1N5820G
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onsemi 1N5820G

Manufacturer No:
1N5820G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 20V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5820G is a Schottky Barrier Rectifier produced by onsemi, designed for high-efficiency and low-voltage applications. This diode is part of the 1N5820 series, which includes the 1N5820, 1N5821, and 1N5822, each with different voltage ratings. The 1N5820G is specifically rated for 20 volts and 3 amperes, making it suitable for a variety of rectification tasks in electronic circuits.

Key Specifications

ParameterValueUnit
Peak Repetitive Reverse Voltage (VRRM)20V
Working Peak Reverse Voltage (VRWM)20V
Non-Repetitive Peak Reverse Voltage (VRSM)24V
Average Rectified Forward Current (IO)3.0A
Maximum Instantaneous Forward Voltage (VF) at 1.0 A0.370V
Maximum Instantaneous Forward Voltage (VF) at 3.0 A0.380V
Maximum Instantaneous Reverse Current (iR) at 25°C2.0mA
Operating and Storage Junction Temperature Range-65 to +125°C
Thermal Resistance, Junction-to-Ambient (RJA)28°C/W
Lead Temperature for Soldering Purposes260°C (max for 10 seconds)

Key Features

  • Extremely low forward voltage drop (VF), contributing to low power loss and high efficiency.
  • Low stored charge and majority carrier conduction, making it ideal for high-frequency applications.
  • Schottky Barrier principle with chrome barrier metal, epitaxial construction, and oxide passivation for enhanced performance.
  • Corrosion-resistant epoxy case with readily solderable terminal leads.
  • Pb-free packages available, aligning with environmental regulations.
  • Available in various packaging options, including plastic bags and tape and reel.

Applications

The 1N5820G is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes. It is also applicable in various power supply circuits, switching power supplies, and other high-efficiency rectification needs.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N5820G?
    The peak repetitive reverse voltage (VRRM) of the 1N5820G is 20 volts.
  2. What is the average rectified forward current rating of the 1N5820G?
    The average rectified forward current (IO) rating is 3.0 amperes.
  3. What is the maximum instantaneous forward voltage at 3.0 amperes?
    The maximum instantaneous forward voltage (VF) at 3.0 amperes is approximately 0.380 volts.
  4. Is the 1N5820G Pb-free?
    Yes, Pb-free packages are available for the 1N5820G.
  5. What is the thermal resistance, junction-to-ambient (RJA), of the 1N5820G?
    The thermal resistance, junction-to-ambient (RJA), is 28°C/W.
  6. What are the typical applications of the 1N5820G?
    The 1N5820G is typically used in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
  7. How is the polarity of the 1N5820G indicated?
    The polarity of the 1N5820G is indicated by a polarity band on the cathode side.
  8. What is the operating and storage junction temperature range of the 1N5820G?
    The operating and storage junction temperature range is -65°C to +125°C.
  9. Can the 1N5820G be used in high-frequency applications?
    Yes, the 1N5820G is suitable for high-frequency applications due to its Schottky Barrier design and low stored charge.
  10. What are the packaging options available for the 1N5820G?
    The 1N5820G is available in plastic bags (500 units per bag) and tape and reel (1500 units per reel).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:475 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 mA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
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Similar Products

Part Number 1N5820G 1N5822G 1N5820H 1N5821G 1N5820
Manufacturer onsemi onsemi Taiwan Semiconductor Corporation onsemi NTE Electronics, Inc
Product Status Active Active Active Obsolete Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 40 V 20 V 30 V 20 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 475 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A 500 mV @ 3 A 475 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 2 mA @ 20 V 2 mA @ 40 V 500 µA @ 20 V 2 mA @ 30 V 500 µA @ 20 V
Capacitance @ Vr, F - - 200pF @ 4V, 1MHz - 190pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AD, Axial
Supplier Device Package Axial Axial DO-201AD Axial DO-201AD
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C

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