MUR420S M6G
  • Share:

Taiwan Semiconductor Corporation MUR420S M6G

Manufacturer No:
MUR420S M6G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR420S M6G is a high-performance, ultra-fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This surface-mount diode is designed for high-efficiency applications and is part of the MUR420S to MUR460S series, offering a range of voltage ratings. The MUR420S M6G specifically features a 200V DC reverse voltage and a 4A average rectified current, making it suitable for various high-frequency and switching applications.

Key Specifications

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 4 A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 4 A V
Reverse Recovery Time (trr) 25 ns ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V µA
Capacitance @ Vr, F 65 pF @ 4V, 1MHz pF
Operating Temperature - Junction -55°C ~ 175°C °C
Package/Case DO-214AB (SMC) -
Mounting Type Surface Mount -

Key Features

  • Glass passivated chip junction: Ensures high reliability and stability.
  • Ultra Fast recovery time: Less than 500ns, making it ideal for high-efficiency applications.
  • Ideal for automated placement: Suitable for high-volume manufacturing processes.
  • Moisture sensitivity level 1, per J-STD-020: Minimizes the risk of moisture-related failures.
  • RoHS Compliant and Halogen-free: Meets environmental and safety standards.
  • Matte tin plated leads, solderable per J-STD-002: Easy to solder and integrate into circuits.

Applications

  • High frequency rectification: Suitable for applications requiring fast switching and high-frequency operation.
  • Freewheeling applications: Often used in circuits where a diode is needed to protect against back EMF.
  • Switching mode converters and inverters: Used in power supplies, DC-DC converters, and other switching circuits in computer and telecommunication systems.

Q & A

  1. Q: What is the MUR420S M6G diode used for?

    A: The MUR420S M6G is used for high-frequency rectification, freewheeling applications, and switching mode converters and inverters.

  2. Q: What is the maximum reverse voltage rating of the MUR420S M6G?

    A: The maximum reverse voltage rating is 200V.

  3. Q: What is the average rectified current of the MUR420S M6G?

    A: The average rectified current is 4A.

  4. Q: What is the reverse recovery time of the MUR420S M6G?

    A: The reverse recovery time is less than 25 ns.

  5. Q: Is the MUR420S M6G RoHS compliant?

    A: Yes, the MUR420S M6G is RoHS compliant and halogen-free.

  6. Q: What is the operating temperature range of the MUR420S M6G?

    A: The operating temperature range is -55°C to 175°C.

  7. Q: What package type does the MUR420S M6G come in?

    A: The MUR420S M6G comes in a DO-214AB (SMC) package.

  8. Q: How can I obtain the datasheet for the MUR420S M6G?

    A: You can obtain the datasheet from the Taiwan Semiconductor Corporation website or through authorized distributors like Ovaga Technologies.

  9. Q: What are the payment methods accepted for purchasing the MUR420S M6G?

    A: Payment methods include Wire Transfer, PayPal, Credit Cards, Western Union, and Money Gram.

  10. Q: What is the warranty period for the MUR420S M6G?

    A: The warranty period is 1 year, covering defects in materials and workmanship under normal use.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
435

Please send RFQ , we will respond immediately.

Same Series
MUR420S V7G
MUR420S V7G
DIODE GEN PURP 200V 4A DO214AB
MUR440S V7G
MUR440S V7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S V7G
MUR460S V7G
DIODE GEN PURP 600V 4A DO214AB
MUR440S R7G
MUR440S R7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S R7G
MUR460S R7G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHR7G
MUR460SHR7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S M6G
MUR420S M6G
DIODE GEN PURP 200V 4A DO214AB
MUR420SHM6G
MUR420SHM6G
DIODE GEN PURP 200V 4A DO214AB
MUR440S M6G
MUR440S M6G
DIODE GEN PURP 400V 4A DO214AB
MUR440SHM6G
MUR440SHM6G
DIODE GEN PURP 400V 4A DO214AB
MUR460S M6G
MUR460S M6G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
DIODE GEN PURP 600V 4A DO214AB

Similar Products

Part Number MUR420S M6G MUR420SHM6G MUR440S M6G MUR460S M6G MUR320S M6G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 400 V 600 V 200 V
Current - Average Rectified (Io) 4A 4A 4A 4A 3A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 4 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 50 ns 50 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

BAV99L
BAV99L
Taiwan Semiconductor Corporation
SOT-23, 70V, 0.2A, SWITCHING DIO
BAT54 RFG
BAT54 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
MUR160S R5G
MUR160S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
MUR460SHR7G
MUR460SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4002GHA0G
1N4002GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR840 C0G
MUR840 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
BAS85-L0 L0G
BAS85-L0 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
BZV55C3V3 L0G
BZV55C3V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B15 L0G
BZV55B15 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZV55C2V7 L1G
BZV55C2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF