2N7002W
  • Share:

Diotec Semiconductor 2N7002W

Manufacturer No:
2N7002W
Manufacturer:
Diotec Semiconductor
Package:
Strip
Description:
MOSFET, SOT-323, 60V, 0.115A, N,
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002W is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by Diotec Semiconductor. This component is part of the MOSFET family, which is widely used in power switching, signal processing, and polarity protection applications. The 2N7002W is housed in a SOT-23 package, making it suitable for a variety of electronic designs where space is a consideration.

Key Specifications

Parameter Value
Package SOT-23
Channel Type N-channel
Drain-Source Voltage (V_DS) 60V
Continuous Drain Current (I_D) 0.28A
On-Resistance (R_DS(on))
Operating Temperature -55°C to 150°C
RoHS / REACH Compliance Yes

Key Features

  • Low On-Resistance: The 2N7002W has a low on-resistance of 5Ω, which minimizes power losses and enhances efficiency in switching applications.
  • High Drain-Source Voltage: With a V_DS of 60V, this MOSFET can handle high voltage requirements, making it suitable for a wide range of applications.
  • Compact SOT-23 Package: The small footprint of the SOT-23 package makes it ideal for space-constrained designs.
  • Enhancement Mode Operation: The 2N7002W operates in enhancement mode, which means it is normally off and requires a gate voltage to turn on, providing better control over the switching operation.
  • High Operating Temperature Range: The component can operate over a temperature range of -55°C to 150°C, making it robust for various environmental conditions.

Applications

  • Power Switching: The 2N7002W is commonly used in power switching applications due to its high voltage and current handling capabilities.
  • Signal Processing: It is also used in signal processing circuits where low on-resistance and high switching speed are required.
  • Polarity Protection: The MOSFET can be used to protect circuits from reverse polarity conditions, ensuring the integrity of the system.
  • Automotive and Industrial Systems: Its robustness and high operating temperature range make it suitable for use in automotive and industrial systems.
  • Consumer Electronics: It can be found in various consumer electronics such as power supplies, motor control circuits, and other electronic devices.

Q & A

  1. What is the package type of the 2N7002W MOSFET?

    The 2N7002W is housed in a SOT-23 package.

  2. What is the maximum drain-source voltage (V_DS) of the 2N7002W?

    The maximum drain-source voltage (V_DS) is 60V.

  3. What is the continuous drain current (I_D) of the 2N7002W?

    The continuous drain current (I_D) is 0.28A.

  4. What is the on-resistance (R_DS(on)) of the 2N7002W?

    The on-resistance (R_DS(on)) is 5Ω.

  5. Is the 2N7002W RoHS and REACH compliant?

    Yes, the 2N7002W is RoHS and REACH compliant.

  6. What are the typical applications of the 2N7002W MOSFET?

    The 2N7002W is typically used in power switching, signal processing, and polarity protection applications.

  7. What is the operating temperature range of the 2N7002W?

    The operating temperature range is -55°C to 150°C.

  8. Why is the 2N7002W preferred in space-constrained designs?

    The 2N7002W is preferred in space-constrained designs due to its compact SOT-23 package.

  9. Can the 2N7002W be used in automotive systems?

    Yes, the 2N7002W can be used in automotive systems due to its robustness and high operating temperature range.

  10. How does the 2N7002W operate?

    The 2N7002W operates in enhancement mode, meaning it is normally off and requires a gate voltage to turn on.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:13.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.05
240

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002W 2N7002A 2N7002E 2N7002K 2N7002KW 2N7002L 2N7002T
Manufacturer Diotec Semiconductor Diotec Semiconductor Vishay Siliconix MDD onsemi onsemi onsemi
Product Status Active Active Discontinued at Digi-Key Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 280mA (Ta) 240mA (Ta) 500mA (Ta) 310mA (Ta) 115mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 13.5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V 900mOhm @ 300mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.1V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.6 nC @ 4.5 V 0.31 nC @ 10 V - - -
Vgs (Max) ±20V ±30V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 21 pF @ 5 V 23.8 pF @ 10 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 200mW (Ta) 350mW (Ta) 350mW (Ta) 500mW (Ta) 350mW (Ta) 200mW (Ta) 200mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23 SOT-323 SOT-23-3 SC-89-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-89, SOT-490

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BAT54S-AQ
BAT54S-AQ
Diotec Semiconductor
SCHOTTKY SOT-23 30V 0.2A
BAV99-AQ
BAV99-AQ
Diotec Semiconductor
DIODE SOT-23 85V 0.21A 4NS
BAV70W-AQ
BAV70W-AQ
Diotec Semiconductor
Small SD, 75V, 0.17A, 4ns
BZX84C5V1-AQ
BZX84C5V1-AQ
Diotec Semiconductor
DIODE ZENER 5.1V 300MW SOT23-3
BZX84C9V1-AQ
BZX84C9V1-AQ
Diotec Semiconductor
DIODE ZENER 9.1V 300MW SOT23-3
BZX84C15
BZX84C15
Diotec Semiconductor
Zener, 15V, 0.3W, 5%
BZX84B33
BZX84B33
Diotec Semiconductor
Zener, 33V, 0.3W, 2%
BZX84C3V0
BZX84C3V0
Diotec Semiconductor
ZENERDIODE, SOT-23, 2.80V~3V, 3.
BC856C-AQ
BC856C-AQ
Diotec Semiconductor
TRANS PNP 65V 0.1A SOT23-3
BCX53-16
BCX53-16
Diotec Semiconductor
TRANS PNP 80V 1A SOT89
BC847B-C
BC847B-C
Diotec Semiconductor
BJT, SOT-23, 45V, 100MA, 0
BCX53-16R13
BCX53-16R13
Diotec Semiconductor
BJT, SOT-89, 80V, 1000MA, 0