PMEG2010ER,115
  • Share:

Nexperia USA Inc. PMEG2010ER,115

Manufacturer No:
PMEG2010ER,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 20V 1A CFP3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG2010ER,115 is a high-performance, low forward voltage Schottky barrier rectifier produced by Nexperia USA Inc. This component is designed for applications requiring high efficiency and low power loss, making it suitable for use in power management and voltage regulation circuits. With a forward voltage as low as 0.37V at 1A, it ensures minimal voltage loss during operation, enhancing overall system efficiency.

Key Specifications

Attribute Value
Average Rectified Current (Max) 1 A
Peak Current (Max) 50 A
Reverse Voltage (Max) [Vrrm] 20 V
Reverse Current (Max) 1000 µA
Forward Voltage (Typ) @ 25°C 310 mV
Forward Voltage (Max) @ 25°C 340 mV
Package Style SOD123W
Mounting Method Surface Mount
Package Dimensions 2.6 x 1.7 x 1 mm
Automotive Qualified AEC-Q101

Key Features

  • Low forward voltage (Typ: 310 mV @ 1 A, Max: 340 mV @ 1 A)
  • High efficiency and low power loss
  • Surface mount package (SOD123W)
  • AEC-Q101 qualified for automotive applications
  • High peak current capability (50 A)
  • Low reverse current (Max: 1000 µA)

Applications

The PMEG2010ER,115 is suitable for various power electronic applications, including:

  • Power management circuits
  • Voltage regulation circuits
  • Battery charging applications
  • Automotive systems requiring high reliability and efficiency
  • General-purpose rectification in high-frequency switching applications

Q & A

  1. Q: What is the maximum forward current for the PMEG2010ER,115?

    A: The PMEG2010ER,115 has a maximum forward current rating of 1 A.

  2. Q: Is the PMEG2010ER,115 suitable for battery charging applications?

    A: Yes, it is suitable for diode-protected charging applications, ensuring minimal voltage loss during the charging process.

  3. Q: What is the reverse voltage rating of the PMEG2010ER,115?

    A: The reverse voltage rating is 20 V.

  4. Q: What is the typical forward voltage of the PMEG2010ER,115 at 1 A?

    A: The typical forward voltage is 310 mV at 1 A.

  5. Q: What package style does the PMEG2010ER,115 come in?

    A: It comes in the SOD123W package style.

  6. Q: Is the PMEG2010ER,115 automotive qualified?

    A: Yes, it is AEC-Q101 qualified for automotive applications.

  7. Q: What is the peak current capability of the PMEG2010ER,115?

    A: The peak current capability is 50 A.

  8. Q: What are the dimensions of the PMEG2010ER,115 package?

    A: The package dimensions are 2.6 x 1.7 x 1 mm.

  9. Q: What is the reverse current rating of the PMEG2010ER,115?

    A: The reverse current rating is 1000 µA.

  10. Q: Where can I find detailed technical specifications for the PMEG2010ER,115?

    A: Detailed technical specifications can be found in the PMEG2010ER,115 datasheet, available on request via the local Nexperia sales office or on various electronic component websites.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:340 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 mA @ 20 V
Capacitance @ Vr, F:175pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.45
1,323

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG2010ER,115 PMEG2010EV,115 PMEG3010ER,115 PMEG2010BER,115 PMEG2010EA,115 PMEG2010EH,115 PMEG2010EJ,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 30 V 20 V 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A (DC) 1A 1A 1A (DC) 1A (DC) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 340 mV @ 1 A 500 mV @ 1 A 360 mV @ 1 A 450 mV @ 1 A 550 mV @ 1 A 500 mV @ 1 A 500 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - -
Current - Reverse Leakage @ Vr 1 mA @ 20 V 50 µA @ 15 V 1.5 mA @ 30 V 50 µA @ 20 V 50 µA @ 15 V 200 µA @ 20 V 200 µA @ 20 V
Capacitance @ Vr, F 175pF @ 1V, 1MHz 25pF @ 5V, 1MHz 170pF @ 1V, 1MHz 185pF @ 1V, 1MHz 25pF @ 5V, 1MHz 80pF @ 1V, 1MHz 80pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOT-563, SOT-666 SOD-123W SOD-123W SC-76, SOD-323 SOD-123F SC-90, SOD-323F
Supplier Device Package SOD-123W SOT-666 SOD-123W SOD-123W SOD-323 SOD-123F SOD-323F
Operating Temperature - Junction 150°C (Max) 125°C (Max) 150°C (Max) 150°C (Max) 125°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PRTR5V0U2AX,215
PRTR5V0U2AX,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
BC847BS/ZLF
BC847BS/ZLF
Nexperia USA Inc.
GENERAL-PURPOSE TRANSISTOR
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
BC859CW/ZLF
BC859CW/ZLF
Nexperia USA Inc.
TRANS SOT323
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP
74HC595PW,118
74HC595PW,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16TSSOP
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR