in lead-free packages, making it compliant with environmental regulations and suitable for a wide range of applications.

Applications

  • Low-Voltage Power Systems: The 1N5822G is widely used in low-voltage power systems where low forward voltage drop and high reverse voltage capability are essential.
  • Switching Regulators and PFC Circuits: This diode is a popular choice for switching regulator circuits and power factor correction (PFC) circuits due to its high-speed switching capabilities.
  • Bridge Rectifiers and Freewheeling Diodes: It can be used in bridge rectifier configurations and as freewheeling diodes in various power conversion circuits.
  • DC/DC Converters and Polarity Protection: The 1N5822G is also suitable for use in DC/DC converters and polarity protection applications due to its high reliability and performance characteristics.

Q & A

  1. What is the maximum average rectified forward current of the 1N5822G?

    The maximum average rectified forward current is 3 A.

  2. What is the repetitive peak reverse voltage of the 1N5822G?

    The repetitive peak reverse voltage is 40 V.

  3. What is the typical forward voltage drop of the 1N5822G?

    The typical forward voltage drop ranges from 0.475 V to 0.525 V.

  4. What are the operating temperature ranges for the 1N5822G?

    The operating junction and storage temperature range is -65 to +125 °C.

  5. Is the 1N5822G available in lead-free packages?
  6. What are some common applications of the 1N5822G?
  7. What is the peak forward surge current of the 1N5822G?
  8. What is the case type of the 1N5822G?
  9. What is the lead temperature for soldering the 1N5822G?
  10. Is the 1N5822G suitable for high-speed switching applications?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:525 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 mA @ 40 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
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Similar Products

Part Number 1N5822G 1N5822H 1N5820G 1N5821G 1N5822
Manufacturer onsemi Taiwan Semiconductor Corporation onsemi onsemi STMicroelectronics
Product Status Active Active Active Obsolete Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 20 V 30 V 40 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 525 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A 500 mV @ 3 A 525 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 2 mA @ 40 V 500 µA @ 40 V 2 mA @ 20 V 2 mA @ 30 V 2 mA @ 40 V
Capacitance @ Vr, F - 200pF @ 4V, 1MHz - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AD, Axial
Supplier Device Package Axial DO-201AD Axial Axial DO-201AD
Operating Temperature - Junction -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C 150°C (Max)

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