MUR460S M6G
  • Share:

Taiwan Semiconductor Corporation MUR460S M6G

Manufacturer No:
MUR460S M6G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460S M6G, produced by Taiwan Semiconductor Corporation, is a highly versatile and reliable fast recovery rectifier. This component is designed to meet the demands of various electronic projects with its high-performance capabilities. It features a surface mount design in the DO-214AB (SMC) package, making it suitable for a wide range of applications. The MUR460S M6G is AEC-Q101 qualified, ensuring its reliability in automotive and other high-reliability environments. Additionally, it uses a green compound, which is halogen-free and meets UL 94V-0 flammability rating.

Key Specifications

Parameter Value Unit
Mounting Style SMD/SMT
Vr - Reverse Voltage 600 V
If - Forward Current 4 A
Max Surge Current 75 A
Recovery Time 50 ns
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Vf - Forward Voltage 1.25 V @ 4 A
Ir - Reverse Current 10 µA @ 600 V
Package/Case DO-214AB (SMC)

Key Features

  • Fast Recovery Time: The MUR460S M6G has a fast recovery time of 50 ns, making it suitable for high-speed switching applications.
  • High Forward Current: It can handle a forward current of up to 4 A, making it robust for various power rectification needs.
  • High Reverse Voltage: With a reverse voltage rating of 600 V, this rectifier is capable of handling high voltage applications.
  • AEC-Q101 Qualified: This component is qualified to AEC-Q101 standards, ensuring its reliability in automotive and other high-reliability environments.
  • Green Compound: The component uses a halogen-free green compound, meeting UL 94V-0 flammability rating.
  • Surface Mount Design: The DO-214AB (SMC) package allows for easy surface mounting, enhancing the component's versatility.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification, the MUR460S M6G is ideal for use in automotive systems where reliability is crucial.
  • Power Supplies: Its high forward current and fast recovery time make it suitable for use in power supply units and DC-DC converters.
  • High-Speed Switching: The fast recovery time of 50 ns makes it appropriate for high-speed switching applications in various electronic circuits.
  • Industrial Electronics: The component's robust design and high voltage handling capabilities make it a good fit for industrial electronic devices.

Q & A

  1. What is the reverse voltage rating of the MUR460S M6G?

    The reverse voltage rating of the MUR460S M6G is 600 V.

  2. What is the forward current capacity of the MUR460S M6G?

    The forward current capacity of the MUR460S M6G is up to 4 A.

  3. What is the recovery time of the MUR460S M6G?

    The recovery time of the MUR460S M6G is 50 ns.

  4. Is the MUR460S M6G AEC-Q101 qualified?

    Yes, the MUR460S M6G is AEC-Q101 qualified.

  5. What type of compound is used in the MUR460S M6G?

    The MUR460S M6G uses a halogen-free green compound.

  6. What is the operating temperature range of the MUR460S M6G?

    The operating temperature range of the MUR460S M6G is from -55°C to +175°C.

  7. What is the maximum surge current of the MUR460S M6G?

    The maximum surge current of the MUR460S M6G is 75 A.

  8. What is the forward voltage drop of the MUR460S M6G at 4 A?

    The forward voltage drop of the MUR460S M6G at 4 A is 1.25 V.

  9. What is the package type of the MUR460S M6G?

    The package type of the MUR460S M6G is DO-214AB (SMC).

  10. What are some common applications of the MUR460S M6G?

    The MUR460S M6G is commonly used in automotive systems, power supplies, high-speed switching applications, and industrial electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
196

Please send RFQ , we will respond immediately.

Same Series
MUR440S V7G
MUR440S V7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S V7G
MUR460S V7G
DIODE GEN PURP 600V 4A DO214AB
MUR440S R7G
MUR440S R7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S R7G
MUR460S R7G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHR7G
MUR460SHR7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S M6G
MUR420S M6G
DIODE GEN PURP 200V 4A DO214AB
MUR420SHM6G
MUR420SHM6G
DIODE GEN PURP 200V 4A DO214AB
MUR440S M6G
MUR440S M6G
DIODE GEN PURP 400V 4A DO214AB
MUR440SHM6G
MUR440SHM6G
DIODE GEN PURP 400V 4A DO214AB
MUR460S M6G
MUR460S M6G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
DIODE GEN PURP 600V 4A DO214AB
MUR440SHR7G
MUR440SHR7G
DIODE GEN PURP 400V 4A DO214AB

Similar Products

Part Number MUR460S M6G MUR460SHM6G MUR360S M6G MUR420S M6G MUR440S M6G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 200 V 400 V
Current - Average Rectified (Io) 4A 4A 3A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 3 A 1.25 V @ 4 A 1.25 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 25 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz - 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

1.5KE68A R0G
1.5KE68A R0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
1.5KE68A A0G
1.5KE68A A0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
MUR420 A0G
MUR420 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
MUR160S
MUR160S
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
1N5406GHA0G
1N5406GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
BZV55C22 L0G
BZV55C22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55B16 L1G
BZV55B16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C10 L1G
BZV55C10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZX79C3V9 A0G
BZX79C3V9 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW DO35
BZX79C6V8 A0G
BZX79C6V8 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW DO35