Overview
The BSS123 is an N-Channel logic level enhancement mode field effect transistor produced by onsemi using their proprietary high cell density DMOS technology. This transistor is designed to minimize on-state resistance, providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDSS) | 100 | V |
Gate-Source Voltage (VGSS) | ±20 | V |
Continuous Drain Current (ID) | 0.17 | A |
Pulsed Drain Current (ID) | 0.68 | A |
Maximum Power Dissipation (PD) | 0.36 | W |
On-State Resistance (RDS(on)) at VGS = 10 V | 6 Ω | Ω |
On-State Resistance (RDS(on)) at VGS = 4.5 V | 10 Ω | Ω |
Input Capacitance (Ciss) | 73 pF | pF |
Output Capacitance (Coss) | 7 pF | pF |
Reverse Transfer Capacitance (Crss) | 3.4 pF | pF |
Turn-On Delay Time (td(on)) | 1.7 - 3.4 ns | ns |
Turn-On Rise Time (tr) | 9 - 18 ns | ns |
Turn-Off Delay Time (td(off)) | 17 - 31 ns | ns |
Turn-Off Fall Time (tf) | 2.4 - 5 ns | ns |
Total Gate Charge (Qg) | 1.8 - 2.5 nC | nC |
Key Features
- High Density Cell Design for Extremely Low RDS(on)
- Rugged and Reliable
- Compact Industry Standard SOT-23 Surface Mount Package
- Pb-Free and Halogen Free
- Fast Switching Performance
Applications
- Small Servo Motor Control
- Power MOSFET Gate Drivers
- Other Switching Applications
Q & A
- What is the maximum drain-source voltage (VDSS) of the BSS123?
The maximum drain-source voltage (VDSS) is 100 V.
- What is the continuous drain current (ID) rating of the BSS123?
The continuous drain current (ID) rating is 0.17 A.
- What is the on-state resistance (RDS(on)) at VGS = 10 V?
The on-state resistance (RDS(on)) at VGS = 10 V is 6 Ω.
- What is the package type of the BSS123?
The package type is SOT-23 (TO-236).
- Is the BSS123 Pb-Free and Halogen Free?
- What are some typical applications of the BSS123?
Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.
- What is the maximum power dissipation (PD) of the BSS123?
The maximum power dissipation (PD) is 0.36 W.
- What is the turn-on delay time (td(on)) of the BSS123?
The turn-on delay time (td(on)) is between 1.7 and 3.4 ns.
- What is the total gate charge (Qg) of the BSS123?
The total gate charge (Qg) is between 1.8 and 2.5 nC.
- Is the BSS123 suitable for high voltage applications?
No, the BSS123 is particularly suited for low voltage, low current applications.