STD10NM60N
  • Share:

STMicroelectronics STD10NM60N

Manufacturer No:
STD10NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD10NM60N is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the second generation of MDmesh technology. This device is renowned for its revolutionary design, which combines a vertical structure with a strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly efficient for various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)0.53 Ohm (typ.)
ID (Continuous Drain Current)10 A
PD (Power Dissipation)70 W
PackageDPAK

Key Features

  • Low on-resistance (RDS(on)) of 0.53 Ohm (typ.), enhancing efficiency in power management.
  • Low gate charge, reducing switching losses.
  • High voltage rating of 600 V, suitable for high-power applications.
  • MDmesh II technology for improved performance and reliability.
  • DPAK package for compact and efficient design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial and consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the STD10NM60N? The STD10NM60N is an N-channel Power MOSFET developed by STMicroelectronics using MDmesh II technology.
  2. What is the maximum drain-source voltage of the STD10NM60N? The maximum drain-source voltage is 600 V.
  3. What is the typical on-resistance of the STD10NM60N? The typical on-resistance is 0.53 Ohm.
  4. What is the continuous drain current rating of the STD10NM60N? The continuous drain current rating is 10 A.
  5. What package type is the STD10NM60N available in? The STD10NM60N is available in a DPAK package.
  6. What are the key benefits of using MDmesh II technology in the STD10NM60N? MDmesh II technology provides low on-resistance and gate charge, enhancing efficiency and reducing switching losses.
  7. In what types of applications is the STD10NM60N commonly used? The STD10NM60N is commonly used in power supplies, motor control, industrial and consumer electronics, automotive systems, and renewable energy systems.
  8. What is the power dissipation rating of the STD10NM60N? The power dissipation rating is 70 W.
  9. Where can I find detailed specifications for the STD10NM60N? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website.
  10. Is the STD10NM60N suitable for high-power applications? Yes, the STD10NM60N is suitable for high-power applications due to its high voltage and current ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.96
9

Please send RFQ , we will respond immediately.

Same Series
STU10NM60N
STU10NM60N
MOSFET N-CH 600V 10A IPAK
STI10NM60N
STI10NM60N
MOSFET N-CH 600V 10A I2PAK
STD10NM60N
STD10NM60N
MOSFET N-CH 600V 10A DPAK
STP10NM60N
STP10NM60N
MOSFET N-CH 600V 10A TO220AB

Similar Products

Part Number STD10NM60N STD10NM60ND STD13NM60N STD11NM60N STD10NM65N STD10NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 8A (Tc) 11A (Tc) 10A (Tc) 9A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V 600mOhm @ 4A, 10V 360mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 480mOhm @ 4.5A, 10V 630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 20 nC @ 10 V 30 nC @ 10 V 31 nC @ 10 V 25 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V 577 pF @ 50 V 790 pF @ 50 V 850 pF @ 50 V 850 pF @ 50 V 450 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 70W (Tc) 70W (Tc) 90W (Tc) 90W (Tc) 90W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK