BSS123_D87Z
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onsemi BSS123_D87Z

Manufacturer No:
BSS123_D87Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS123 is an N-Channel enhancement mode field effect transistor (MOSFET) produced by onsemi. This device is manufactured using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications.

Key Specifications

Parameter Symbol Unit Min Typ Max
Drain-Source Voltage VDSS V - - 100
Gate-Source Voltage VGSS V - - ±20
Drain Current - Continuous ID A - - 0.17
Drain Current - Pulsed ID A - - 0.68
Maximum Power Dissipation PD W - - 0.36
On-Resistance RDS(ON) Ω - 3.5 @ VGS = 10V 6 @ VGS = 10V
On-Resistance RDS(ON) Ω - 3.8 @ VGS = 4.5V 10 @ VGS = 4.5V
Gate Threshold Voltage VGS(TH) V 0.8 1.4 2.0
Input Capacitance Ciss pF - 22 60
Output Capacitance Coss pF - 3.5 15
Reverse Transfer Capacitance Crss pF - 2.0 6

Key Features

  • Advanced MOSFET process technology for high efficiency.
  • Low on-resistance with low gate charge.
  • Fast switching and reverse body recovery.
  • High density cell design for extremely low RDS(ON).
  • Rugged and reliable performance.
  • Compact industry standard SOT-23 surface mount package.
  • Pb-free and halogen-free.
  • Low gate threshold voltage.
  • Low input capacitance.
  • Fast switching speed.
  • Low input/output leakage.

Applications

  • Small servo motor control.
  • Power MOSFET gate drivers.
  • High efficiency switched mode power supplies.
  • Other switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BSS123 MOSFET?

    The maximum drain-source voltage (VDSS) is 100 V.

  2. What is the continuous drain current rating of the BSS123?

    The continuous drain current (ID) is 0.17 A.

  3. What is the typical on-resistance of the BSS123 at VGS = 10 V?

    The typical on-resistance (RDS(ON)) at VGS = 10 V is 3.5 Ω.

  4. What is the gate threshold voltage range of the BSS123?

    The gate threshold voltage (VGS(TH)) range is from 0.8 V to 2.0 V.

  5. What is the maximum power dissipation of the BSS123?

    The maximum power dissipation (PD) is 0.36 W.

  6. What package type is the BSS123 available in?

    The BSS123 is available in a compact industry standard SOT-23 surface mount package.

  7. Is the BSS123 Pb-free and halogen-free?

    Yes, the BSS123 is Pb-free and halogen-free.

  8. What are some typical applications of the BSS123?

    Typical applications include small servo motor control, power MOSFET gate drivers, and high efficiency switched mode power supplies.

  9. What is the input capacitance of the BSS123?

    The input capacitance (Ciss) is typically 22 pF to 60 pF.

  10. How fast is the switching speed of the BSS123?

    The BSS123 has fast switching speeds, with turn-on delay times and rise times in the range of a few nanoseconds.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:73 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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