2N7002 TR PBFREE
  • Share:

Central Semiconductor Corp 2N7002 TR PBFREE

Manufacturer No:
2N7002 TR PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Central Semiconductor 2N7002 TR PBFREE is an N-Channel enhancement-mode MOSFET designed and manufactured using the N-Channel DMOS process. This surface-mount device is packaged in a SOT-23 (SC-59, TO-236) case and is lead-free, making it compliant with RoHS standards. It is optimized for high-speed pulsed amplifier and driver applications, offering low on-resistance and high efficiency.

Key Specifications

Attribute Value Units
FET Type N-Ch
No of Channels 1
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance-Max (rDS(ON)) 7.5 Ω
Rated Power Dissipation (PD) 350 mW
Gate-Source Voltage-Max (Vgss) 40 V
Drain Current (ID) 115 mA
Operating Temp Range -65°C to +150°C
Gate Source Threshold (VGS(th)) 1.0 to 2.5 V
Input Capacitance 50 pF
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-Resistance: The 2N7002 TR PBFREE features a maximum on-resistance of 7.5Ω, ensuring efficient operation in various applications.
  • High Speed Operation: Designed for high-speed pulsed amplifier and driver applications, this MOSFET offers fast switching times.
  • RoHS Compliance: The device is lead-free, making it compliant with RoHS standards and suitable for use in environmentally friendly designs.
  • Compact Packaging: The SOT-23 package is compact and suitable for surface mount applications, saving board space.
  • Wide Operating Temperature Range: The MOSFET operates over a temperature range of -65°C to +150°C, making it versatile for various environmental conditions.

Applications

  • High-Speed Pulsed Amplifiers: The 2N7002 TR PBFREE is ideal for applications requiring fast switching and low on-resistance.
  • Driver Circuits: It is commonly used in driver circuits for motors, LEDs, and other high-current devices.
  • Power Management: Suitable for use in power management circuits due to its high efficiency and low power dissipation.
  • Automotive and Industrial Control Systems: Its robust design and wide operating temperature range make it suitable for use in automotive and industrial control systems.

Q & A

  1. What is the maximum drain-to-source voltage of the 2N7002 TR PBFREE?

    The maximum drain-to-source voltage (Vdss) is 60V.

  2. What is the typical on-resistance of the 2N7002 TR PBFREE?

    The typical on-resistance (rDS(ON)) is 7.5Ω.

  3. What is the maximum continuous drain current of the 2N7002 TR PBFREE?

    The maximum continuous drain current (ID) is 115mA at 25°C and 75mA at 100°C.

  4. What is the operating temperature range of the 2N7002 TR PBFREE?

    The operating temperature range is -65°C to +150°C.

  5. Is the 2N7002 TR PBFREE RoHS compliant?

    Yes, the 2N7002 TR PBFREE is lead-free and RoHS compliant.

  6. What is the package style of the 2N7002 TR PBFREE?

    The package style is SOT-23 (SC-59, TO-236).

  7. What are the typical applications of the 2N7002 TR PBFREE?

    Typical applications include high-speed pulsed amplifiers, driver circuits, power management, and automotive and industrial control systems.

  8. What is the maximum gate-source voltage of the 2N7002 TR PBFREE?

    The maximum gate-source voltage (Vgss) is 40V.

  9. What is the thermal resistance of the 2N7002 TR PBFREE?

    The thermal resistance (ΘJA) is 357°C/W.

  10. How many devices are typically included in a reel?

    A reel typically includes 3000 devices.

  11. What is the maximum power dissipation of the 2N7002 TR PBFREE?

    The maximum power dissipation (PD) is 350mW).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):40V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
1,144

Please send RFQ , we will respond immediately.

Same Series
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

1N34A BK
1N34A BK
Central Semiconductor Corp
DIODE GEN PURP 75V 50MA DO7
BZX84C10 TR PBFREE
BZX84C10 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 10V 350MW SOT23
BZX84C30 BK
BZX84C30 BK
Central Semiconductor Corp
DIODE ZENER 30V 500MW SOT23
1N5388B BK
1N5388B BK
Central Semiconductor Corp
TRANSISTOR
1N5350B BK
1N5350B BK
Central Semiconductor Corp
TRANSISTOR
2N6075A PBFREE
2N6075A PBFREE
Central Semiconductor Corp
TRIAC 4A 600V TO-126
BC846BT TR PBFREE
BC846BT TR PBFREE
Central Semiconductor Corp
TRANS NPN 65V 0.1A SOT523
TIP31C PBFREE
TIP31C PBFREE
Central Semiconductor Corp
TRANS NPN 100V 3A TO220-3
TIP42C PBFREE
TIP42C PBFREE
Central Semiconductor Corp
TRANS PNP 100V 6A TO220-3
TIP47 SL
TIP47 SL
Central Semiconductor Corp
TRANS NPN 250V 1A TO220-3
TIP36C TO-247 SL
TIP36C TO-247 SL
Central Semiconductor Corp
TIP36C TO-247 SL
2N7002 BK PBFREE
2N7002 BK PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23