MUR420S V7G
  • Share:

Taiwan Semiconductor Corporation MUR420S V7G

Manufacturer No:
MUR420S V7G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR420S V7G is a high-performance, ultra-fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This surface mount device is part of the MUR420S – MUR460S series, offering a range of voltage ratings from 200V to 600V. The MUR420S V7G is specifically rated at 200V and 4A, making it suitable for various high-frequency and high-efficiency applications.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 200 V
Forward Current (IF) 4 A
Peak Forward Surge Current (IFSM) 75 A
Junction Temperature (TJ) -55 to +175 °C
Storage Temperature (TSTG) -55 to +175 °C
Forward Voltage (VF) at IF = 4A, TJ = 25°C 0.875 V
Reverse Recovery Time (trr) at IF = 0.5A, IR = 1.0A 25 ns
Junction-to-Ambient Thermal Resistance (RθJA) 45 °C/W
Junction-to-Case Thermal Resistance (RθJC) 8.5 °C/W
Package DO-214AB (SMC)

Key Features

  • Glass Passivated Chip Junction: Ensures high reliability and stability.
  • Ultra Fast Recovery Time: Optimized for high-efficiency applications with a recovery time of 25 ns.
  • Ideal for Automated Placement: Suitable for high-volume manufacturing processes.
  • Moisture Sensitivity Level 1: Compliant with J-STD-020, indicating low moisture sensitivity.
  • RoHS Compliant and Halogen-Free: Meets environmental standards and is free from halogens according to IEC 61249-2-21.
  • High Frequency Rectification: Designed for high-frequency applications such as switching mode converters and inverters.

Applications

  • High Frequency Rectification: Suitable for applications requiring fast switching and high efficiency.
  • Freewheeling Applications: Used in circuits where fast recovery is crucial.
  • Switching Mode Converters and Inverters: Ideal for use in computer and telecommunication equipment.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the MUR420S V7G?

    The VRRM of the MUR420S V7G is 200V.

  2. What is the maximum forward current (IF) rating of the MUR420S V7G?

    The maximum forward current rating is 4A.

  3. What is the peak forward surge current (IFSM) of the MUR420S V7G?

    The peak forward surge current is 75A.

  4. What is the junction temperature range of the MUR420S V7G?

    The junction temperature range is -55°C to +175°C.

  5. What is the typical forward voltage (VF) at 4A and 25°C for the MUR420S V7G?

    The typical forward voltage is 0.875V.

  6. What is the reverse recovery time (trr) of the MUR420S V7G?

    The reverse recovery time is 25 ns.

  7. Is the MUR420S V7G RoHS compliant and halogen-free?

    Yes, it is RoHS compliant and halogen-free according to IEC 61249-2-21.

  8. What is the package type of the MUR420S V7G?

    The package type is DO-214AB (SMC).

  9. What are some typical applications of the MUR420S V7G?

    Typical applications include high frequency rectification, freewheeling, and switching mode converters and inverters in computer and telecommunication equipment.

  10. Is the MUR420S V7G suitable for automated placement?

    Yes, it is ideal for automated placement.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.76
927

Please send RFQ , we will respond immediately.

Same Series
MUR460S V7G
MUR460S V7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S R7G
MUR420S R7G
DIODE GEN PURP 200V 4A DO214AB
MUR440S R7G
MUR440S R7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S R7G
MUR460S R7G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHR7G
MUR460SHR7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S M6G
MUR420S M6G
DIODE GEN PURP 200V 4A DO214AB
MUR420SHM6G
MUR420SHM6G
DIODE GEN PURP 200V 4A DO214AB
MUR440S M6G
MUR440S M6G
DIODE GEN PURP 400V 4A DO214AB
MUR440SHM6G
MUR440SHM6G
DIODE GEN PURP 400V 4A DO214AB
MUR460S M6G
MUR460S M6G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
DIODE GEN PURP 600V 4A DO214AB
MUR440SHR7G
MUR440SHR7G
DIODE GEN PURP 400V 4A DO214AB

Similar Products

Part Number MUR420S V7G MUR440S V7G MUR460S V7G MUR320S V7G MUR420S R7G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 4A 3A 4A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 4 A 1.25 V @ 4 A 1.25 V @ 4 A 875 mV @ 3 A 875 mV @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 50 ns 50 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz - 65pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

MUR420 A0G
MUR420 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR840 C0G
MUR840 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZV55B3V0 L1G
BZV55B3V0 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55B47 L1G
BZV55B47 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55C20 L1G
BZV55C20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZX55C13 A0G
BZX55C13 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW DO35
BC847A RFG
BC847A RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23