BAV21WS R9G
  • Share:

Taiwan Semiconductor Corporation BAV21WS R9G

Manufacturer No:
BAV21WS R9G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21WS R9G is a high-voltage, fast-switching diode produced by Taiwan Semiconductor Corporation. This surface-mount diode is designed for general-purpose switching applications and is known for its high reverse breakdown voltage and fast switching speed. The device is packaged in a SOD-323F format, making it suitable for automated insertion in various electronic assemblies. It is also fully RoHS compliant, halogen-free, and antimony-free, aligning with environmental and safety standards.

Key Specifications

Parameter Symbol Unit Value
Repetitive Peak Reverse Voltage VRRM V 250
Working Peak Reverse Voltage VRWM V 200
Forward Continuous Current IFM mA 200
Average Rectified Output Current IO mA 200
Non-Repetitive Peak Forward Surge Current (t = 1μs) IFSM A 2.5
Power Dissipation PD mW 200
Forward Voltage (IF = 100mA, TJ = 25°C) VF V 1.00
Forward Voltage (IF = 200mA, TJ = 25°C) VF V 1.25
Reverse Current (VR = 200V, TJ = 25°C) IR μA 0.1
Junction Capacitance (VR = 0V, f = 1MHz) CJ pF 5
Reverse Recovery Time tRR ns 50
Operating and Storage Temperature Range TJ, TSTG °C -55 to +150

Key Features

  • Fast Switching Speed: The BAV21WS R9G diode is characterized by its fast switching speed, making it suitable for high-frequency applications.
  • Surface Mount Package: The SOD-323F package is ideal for automated insertion and surface mount technology.
  • High Reverse Breakdown Voltage: With a repetitive peak reverse voltage of 250V, this diode offers high voltage handling capabilities.
  • RoHS Compliant and Halogen-Free: The device is fully RoHS compliant, halogen-free, and antimony-free, ensuring environmental safety and compliance.
  • Low Forward Voltage Drop: The diode has a low forward voltage drop, typically 1.00V at 100mA and 1.25V at 200mA.
  • Low Reverse Current: It features a low reverse current of 0.1μA at 200V, indicating minimal leakage.

Applications

  • General Purpose Switching: The BAV21WS R9G is designed for general-purpose switching applications in electronic circuits.
  • Automotive Applications: It can be used in automotive applications that require high reliability and compliance with automotive standards (though specific automotive-grade parts may be required for certain applications).
  • Consumer Electronics: Suitable for use in consumer electronics where high voltage handling and fast switching are necessary.
  • Industrial Control Systems: Can be used in industrial control systems that require reliable and fast-switching diodes.

Q & A

  1. What is the repetitive peak reverse voltage of the BAV21WS R9G diode?

    The repetitive peak reverse voltage is 250V.

  2. What is the forward continuous current rating of the BAV21WS R9G?

    The forward continuous current rating is 200mA.

  3. What is the power dissipation of the BAV21WS R9G diode?

    The power dissipation is 200mW.

  4. What is the typical forward voltage drop at 100mA and 200mA for the BAV21WS R9G?

    The typical forward voltage drop is 1.00V at 100mA and 1.25V at 200mA.

  5. What is the reverse recovery time of the BAV21WS R9G diode?

    The reverse recovery time is 50ns.

  6. Is the BAV21WS R9G diode RoHS compliant and halogen-free?

    Yes, the BAV21WS R9G is fully RoHS compliant, halogen-free, and antimony-free.

  7. What is the junction capacitance of the BAV21WS R9G at 1MHz?

    The junction capacitance is 5pF at 1MHz.

  8. What is the operating and storage temperature range for the BAV21WS R9G?

    The operating and storage temperature range is -55°C to +150°C.

  9. What package type is the BAV21WS R9G available in?

    The BAV21WS R9G is available in the SOD-323F package.

  10. Is the BAV21WS R9G suitable for automotive applications?

    While it can be used in some automotive applications, specific automotive-grade parts (e.g., those qualified to AEC-Q100) may be required for certain uses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
1,192

Please send RFQ , we will respond immediately.

Same Series
BAV19WS RRG
BAV19WS RRG
DIODE GEN PURP 120V 200MA SOD323
BAV20WS RRG
BAV20WS RRG
DIODE GEN PURP 200V 200MA SOD323
BAV21WS RRG
BAV21WS RRG
DIODE GEN PURP 250V 200MA SOD323

Similar Products

Part Number BAV21WS R9G BAV21WS RRG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-90, SOD-323F SC-90, SOD-323F
Supplier Device Package SOD-323F SOD-323F
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

BZW06-15B A0G
BZW06-15B A0G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 32.5VC DO204AC
BAV99W RVG
BAV99W RVG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT323
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT42-L0 A0G
BAT42-L0 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43-L0 R0
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B16 L0G
BZV55B16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX585B4V7 RSG
BZX585B4V7 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 200MW SOD523F
BZX84C36 RFG
BZX84C36 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 36V 300MW SOT23
BZX79C3V6 A0G
BZX79C3V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW DO35
BC856A RFG
BC856A RFG
Taiwan Semiconductor Corporation
TRANS PNP 65V 0.1A SOT23