BAV21WS RRG
  • Share:

Taiwan Semiconductor Corporation BAV21WS RRG

Manufacturer No:
BAV21WS RRG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21WS RRG is a surface-mount, single-element, silicon rectifier diode produced by Taiwan Semiconductor Corporation. This diode is designed for general-purpose switching applications and is known for its high reliability and performance. It is packaged in the SOD-323F format, making it suitable for a wide range of electronic circuits.

Key Specifications

Parameter Symbol Unit Value
Repetitive Peak Reverse Voltage VRRM V 250
Average Forward Current IF mA 200
Non-repetitive Square Wave Peak Forward Current (t = 1s) IFSM A 0.5
Non-repetitive Square Wave Peak Forward Current (t = 1μs) IFSM A 2.5
Forward Voltage (IF = 100mA, TJ = 25°C) VF V 1.00
Forward Voltage (IF = 200mA, TJ = 25°C) VF V 1.25
Reverse Current (VR = 200V, TJ = 25°C) IR μA 0.1
Junction Capacitance (f = 1MHz, VR = 0V) CJ pF 5
Reverse Recovery Time trr ns 50
Power Dissipation PD mW 200
Junction Temperature Range TJ °C -65 to +150
Storage Temperature Range TSTG °C -65 to +150

Key Features

  • High Reverse Voltage: Up to 250V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: Maximum forward voltage of 1.25V at 200mA, ensuring efficient operation.
  • Fast Switching: Reverse recovery time of 50ns, ideal for high-speed switching applications.
  • Compact Package: SOD-323F surface-mount package for space-efficient designs.
  • Halogen-Free: The 'G' in the part number indicates that the device is made with halogen-free materials, complying with environmental standards.

Applications

  • General-Purpose Switching: Suitable for various switching circuits in electronic devices.
  • Rectifier Circuits: Can be used in rectifier circuits due to its high reverse voltage and low forward voltage drop.
  • High-Speed Circuits: Ideal for high-speed applications requiring fast switching times.
  • Automotive and Industrial Electronics: Can be used in automotive and industrial electronics where reliability and performance are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BAV21WS RRG diode?

    The maximum repetitive peak reverse voltage is 250V.

  2. What is the average forward current rating of the BAV21WS RRG diode?

    The average forward current rating is 200mA.

  3. What is the forward voltage drop at 200mA for the BAV21WS RRG diode?

    The forward voltage drop at 200mA is 1.25V.

  4. What is the reverse recovery time of the BAV21WS RRG diode?

    The reverse recovery time is 50ns.

  5. What is the junction temperature range for the BAV21WS RRG diode?

    The junction temperature range is -65°C to +150°C.

  6. Is the BAV21WS RRG diode halogen-free?
  7. What package type is the BAV21WS RRG diode available in?

    The diode is available in the SOD-323F surface-mount package.

  8. What are some typical applications for the BAV21WS RRG diode?

    Typical applications include general-purpose switching, rectifier circuits, high-speed circuits, and automotive and industrial electronics.

  9. What is the power dissipation rating for the BAV21WS RRG diode?

    The power dissipation rating is 200mW.

  10. What is the storage temperature range for the BAV21WS RRG diode?

    The storage temperature range is -65°C to +150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.06
16,344

Please send RFQ , we will respond immediately.

Same Series
BAV19WS RRG
BAV19WS RRG
DIODE GEN PURP 120V 200MA SOD323
BAV20WS RRG
BAV20WS RRG
DIODE GEN PURP 200V 200MA SOD323
BAV21WS RRG
BAV21WS RRG
DIODE GEN PURP 250V 200MA SOD323

Similar Products

Part Number BAV21WS RRG BAV20WS RRG BAV21WS R9G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 200 V 250 V
Current - Average Rectified (Io) 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 150 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-90, SOD-323F SC-90, SOD-323F SC-90, SOD-323F
Supplier Device Package SOD-323F SOD-323F SOD-323F
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD

Related Product By Brand

1.5KE6.8AHA0G
1.5KE6.8AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BZW06-15B A0G
BZW06-15B A0G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 32.5VC DO204AC
MUR1640CTH
MUR1640CTH
Taiwan Semiconductor Corporation
DIODE ARRAY GP 400V 16A TO220AB
1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAS85 L1G
BAS85 L1G
Taiwan Semiconductor Corporation
DIODE SCHTKY 30V 200MA MINI MELF
1N4004GHR1G
1N4004GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR160AHR1G
MUR160AHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR420HB0G
MUR420HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55C3V0 L1G
BZV55C3V0 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF