2N7002L
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onsemi 2N7002L

Manufacturer No:
2N7002L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002L is an N-Channel enhancement mode field effect transistor (FET) produced by onsemi using high cell density, trench MOSFET technology. This device is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications and is widely used in various electronic systems due to its high performance and reliability.

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain-Source Voltage VDS -- -- 60 V
Drain-Gate Voltage VDG -- -- 60 V
Gate-Source Voltage (Continuous) VGS -- -- ±20 V
Gate-Source Voltage (Pulsed) VGSM -- -- ±40 V
Continuous Drain Current (TA = 25°C) ID -- -- 115 mA
Pulsed Drain Current IDM -- -- 800 mA
Drain-Source On-State Resistance (VGS = 10V, ID = 500mA) RDS(ON) -- 7.5 -- Ω
Gate Threshold Voltage (VDS = VGS, ID = 250mA) VGS(th) 1.0 -- 2.5 V
Input Capacitance (VDS = 25V, VGS = 0V, f = 1.0MHz) Ciss -- 12.8 50 pF

Key Features

  • High density cell design for extremely low RDS(ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability
  • Very low capacitance
  • Fast switching speed
  • Pb-free and halogen-free, fully RoHS compliant
  • Small surface mount package (SOT-23)

Applications

  • Small servo motor control
  • Power MOSFET gate drivers
  • Logic level translators
  • High-speed line drivers
  • Power management and power supply applications
  • Switching applications

Q & A

  1. What is the maximum drain-source voltage of the 2N7002L MOSFET?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the typical on-state resistance of the 2N7002L?

    The typical on-state resistance (RDS(ON)) is 7.5Ω at VGS = 10V and ID = 500mA.

  3. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is 115mA at TA = 25°C.

  4. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) ranges from 1.0V to 2.5V.

  5. Is the 2N7002L Pb-free and RoHS compliant?

    Yes, the 2N7002L is Pb-free, halogen-free, and fully RoHS compliant.

  6. What are some common applications for the 2N7002L?

    Common applications include small servo motor control, power MOSFET gate drivers, logic level translators, high-speed line drivers, and power management/power supply applications.

  7. What is the package type of the 2N7002L?

    The 2N7002L comes in a small surface mount package (SOT-23).

  8. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 800mA.

  9. What is the input capacitance of the 2N7002L?

    The input capacitance (Ciss) is typically 12.8pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

  10. Is the 2N7002L suitable for high-speed switching applications?

    Yes, the 2N7002L is designed for fast switching performance, making it suitable for high-speed switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.28
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Similar Products

Part Number 2N7002L 2N7002W 2N7002T 2N7002 2N7002A 2N7002E 2N7002K
Manufacturer onsemi Diotec Semiconductor onsemi NTE Electronics, Inc Diotec Semiconductor Vishay Siliconix MDD
Product Status Active Active Active Active Active Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta) 115mA (Ta) 115mA (Ta) 280mA (Ta) 240mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 13.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V 900mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - - - 0.6 nC @ 4.5 V 0.31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 21 pF @ 5 V 23.8 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta) 200mW (Ta) 200mW (Ta) 350mW (Ta) 350mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SC-89-3 SOT-23-3 SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-89, SOT-490 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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