BSS123W
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Taiwan Semiconductor Corporation BSS123W

Manufacturer No:
BSS123W
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
100V, 0.16A, SINGLE N-CHANNEL PO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123W, produced by Taiwan Semiconductor Corporation, is a single N-Channel Power MOSFET designed for a variety of electronic applications. This component is known for its high performance and reliability, making it a popular choice in the industry. The BSS123W is packaged in a SOT323 case, which is a small outline transistor package, suitable for surface mount technology (SMT) assembly.

Key Specifications

ParameterValue
Type of transistorN-MOSFET
PolarisationUnipolar
Drain-source voltage100V
Drain current0.16A
Power dissipation0.2W
CaseSOT323
Gate-source voltage±20V
On-state resistance
MountingSMD
Kind of packageReel, tape
Kind of channelEnhanced

Key Features

  • High drain-source voltage rating of 100V, making it suitable for high-voltage applications.
  • Low on-state resistance of 6Ω, which minimizes power losses.
  • Compact SOT323 package, ideal for space-constrained designs.
  • Enhanced channel type for improved performance.
  • Surface mount technology (SMT) compatible for easy assembly.

Applications

The BSS123W is versatile and can be used in a variety of applications, including but not limited to:

  • Power switching and amplification in electronic devices.
  • Motor control and drive circuits.
  • Audio amplifiers and other high-frequency applications.
  • Automotive and industrial control systems.

Q & A

  1. What is the drain-source voltage rating of the BSS123W?
    The drain-source voltage rating of the BSS123W is 100V.
  2. What is the maximum drain current of the BSS123W?
    The maximum drain current of the BSS123W is 0.16A.
  3. What type of package does the BSS123W use?
    The BSS123W is packaged in a SOT323 case.
  4. Is the BSS123W suitable for surface mount technology (SMT)?
    Yes, the BSS123W is SMT compatible.
  5. What is the on-state resistance of the BSS123W?
    The on-state resistance of the BSS123W is 6Ω.
  6. What are some common applications of the BSS123W?
    The BSS123W is commonly used in power switching, motor control, audio amplifiers, and automotive/industrial control systems.
  7. What is the power dissipation of the BSS123W?
    The power dissipation of the BSS123W is 0.2W.
  8. What is the gate-source voltage rating of the BSS123W?
    The gate-source voltage rating of the BSS123W is ±20V.
  9. Is the BSS123W an enhanced channel type MOSFET?
    Yes, the BSS123W is an enhanced channel type MOSFET.
  10. Where can I purchase the BSS123W?
    The BSS123W can be purchased from distributors such as Digi-Key, Mouser Electronics, and other authorized suppliers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):298mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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In Stock

$0.46
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Similar Products

Part Number BSS123W BSS123 BSS123L
Manufacturer Taiwan Semiconductor Corporation onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 160mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 160mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V 2.5 nC @ 10 V 2.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 50 V 73 pF @ 25 V 21.5 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 298mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 SOT-23-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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