BSS123L
  • Share:

onsemi BSS123L

Manufacturer No:
BSS123L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123L is an N-channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This transistor is manufactured using high cell density, trench MOSFET technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications and is available in a compact SOT-23 surface mount package. The device is Pb-free and halogen-free, making it compliant with RoHS standards.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 100 V
Gate-Source Voltage (VGSS) ±20 V
Maximum Drain Current - Continuous (ID) 0.17 A
Maximum Drain Current - Pulsed (ID) 0.68 A
Drain-Source On-Resistance (RDS(ON)) at VGS = 10 V 6 Ω
Drain-Source On-Resistance (RDS(ON)) at VGS = 4.5 V 10 Ω
Maximum Power Dissipation (PD) 0.36 W
Input Capacitance (Ciss) 21.5 pF
Output Capacitance (Coss) 3.52 pF
Reverse Transfer Capacitance (Crss) 1.67 pF
Gate Resistance (RG) 7.18 Ω
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • High cell density, trench MOSFET technology for low RDS(ON)
  • Rugged and reliable performance
  • Fast switching speed
  • Very low capacitance
  • Pb-free and halogen-free, RoHS compliant
  • Compact industry standard SOT-23 surface mount package

Applications

  • Low-voltage, low-current applications
  • Small servo motor control
  • Power MOSFET gate drivers
  • Logic level transistor applications
  • High-speed line drivers
  • Power management and power supply applications
  • Switching applications

Q & A

  1. What is the maximum drain-source voltage of the BSS123L?

    The maximum drain-source voltage (VDSS) is 100 V.

  2. What is the maximum continuous drain current of the BSS123L?

    The maximum continuous drain current (ID) is 0.17 A.

  3. What is the typical on-state resistance at VGS = 10 V?

    The typical on-state resistance (RDS(ON)) at VGS = 10 V is 6 Ω.

  4. What is the package style of the BSS123L?

    The package style is SOT-23 (SC-59, TO-236).

  5. Is the BSS123L Pb-free and halogen-free?

    Yes, the BSS123L is Pb-free and halogen-free, making it RoHS compliant.

  6. What are some typical applications of the BSS123L?

    Typical applications include small servo motor control, power MOSFET gate drivers, logic level transistor applications, high-speed line drivers, and power management/power supply applications.

  7. What is the maximum power dissipation of the BSS123L?

    The maximum power dissipation (PD) is 0.36 W.

  8. What is the input capacitance of the BSS123L?

    The input capacitance (Ciss) is 21.5 pF.

  9. What is the gate resistance of the BSS123L?

    The gate resistance (RG) is 7.18 Ω.

  10. How is the BSS123L mounted?

    The BSS123L is surface mounted.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21.5 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.33
758

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS123L BSS123W BSS123
Manufacturer onsemi Taiwan Semiconductor Corporation onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 160mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 5Ohm @ 160mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.5V @ 250µA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 10 V 2 nC @ 10 V 2.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 21.5 pF @ 25 V 30 pF @ 50 V 73 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 298mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR