BSS123L
  • Share:

onsemi BSS123L

Manufacturer No:
BSS123L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123L is an N-channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This transistor is manufactured using high cell density, trench MOSFET technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications and is available in a compact SOT-23 surface mount package. The device is Pb-free and halogen-free, making it compliant with RoHS standards.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 100 V
Gate-Source Voltage (VGSS) ±20 V
Maximum Drain Current - Continuous (ID) 0.17 A
Maximum Drain Current - Pulsed (ID) 0.68 A
Drain-Source On-Resistance (RDS(ON)) at VGS = 10 V 6 Ω
Drain-Source On-Resistance (RDS(ON)) at VGS = 4.5 V 10 Ω
Maximum Power Dissipation (PD) 0.36 W
Input Capacitance (Ciss) 21.5 pF
Output Capacitance (Coss) 3.52 pF
Reverse Transfer Capacitance (Crss) 1.67 pF
Gate Resistance (RG) 7.18 Ω
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • High cell density, trench MOSFET technology for low RDS(ON)
  • Rugged and reliable performance
  • Fast switching speed
  • Very low capacitance
  • Pb-free and halogen-free, RoHS compliant
  • Compact industry standard SOT-23 surface mount package

Applications

  • Low-voltage, low-current applications
  • Small servo motor control
  • Power MOSFET gate drivers
  • Logic level transistor applications
  • High-speed line drivers
  • Power management and power supply applications
  • Switching applications

Q & A

  1. What is the maximum drain-source voltage of the BSS123L?

    The maximum drain-source voltage (VDSS) is 100 V.

  2. What is the maximum continuous drain current of the BSS123L?

    The maximum continuous drain current (ID) is 0.17 A.

  3. What is the typical on-state resistance at VGS = 10 V?

    The typical on-state resistance (RDS(ON)) at VGS = 10 V is 6 Ω.

  4. What is the package style of the BSS123L?

    The package style is SOT-23 (SC-59, TO-236).

  5. Is the BSS123L Pb-free and halogen-free?

    Yes, the BSS123L is Pb-free and halogen-free, making it RoHS compliant.

  6. What are some typical applications of the BSS123L?

    Typical applications include small servo motor control, power MOSFET gate drivers, logic level transistor applications, high-speed line drivers, and power management/power supply applications.

  7. What is the maximum power dissipation of the BSS123L?

    The maximum power dissipation (PD) is 0.36 W.

  8. What is the input capacitance of the BSS123L?

    The input capacitance (Ciss) is 21.5 pF.

  9. What is the gate resistance of the BSS123L?

    The gate resistance (RG) is 7.18 Ω.

  10. How is the BSS123L mounted?

    The BSS123L is surface mounted.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21.5 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.33
758

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS123L BSS123W BSS123
Manufacturer onsemi Taiwan Semiconductor Corporation onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 160mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 5Ohm @ 160mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.5V @ 250µA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 10 V 2 nC @ 10 V 2.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 21.5 pF @ 25 V 30 pF @ 50 V 73 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 298mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP