1N5406GHA0G
  • Share:

Taiwan Semiconductor Corporation 1N5406GHA0G

Manufacturer No:
1N5406GHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5406GHA0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N5400 series, known for its reliability and versatility in various electrical applications. It features a robust design with a maximum repetitive peak reverse voltage (VRRM) of 600 V and a maximum average forward rectified current (IF(AV)) of 3 A, making it suitable for a wide range of power supply, inverter, and converter applications.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM600V
Maximum RMS VoltageVRMS420V
Maximum DC Blocking VoltageVDC600V
Maximum Average Forward Rectified CurrentIF(AV)3.0A
Peak Forward Surge CurrentIFSM200A
Maximum Instantaneous Forward VoltageVF1.2V
Maximum DC Reverse CurrentIR5.0 μAμA
Operating Junction and Storage Temperature RangeTJ, TSTG-50 to +150°C
Package TypeDO-201AD

Key Features

  • Low Forward Voltage Drop: The 1N5406GHA0G has a maximum instantaneous forward voltage (VF) of 1.2 V, which minimizes power loss during operation.
  • Low Leakage Current: It features a low DC reverse current (IR) of 5.0 μA, reducing standby power consumption.
  • High Forward Surge Capability: The diode can handle a peak forward surge current (IFSM) of 200 A, making it robust against transient conditions.
  • Rugged Construction: The DO-201AD package is made from molded epoxy with a UL 94 V-0 flammability rating, ensuring durability and safety.
  • Solderable Leads: The terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102 standards.

Applications

The 1N5406GHA0G is commonly used in general-purpose rectification of power supplies, inverters, converters, and as freewheeling diodes. Its high voltage and current ratings make it suitable for a variety of electrical systems requiring reliable and efficient rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5406GHA0G? The maximum repetitive peak reverse voltage (VRRM) is 600 V.
  2. What is the maximum average forward rectified current of the 1N5406GHA0G? The maximum average forward rectified current (IF(AV)) is 3.0 A.
  3. What is the package type of the 1N5406GHA0G? The package type is DO-201AD.
  4. What is the maximum instantaneous forward voltage of the 1N5406GHA0G? The maximum instantaneous forward voltage (VF) is 1.2 V.
  5. Is the 1N5406GHA0G RoHS-compliant? Yes, the 1N5406GHA0G is RoHS-compliant.
  6. What is the operating junction and storage temperature range of the 1N5406GHA0G? The operating junction and storage temperature range is -50 to +150 °C.
  7. What is the peak forward surge current of the 1N5406GHA0G? The peak forward surge current (IFSM) is 200 A.
  8. What are the typical applications of the 1N5406GHA0G? It is used in general-purpose rectification of power supplies, inverters, converters, and as freewheeling diodes.
  9. Is the 1N5406GHA0G suitable for high-temperature applications? Yes, it can operate up to a junction temperature of 150 °C.
  10. What is the flammability rating of the 1N5406GHA0G's package? The package has a UL 94 V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:25pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
502

Please send RFQ , we will respond immediately.

Same Series
1N5407G A0G
1N5407G A0G
DIODE GEN PURP 800V 3A DO201AD
1N5400GHR0G
1N5400GHR0G
DIODE GEN PURP 50V 3A DO201AD
1N5401GHR0G
1N5401GHR0G
DIODE GEN PURP 100V 3A DO201AD
1N5400G A0G
1N5400G A0G
DIODE GEN PURP 50V 3A DO201AD
1N5400GHA0G
1N5400GHA0G
DIODE GEN PURP 50V 3A DO201AD
1N5402GHA0G
1N5402GHA0G
DIODE GEN PURP 200V 3A DO201AD
1N5404GHA0G
1N5404GHA0G
DIODE GEN PURP 400V 3A DO201AD
1N5407GHA0G
1N5407GHA0G
DIODE GEN PURP 800V 3A DO201AD
1N5408GHA0G
1N5408GHA0G
DIODE GEN PURP 3A DO201AD
1N5401GHB0G
1N5401GHB0G
DIODE GEN PURP 100V 3A DO201AD
1N5402GHB0G
1N5402GHB0G
DIODE GEN PURP 200V 3A DO201AD
1N5404GHB0G
1N5404GHB0G
DIODE GEN PURP 400V 3A DO201AD

Similar Products

Part Number 1N5406GHA0G 1N5407GHA0G 1N5408GHA0G 1N5406GHB0G 1N5401GHA0G 1N5402GHA0G 1N5404GHA0G 1N5406G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Discontinued at Digi-Key Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V - 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

1.5KE6.8AHA0G
1.5KE6.8AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
1.5KE68A A0G
1.5KE68A A0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
MBR10100H
MBR10100H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
BAS16 RFG
BAS16 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOT23
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BZV55C18 L0G
BZV55C18 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZV55C27 L0G
BZV55C27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55B15 L0G
BZV55B15 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZV55B5V6 L0G
BZV55B5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX84C11 RFG
BZX84C11 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 11V 300MW SOT23
BZV55C36 L1G
BZV55C36 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 36V 500MW MINI MELF