BC807-25W RFG
  • Share:

Taiwan Semiconductor Corporation BC807-25W RFG

Manufacturer No:
BC807-25W RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25W RFG, produced by Taiwan Semiconductor Corporation, is a PNP general-purpose bipolar junction transistor (BJT) designed for a wide range of applications. This transistor is housed in a small SOT-323 (SC-70) surface-mount device (SMD) plastic package, making it suitable for compact and efficient electronic designs. The BC807-25W is part of a series that includes automotive-qualified devices, adhering to AEC-Q101 standards, and is also RoHS compliant, ensuring environmental sustainability.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Collector-Base Voltage VCBO -50 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -500 mA
DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE 160 - 400 -
Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -0.7 V
Base-Emitter On Voltage (IC = -500 mA, VCE = -1.0 V) VBE(on) -1.2 V
Current-Gain Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) fT 80 MHz
Junction Temperature TJ -55 to +150 °C
Package - SOT-323 (SC-70) -

Key Features

  • High Current Capability: The BC807-25W can handle a continuous collector current of up to 500 mA, making it suitable for applications requiring moderate to high current levels.
  • Compact Packaging: The SOT-323 (SC-70) package is very small, allowing for efficient use of space in modern electronic designs.
  • AEC-Q101 Qualified: This transistor is qualified for automotive and other applications requiring unique site and control change requirements, ensuring reliability in demanding environments.
  • RoHS Compliant: The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.
  • Wide Operating Temperature Range: The transistor can operate over a junction temperature range of -55°C to +150°C, making it versatile for various applications.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, the BC807-25W is suitable for use in automotive electronics, such as in power management, signal amplification, and control circuits.
  • Industrial Control Systems: The transistor can be used in industrial control systems for amplification and switching applications.
  • Consumer Electronics: It is applicable in various consumer electronic devices such as audio amplifiers, power supplies, and other general-purpose electronic circuits.
  • Power Management: The BC807-25W can be used in power management circuits due to its high current handling capability and low saturation voltage.

Q & A

  1. What is the maximum collector-emitter voltage of the BC807-25W?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the package type of the BC807-25W?

    The transistor is packaged in a SOT-323 (SC-70) surface-mount device (SMD) plastic package.

  3. Is the BC807-25W RoHS compliant?

    Yes, the BC807-25W is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  4. What is the maximum continuous collector current of the BC807-25W?

    The maximum continuous collector current (IC) is -500 mA.

  5. What is the typical current gain (hFE) of the BC807-25W?

    The typical DC current gain (hFE) ranges from 160 to 400 for IC = -100 mA and VCE = -1.0 V.

  6. What is the junction temperature range of the BC807-25W?

    The junction temperature range is -55°C to +150°C).

  7. Is the BC807-25W suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive and other demanding applications).

  8. What is the current-gain bandwidth product (fT) of the BC807-25W?

    The current-gain bandwidth product (fT) is 80 MHz for IC = -10 mA and VCE = -5.0 Vdc).

  9. What is the base-emitter on voltage (VBE(on)) of the BC807-25W?

    The base-emitter on voltage (VBE(on)) is approximately -1.2 V for IC = -500 mA and VCE = -1.0 V).

  10. Can the BC807-25W be used in high-frequency applications?

    Yes, with a current-gain bandwidth product (fT) of 80 MHz, it is suitable for high-frequency applications).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:200 mW
Frequency - Transition:80MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.05
1,169

Please send RFQ , we will respond immediately.

Same Series
BC807-16W RFG
BC807-16W RFG
TRANS PNP 45V 0.5A SOT323
BC807-25W RFG
BC807-25W RFG
TRANS PNP 45V 0.5A SOT323

Similar Products

Part Number BC807-25W RFG BC807-25 RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 200 mW 300 mW
Frequency - Transition 80MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-23

Related Product By Categories

BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC817K-40HR
BC817K-40HR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92

Related Product By Brand

SMBJ6V0A
SMBJ6V0A
Taiwan Semiconductor Corporation
TVS DIODE 6VWM 10.3VC DO214AA
MUR1640CTH
MUR1640CTH
Taiwan Semiconductor Corporation
DIODE ARRAY GP 400V 16A TO220AB
BAT54W RVG
BAT54W RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT-323
BAT42-L0 R0
BAT42-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43X RS
BAT43X RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C10 L0G
BZV55C10 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZV55C3V3 L0G
BZV55C3V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55C68 L0G
BZV55C68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZX585B6V2 RSG
BZX585B6V2 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 200MW SOD523F
BZX585B6V8 RSG
BZX585B6V8 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35