STD10NM60N
  • Share:

STMicroelectronics STD10NM60N

Manufacturer No:
STD10NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD10NM60N is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the second generation of MDmesh technology. This device is renowned for its revolutionary design, which combines a vertical structure with a strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly efficient for various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)0.53 Ohm (typ.)
ID (Continuous Drain Current)10 A
PD (Power Dissipation)70 W
PackageDPAK

Key Features

  • Low on-resistance (RDS(on)) of 0.53 Ohm (typ.), enhancing efficiency in power management.
  • Low gate charge, reducing switching losses.
  • High voltage rating of 600 V, suitable for high-power applications.
  • MDmesh II technology for improved performance and reliability.
  • DPAK package for compact and efficient design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial and consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the STD10NM60N? The STD10NM60N is an N-channel Power MOSFET developed by STMicroelectronics using MDmesh II technology.
  2. What is the maximum drain-source voltage of the STD10NM60N? The maximum drain-source voltage is 600 V.
  3. What is the typical on-resistance of the STD10NM60N? The typical on-resistance is 0.53 Ohm.
  4. What is the continuous drain current rating of the STD10NM60N? The continuous drain current rating is 10 A.
  5. What package type is the STD10NM60N available in? The STD10NM60N is available in a DPAK package.
  6. What are the key benefits of using MDmesh II technology in the STD10NM60N? MDmesh II technology provides low on-resistance and gate charge, enhancing efficiency and reducing switching losses.
  7. In what types of applications is the STD10NM60N commonly used? The STD10NM60N is commonly used in power supplies, motor control, industrial and consumer electronics, automotive systems, and renewable energy systems.
  8. What is the power dissipation rating of the STD10NM60N? The power dissipation rating is 70 W.
  9. Where can I find detailed specifications for the STD10NM60N? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website.
  10. Is the STD10NM60N suitable for high-power applications? Yes, the STD10NM60N is suitable for high-power applications due to its high voltage and current ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.96
9

Please send RFQ , we will respond immediately.

Same Series
STU10NM60N
STU10NM60N
MOSFET N-CH 600V 10A IPAK
STI10NM60N
STI10NM60N
MOSFET N-CH 600V 10A I2PAK
STD10NM60N
STD10NM60N
MOSFET N-CH 600V 10A DPAK
STP10NM60N
STP10NM60N
MOSFET N-CH 600V 10A TO220AB

Similar Products

Part Number STD10NM60N STD10NM60ND STD13NM60N STD11NM60N STD10NM65N STD10NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 8A (Tc) 11A (Tc) 10A (Tc) 9A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V 600mOhm @ 4A, 10V 360mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 480mOhm @ 4.5A, 10V 630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 20 nC @ 10 V 30 nC @ 10 V 31 nC @ 10 V 25 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V 577 pF @ 50 V 790 pF @ 50 V 850 pF @ 50 V 850 pF @ 50 V 450 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 70W (Tc) 70W (Tc) 90W (Tc) 90W (Tc) 90W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
M74HC174RM13TR
M74HC174RM13TR
STMicroelectronics
IC FF D-TYPE SNGL 6BIT 16SOP
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12