BSS123
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onsemi BSS123

Manufacturer No:
BSS123
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123 is an N-Channel logic level enhancement mode field effect transistor produced by onsemi using their proprietary high cell density DMOS technology. This transistor is designed to minimize on-state resistance, providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 100 V
Gate-Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 0.17 A
Pulsed Drain Current (ID) 0.68 A
Maximum Power Dissipation (PD) 0.36 W
On-State Resistance (RDS(on)) at VGS = 10 V 6 Ω Ω
On-State Resistance (RDS(on)) at VGS = 4.5 V 10 Ω Ω
Input Capacitance (Ciss) 73 pF pF
Output Capacitance (Coss) 7 pF pF
Reverse Transfer Capacitance (Crss) 3.4 pF pF
Turn-On Delay Time (td(on)) 1.7 - 3.4 ns ns
Turn-On Rise Time (tr) 9 - 18 ns ns
Turn-Off Delay Time (td(off)) 17 - 31 ns ns
Turn-Off Fall Time (tf) 2.4 - 5 ns ns
Total Gate Charge (Qg) 1.8 - 2.5 nC nC

Key Features

  • High Density Cell Design for Extremely Low RDS(on)
  • Rugged and Reliable
  • Compact Industry Standard SOT-23 Surface Mount Package
  • Pb-Free and Halogen Free
  • Fast Switching Performance

Applications

  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Other Switching Applications

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the BSS123?

    The maximum drain-source voltage (VDSS) is 100 V.

  2. What is the continuous drain current (ID) rating of the BSS123?

    The continuous drain current (ID) rating is 0.17 A.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V?

    The on-state resistance (RDS(on)) at VGS = 10 V is 6 Ω.

  4. What is the package type of the BSS123?

    The package type is SOT-23 (TO-236).

  5. Is the BSS123 Pb-Free and Halogen Free?
  6. What are some typical applications of the BSS123?

    Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.

  7. What is the maximum power dissipation (PD) of the BSS123?

    The maximum power dissipation (PD) is 0.36 W.

  8. What is the turn-on delay time (td(on)) of the BSS123?

    The turn-on delay time (td(on)) is between 1.7 and 3.4 ns.

  9. What is the total gate charge (Qg) of the BSS123?

    The total gate charge (Qg) is between 1.8 and 2.5 nC.

  10. Is the BSS123 suitable for high voltage applications?

    No, the BSS123 is particularly suited for low voltage, low current applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:73 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.36
2,579

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Same Series
BSS100
BSS100
MOSFET N-CH 100V 220MA TO92-3
BSS123_D87Z
BSS123_D87Z
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123 BSS123W BSS123L BSS127
Manufacturer onsemi Taiwan Semiconductor Corporation onsemi Rectron USA
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 600 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 160mA (Ta) 170mA (Ta) 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 5Ohm @ 160mA, 10V 6Ohm @ 170mA, 10V 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.5V @ 250µA 2V @ 1mA 2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 10 V 2 nC @ 10 V 2.5 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 73 pF @ 25 V 30 pF @ 50 V 21.5 pF @ 25 V 28 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 360mW (Ta) 298mW (Ta) 360mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3 SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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