BSS123L
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onsemi BSS123L

Manufacturer No:
BSS123L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BSS123L is an N-channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This transistor is manufactured using high cell density, trench MOSFET technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications and is available in a compact SOT-23 surface mount package. The device is Pb-free and halogen-free, making it compliant with RoHS standards.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 100 V
Gate-Source Voltage (VGSS) ±20 V
Maximum Drain Current - Continuous (ID) 0.17 A
Maximum Drain Current - Pulsed (ID) 0.68 A
Drain-Source On-Resistance (RDS(ON)) at VGS = 10 V 6 Ω
Drain-Source On-Resistance (RDS(ON)) at VGS = 4.5 V 10 Ω
Maximum Power Dissipation (PD) 0.36 W
Input Capacitance (Ciss) 21.5 pF
Output Capacitance (Coss) 3.52 pF
Reverse Transfer Capacitance (Crss) 1.67 pF
Gate Resistance (RG) 7.18 Ω
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • High cell density, trench MOSFET technology for low RDS(ON)
  • Rugged and reliable performance
  • Fast switching speed
  • Very low capacitance
  • Pb-free and halogen-free, RoHS compliant
  • Compact industry standard SOT-23 surface mount package

Applications

  • Low-voltage, low-current applications
  • Small servo motor control
  • Power MOSFET gate drivers
  • Logic level transistor applications
  • High-speed line drivers
  • Power management and power supply applications
  • Switching applications

Q & A

  1. What is the maximum drain-source voltage of the BSS123L?

    The maximum drain-source voltage (VDSS) is 100 V.

  2. What is the maximum continuous drain current of the BSS123L?

    The maximum continuous drain current (ID) is 0.17 A.

  3. What is the typical on-state resistance at VGS = 10 V?

    The typical on-state resistance (RDS(ON)) at VGS = 10 V is 6 Ω.

  4. What is the package style of the BSS123L?

    The package style is SOT-23 (SC-59, TO-236).

  5. Is the BSS123L Pb-free and halogen-free?

    Yes, the BSS123L is Pb-free and halogen-free, making it RoHS compliant.

  6. What are some typical applications of the BSS123L?

    Typical applications include small servo motor control, power MOSFET gate drivers, logic level transistor applications, high-speed line drivers, and power management/power supply applications.

  7. What is the maximum power dissipation of the BSS123L?

    The maximum power dissipation (PD) is 0.36 W.

  8. What is the input capacitance of the BSS123L?

    The input capacitance (Ciss) is 21.5 pF.

  9. What is the gate resistance of the BSS123L?

    The gate resistance (RG) is 7.18 Ω.

  10. How is the BSS123L mounted?

    The BSS123L is surface mounted.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21.5 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS123L BSS123W BSS123
Manufacturer onsemi Taiwan Semiconductor Corporation onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 160mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 5Ohm @ 160mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.5V @ 250µA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 10 V 2 nC @ 10 V 2.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 21.5 pF @ 25 V 30 pF @ 50 V 73 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 298mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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