1N5406GHA0G
  • Share:

Taiwan Semiconductor Corporation 1N5406GHA0G

Manufacturer No:
1N5406GHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5406GHA0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N5400 series, known for its reliability and versatility in various electrical applications. It features a robust design with a maximum repetitive peak reverse voltage (VRRM) of 600 V and a maximum average forward rectified current (IF(AV)) of 3 A, making it suitable for a wide range of power supply, inverter, and converter applications.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM600V
Maximum RMS VoltageVRMS420V
Maximum DC Blocking VoltageVDC600V
Maximum Average Forward Rectified CurrentIF(AV)3.0A
Peak Forward Surge CurrentIFSM200A
Maximum Instantaneous Forward VoltageVF1.2V
Maximum DC Reverse CurrentIR5.0 μAμA
Operating Junction and Storage Temperature RangeTJ, TSTG-50 to +150°C
Package TypeDO-201AD

Key Features

  • Low Forward Voltage Drop: The 1N5406GHA0G has a maximum instantaneous forward voltage (VF) of 1.2 V, which minimizes power loss during operation.
  • Low Leakage Current: It features a low DC reverse current (IR) of 5.0 μA, reducing standby power consumption.
  • High Forward Surge Capability: The diode can handle a peak forward surge current (IFSM) of 200 A, making it robust against transient conditions.
  • Rugged Construction: The DO-201AD package is made from molded epoxy with a UL 94 V-0 flammability rating, ensuring durability and safety.
  • Solderable Leads: The terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102 standards.

Applications

The 1N5406GHA0G is commonly used in general-purpose rectification of power supplies, inverters, converters, and as freewheeling diodes. Its high voltage and current ratings make it suitable for a variety of electrical systems requiring reliable and efficient rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5406GHA0G? The maximum repetitive peak reverse voltage (VRRM) is 600 V.
  2. What is the maximum average forward rectified current of the 1N5406GHA0G? The maximum average forward rectified current (IF(AV)) is 3.0 A.
  3. What is the package type of the 1N5406GHA0G? The package type is DO-201AD.
  4. What is the maximum instantaneous forward voltage of the 1N5406GHA0G? The maximum instantaneous forward voltage (VF) is 1.2 V.
  5. Is the 1N5406GHA0G RoHS-compliant? Yes, the 1N5406GHA0G is RoHS-compliant.
  6. What is the operating junction and storage temperature range of the 1N5406GHA0G? The operating junction and storage temperature range is -50 to +150 °C.
  7. What is the peak forward surge current of the 1N5406GHA0G? The peak forward surge current (IFSM) is 200 A.
  8. What are the typical applications of the 1N5406GHA0G? It is used in general-purpose rectification of power supplies, inverters, converters, and as freewheeling diodes.
  9. Is the 1N5406GHA0G suitable for high-temperature applications? Yes, it can operate up to a junction temperature of 150 °C.
  10. What is the flammability rating of the 1N5406GHA0G's package? The package has a UL 94 V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:25pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
502

Please send RFQ , we will respond immediately.

Same Series
1N5407G A0G
1N5407G A0G
DIODE GEN PURP 800V 3A DO201AD
1N5400G A0G
1N5400G A0G
DIODE GEN PURP 50V 3A DO201AD
1N5401GHA0G
1N5401GHA0G
DIODE GEN PURP 100V 3A DO201AD
1N5402GHA0G
1N5402GHA0G
DIODE GEN PURP 200V 3A DO201AD
1N5404GHA0G
1N5404GHA0G
DIODE GEN PURP 400V 3A DO201AD
1N5407GHA0G
1N5407GHA0G
DIODE GEN PURP 800V 3A DO201AD
1N5408GHA0G
1N5408GHA0G
DIODE GEN PURP 3A DO201AD
1N5400GHB0G
1N5400GHB0G
DIODE GEN PURP 50V 3A DO201AD
1N5401G B0G
1N5401G B0G
DIODE GEN PURP 100V 3A DO201AD
1N5401GHB0G
1N5401GHB0G
DIODE GEN PURP 100V 3A DO201AD
1N5402GHB0G
1N5402GHB0G
DIODE GEN PURP 200V 3A DO201AD
1N5404GHB0G
1N5404GHB0G
DIODE GEN PURP 400V 3A DO201AD

Similar Products

Part Number 1N5406GHA0G 1N5407GHA0G 1N5408GHA0G 1N5406GHB0G 1N5401GHA0G 1N5402GHA0G 1N5404GHA0G 1N5406G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Discontinued at Digi-Key Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V - 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA

Related Product By Brand

1.5KE120AH
1.5KE120AH
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160SH
MUR160SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
1N4001GHR0G
1N4001GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT43-L0 R0
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZV55B22 L0G
BZV55B22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZX585B9V1 RSG
BZX585B9V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F
BZX84C2V4 RFG
BZX84C2V4 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 300MW SOT23
BZV55C5V1 L1G
BZV55C5V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZX79C5V6 A0G
BZX79C5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35