BAV21WS R9G
  • Share:

Taiwan Semiconductor Corporation BAV21WS R9G

Manufacturer No:
BAV21WS R9G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21WS R9G is a high-voltage, fast-switching diode produced by Taiwan Semiconductor Corporation. This surface-mount diode is designed for general-purpose switching applications and is known for its high reverse breakdown voltage and fast switching speed. The device is packaged in a SOD-323F format, making it suitable for automated insertion in various electronic assemblies. It is also fully RoHS compliant, halogen-free, and antimony-free, aligning with environmental and safety standards.

Key Specifications

Parameter Symbol Unit Value
Repetitive Peak Reverse Voltage VRRM V 250
Working Peak Reverse Voltage VRWM V 200
Forward Continuous Current IFM mA 200
Average Rectified Output Current IO mA 200
Non-Repetitive Peak Forward Surge Current (t = 1μs) IFSM A 2.5
Power Dissipation PD mW 200
Forward Voltage (IF = 100mA, TJ = 25°C) VF V 1.00
Forward Voltage (IF = 200mA, TJ = 25°C) VF V 1.25
Reverse Current (VR = 200V, TJ = 25°C) IR μA 0.1
Junction Capacitance (VR = 0V, f = 1MHz) CJ pF 5
Reverse Recovery Time tRR ns 50
Operating and Storage Temperature Range TJ, TSTG °C -55 to +150

Key Features

  • Fast Switching Speed: The BAV21WS R9G diode is characterized by its fast switching speed, making it suitable for high-frequency applications.
  • Surface Mount Package: The SOD-323F package is ideal for automated insertion and surface mount technology.
  • High Reverse Breakdown Voltage: With a repetitive peak reverse voltage of 250V, this diode offers high voltage handling capabilities.
  • RoHS Compliant and Halogen-Free: The device is fully RoHS compliant, halogen-free, and antimony-free, ensuring environmental safety and compliance.
  • Low Forward Voltage Drop: The diode has a low forward voltage drop, typically 1.00V at 100mA and 1.25V at 200mA.
  • Low Reverse Current: It features a low reverse current of 0.1μA at 200V, indicating minimal leakage.

Applications

  • General Purpose Switching: The BAV21WS R9G is designed for general-purpose switching applications in electronic circuits.
  • Automotive Applications: It can be used in automotive applications that require high reliability and compliance with automotive standards (though specific automotive-grade parts may be required for certain applications).
  • Consumer Electronics: Suitable for use in consumer electronics where high voltage handling and fast switching are necessary.
  • Industrial Control Systems: Can be used in industrial control systems that require reliable and fast-switching diodes.

Q & A

  1. What is the repetitive peak reverse voltage of the BAV21WS R9G diode?

    The repetitive peak reverse voltage is 250V.

  2. What is the forward continuous current rating of the BAV21WS R9G?

    The forward continuous current rating is 200mA.

  3. What is the power dissipation of the BAV21WS R9G diode?

    The power dissipation is 200mW.

  4. What is the typical forward voltage drop at 100mA and 200mA for the BAV21WS R9G?

    The typical forward voltage drop is 1.00V at 100mA and 1.25V at 200mA.

  5. What is the reverse recovery time of the BAV21WS R9G diode?

    The reverse recovery time is 50ns.

  6. Is the BAV21WS R9G diode RoHS compliant and halogen-free?

    Yes, the BAV21WS R9G is fully RoHS compliant, halogen-free, and antimony-free.

  7. What is the junction capacitance of the BAV21WS R9G at 1MHz?

    The junction capacitance is 5pF at 1MHz.

  8. What is the operating and storage temperature range for the BAV21WS R9G?

    The operating and storage temperature range is -55°C to +150°C.

  9. What package type is the BAV21WS R9G available in?

    The BAV21WS R9G is available in the SOD-323F package.

  10. Is the BAV21WS R9G suitable for automotive applications?

    While it can be used in some automotive applications, specific automotive-grade parts (e.g., those qualified to AEC-Q100) may be required for certain uses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
1,192

Please send RFQ , we will respond immediately.

Same Series
BAV21WS R9G
BAV21WS R9G
DIODE GEN PURP 250V 200MA SOD323
BAV19WS RRG
BAV19WS RRG
DIODE GEN PURP 120V 200MA SOD323
BAV20WS RRG
BAV20WS RRG
DIODE GEN PURP 200V 200MA SOD323

Similar Products

Part Number BAV21WS R9G BAV21WS RRG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-90, SOD-323F SC-90, SOD-323F
Supplier Device Package SOD-323F SOD-323F
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

BAS40 RFG
BAS40 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 200MA SOT23
MUR460
MUR460
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
BZX85C15 A0G
BZX85C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 1.3W DO204AL
BZV55C10 L0G
BZV55C10 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZV55C27 L0G
BZV55C27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55C6V8 L0G
BZV55C6V8 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZX84C24 RFG
BZX84C24 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 24V 300MW SOT23
BZX84C30 RFG
BZX84C30 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 30V 300MW SOT23
1N4733G A0G
1N4733G A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W DO204AL
BC848BW RFG
BC848BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT323
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323