NTLUS3A18PZTAG
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onsemi NTLUS3A18PZTAG

Manufacturer No:
NTLUS3A18PZTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 5.1A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLUS3A18PZTAG is a P-Channel power MOSFET manufactured by onsemi. This device is designed for high-performance power management applications, particularly in portable products such as cell phones, media tablets, and other consumer electronics. It features a compact UDFN6 package with exposed drain pads, which enhances thermal conduction and saves board space.

Key Specifications

ParameterSymbolValueUnit
Maximum Drain-Source VoltageVDS-20V
Maximum Gate-Source VoltageVGS±8.0V
Maximum Drain CurrentID-5.1A
Maximum Junction TemperatureTJ150°C
Maximum Power DissipationPd0.7W
On-State ResistanceRds(on)0.018Ω
Total Gate ChargeQg28nC
Rise Timetr15nS
Output CapacitanceCoss240pF
Package TypeUDFN6

Key Features

  • Ultra-low on-state resistance (Rds(on)) of 0.018 Ω at VGS = -4.5 V.
  • ESD diode-protected gate for enhanced reliability.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • Compact UDFN6 package with exposed drain pads for excellent thermal conduction and board space saving.
  • Low profile UDFN package measuring 2.0x2.0x0.55 mm.

Applications

  • Optimized for power management in portable products such as cell phones, media tablets, PMP (Portable Media Players), DSC (Digital Still Cameras), GPS, and other similar devices.
  • Battery switch applications.
  • High side load switch applications.

Q & A

  1. What is the maximum drain-source voltage of the NTLUS3A18PZTAG MOSFET? The maximum drain-source voltage is -20 V.
  2. What is the maximum gate-source voltage for this MOSFET? The maximum gate-source voltage is ±8.0 V.
  3. What is the maximum drain current of the NTLUS3A18PZTAG? The maximum drain current is -5.1 A.
  4. What is the maximum junction temperature for this device? The maximum junction temperature is 150 °C.
  5. What is the on-state resistance of the NTLUS3A18PZTAG? The on-state resistance (Rds(on)) is 0.018 Ω at VGS = -4.5 V.
  6. Is the NTLUS3A18PZTAG RoHS compliant? Yes, the device is Pb-free, halogen-free, and RoHS compliant.
  7. What is the package type of the NTLUS3A18PZTAG? The package type is UDFN6.
  8. What are some typical applications of the NTLUS3A18PZTAG? Typical applications include power management in portable products, battery switches, and high side load switches.
  9. What is the total gate charge of the NTLUS3A18PZTAG? The total gate charge is 28 nC.
  10. What is the rise time of the NTLUS3A18PZTAG? The rise time is 15 nS.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2240 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (2x2)
Package / Case:6-UDFN Exposed Pad
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Same Series
NTLUS3A18PZTCG
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NTLUS3A18PZTBG
NTLUS3A18PZTBG
MOSFET P-CH 20V 5.1A 6UDFN

Similar Products

Part Number NTLUS3A18PZTAG NTLUS3A18PZTCG NTLUS3A18PZTBG NTLUS3C18PZTAG NTLUS3A18PZCTAG
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) 5.1A (Ta) 5.1A (Ta) 4.4A (Ta) 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 18mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V 24mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V 28 nC @ 4.5 V 28 nC @ 4.5 V 15.8 nC @ 4.5 V 28 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2240 pF @ 15 V 2240 pF @ 15 V 2240 pF @ 15 V 1570 pF @ 6 V 2240 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta) 700mW (Ta) 660mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-UDFN (2x2) 6-UDFN (2x2) 6-UDFN (2x2) 6-UDFN (1.6x1.6) 6-UDFN (2x2)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-PowerUFDFN 6-UDFN Exposed Pad

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