MUR420S V7G
  • Share:

Taiwan Semiconductor Corporation MUR420S V7G

Manufacturer No:
MUR420S V7G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR420S V7G is a high-performance, ultra-fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This surface mount device is part of the MUR420S – MUR460S series, offering a range of voltage ratings from 200V to 600V. The MUR420S V7G is specifically rated at 200V and 4A, making it suitable for various high-frequency and high-efficiency applications.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 200 V
Forward Current (IF) 4 A
Peak Forward Surge Current (IFSM) 75 A
Junction Temperature (TJ) -55 to +175 °C
Storage Temperature (TSTG) -55 to +175 °C
Forward Voltage (VF) at IF = 4A, TJ = 25°C 0.875 V
Reverse Recovery Time (trr) at IF = 0.5A, IR = 1.0A 25 ns
Junction-to-Ambient Thermal Resistance (RθJA) 45 °C/W
Junction-to-Case Thermal Resistance (RθJC) 8.5 °C/W
Package DO-214AB (SMC)

Key Features

  • Glass Passivated Chip Junction: Ensures high reliability and stability.
  • Ultra Fast Recovery Time: Optimized for high-efficiency applications with a recovery time of 25 ns.
  • Ideal for Automated Placement: Suitable for high-volume manufacturing processes.
  • Moisture Sensitivity Level 1: Compliant with J-STD-020, indicating low moisture sensitivity.
  • RoHS Compliant and Halogen-Free: Meets environmental standards and is free from halogens according to IEC 61249-2-21.
  • High Frequency Rectification: Designed for high-frequency applications such as switching mode converters and inverters.

Applications

  • High Frequency Rectification: Suitable for applications requiring fast switching and high efficiency.
  • Freewheeling Applications: Used in circuits where fast recovery is crucial.
  • Switching Mode Converters and Inverters: Ideal for use in computer and telecommunication equipment.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the MUR420S V7G?

    The VRRM of the MUR420S V7G is 200V.

  2. What is the maximum forward current (IF) rating of the MUR420S V7G?

    The maximum forward current rating is 4A.

  3. What is the peak forward surge current (IFSM) of the MUR420S V7G?

    The peak forward surge current is 75A.

  4. What is the junction temperature range of the MUR420S V7G?

    The junction temperature range is -55°C to +175°C.

  5. What is the typical forward voltage (VF) at 4A and 25°C for the MUR420S V7G?

    The typical forward voltage is 0.875V.

  6. What is the reverse recovery time (trr) of the MUR420S V7G?

    The reverse recovery time is 25 ns.

  7. Is the MUR420S V7G RoHS compliant and halogen-free?

    Yes, it is RoHS compliant and halogen-free according to IEC 61249-2-21.

  8. What is the package type of the MUR420S V7G?

    The package type is DO-214AB (SMC).

  9. What are some typical applications of the MUR420S V7G?

    Typical applications include high frequency rectification, freewheeling, and switching mode converters and inverters in computer and telecommunication equipment.

  10. Is the MUR420S V7G suitable for automated placement?

    Yes, it is ideal for automated placement.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.76
927

Please send RFQ , we will respond immediately.

Same Series
MUR440S V7G
MUR440S V7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S V7G
MUR460S V7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S R7G
MUR420S R7G
DIODE GEN PURP 200V 4A DO214AB
MUR440S R7G
MUR440S R7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S R7G
MUR460S R7G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHR7G
MUR460SHR7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S M6G
MUR420S M6G
DIODE GEN PURP 200V 4A DO214AB
MUR420SHM6G
MUR420SHM6G
DIODE GEN PURP 200V 4A DO214AB
MUR440SHM6G
MUR440SHM6G
DIODE GEN PURP 400V 4A DO214AB
MUR460S M6G
MUR460S M6G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
DIODE GEN PURP 600V 4A DO214AB
MUR440SHR7G
MUR440SHR7G
DIODE GEN PURP 400V 4A DO214AB

Similar Products

Part Number MUR420S V7G MUR440S V7G MUR460S V7G MUR320S V7G MUR420S R7G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 4A 3A 4A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 4 A 1.25 V @ 4 A 1.25 V @ 4 A 875 mV @ 3 A 875 mV @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 50 ns 50 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz - 65pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

BAT54BR-G REG
BAT54BR-G REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
MUR160S R5G
MUR160S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR160AHB0G
MUR160AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR420 B0G
MUR420 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
BZX84C3V9 RFG
BZX84C3V9 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 300MW SOT23
BZV55C36 L1G
BZV55C36 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 36V 500MW MINI MELF
BZX585B6V8 RKG
BZX585B6V8 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
MMBT3906L RFG
MMBT3906L RFG
Taiwan Semiconductor Corporation
TRANS PNP 40V 0.2A SOT23
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23