STD10NM60N
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STMicroelectronics STD10NM60N

Manufacturer No:
STD10NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 10A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD10NM60N is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the second generation of MDmesh technology. This device is renowned for its revolutionary design, which combines a vertical structure with a strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly efficient for various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)0.53 Ohm (typ.)
ID (Continuous Drain Current)10 A
PD (Power Dissipation)70 W
PackageDPAK

Key Features

  • Low on-resistance (RDS(on)) of 0.53 Ohm (typ.), enhancing efficiency in power management.
  • Low gate charge, reducing switching losses.
  • High voltage rating of 600 V, suitable for high-power applications.
  • MDmesh II technology for improved performance and reliability.
  • DPAK package for compact and efficient design.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial and consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the STD10NM60N? The STD10NM60N is an N-channel Power MOSFET developed by STMicroelectronics using MDmesh II technology.
  2. What is the maximum drain-source voltage of the STD10NM60N? The maximum drain-source voltage is 600 V.
  3. What is the typical on-resistance of the STD10NM60N? The typical on-resistance is 0.53 Ohm.
  4. What is the continuous drain current rating of the STD10NM60N? The continuous drain current rating is 10 A.
  5. What package type is the STD10NM60N available in? The STD10NM60N is available in a DPAK package.
  6. What are the key benefits of using MDmesh II technology in the STD10NM60N? MDmesh II technology provides low on-resistance and gate charge, enhancing efficiency and reducing switching losses.
  7. In what types of applications is the STD10NM60N commonly used? The STD10NM60N is commonly used in power supplies, motor control, industrial and consumer electronics, automotive systems, and renewable energy systems.
  8. What is the power dissipation rating of the STD10NM60N? The power dissipation rating is 70 W.
  9. Where can I find detailed specifications for the STD10NM60N? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website.
  10. Is the STD10NM60N suitable for high-power applications? Yes, the STD10NM60N is suitable for high-power applications due to its high voltage and current ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD10NM60N STD10NM60ND STD13NM60N STD11NM60N STD10NM65N STD10NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 8A (Tc) 11A (Tc) 10A (Tc) 9A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V 600mOhm @ 4A, 10V 360mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 480mOhm @ 4.5A, 10V 630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 20 nC @ 10 V 30 nC @ 10 V 31 nC @ 10 V 25 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V 577 pF @ 50 V 790 pF @ 50 V 850 pF @ 50 V 850 pF @ 50 V 450 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 70W (Tc) 70W (Tc) 90W (Tc) 90W (Tc) 90W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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