2N7002 TR PBFREE
  • Share:

Central Semiconductor Corp 2N7002 TR PBFREE

Manufacturer No:
2N7002 TR PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Central Semiconductor 2N7002 TR PBFREE is an N-Channel enhancement-mode MOSFET designed and manufactured using the N-Channel DMOS process. This surface-mount device is packaged in a SOT-23 (SC-59, TO-236) case and is lead-free, making it compliant with RoHS standards. It is optimized for high-speed pulsed amplifier and driver applications, offering low on-resistance and high efficiency.

Key Specifications

Attribute Value Units
FET Type N-Ch
No of Channels 1
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance-Max (rDS(ON)) 7.5 Ω
Rated Power Dissipation (PD) 350 mW
Gate-Source Voltage-Max (Vgss) 40 V
Drain Current (ID) 115 mA
Operating Temp Range -65°C to +150°C
Gate Source Threshold (VGS(th)) 1.0 to 2.5 V
Input Capacitance 50 pF
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-Resistance: The 2N7002 TR PBFREE features a maximum on-resistance of 7.5Ω, ensuring efficient operation in various applications.
  • High Speed Operation: Designed for high-speed pulsed amplifier and driver applications, this MOSFET offers fast switching times.
  • RoHS Compliance: The device is lead-free, making it compliant with RoHS standards and suitable for use in environmentally friendly designs.
  • Compact Packaging: The SOT-23 package is compact and suitable for surface mount applications, saving board space.
  • Wide Operating Temperature Range: The MOSFET operates over a temperature range of -65°C to +150°C, making it versatile for various environmental conditions.

Applications

  • High-Speed Pulsed Amplifiers: The 2N7002 TR PBFREE is ideal for applications requiring fast switching and low on-resistance.
  • Driver Circuits: It is commonly used in driver circuits for motors, LEDs, and other high-current devices.
  • Power Management: Suitable for use in power management circuits due to its high efficiency and low power dissipation.
  • Automotive and Industrial Control Systems: Its robust design and wide operating temperature range make it suitable for use in automotive and industrial control systems.

Q & A

  1. What is the maximum drain-to-source voltage of the 2N7002 TR PBFREE?

    The maximum drain-to-source voltage (Vdss) is 60V.

  2. What is the typical on-resistance of the 2N7002 TR PBFREE?

    The typical on-resistance (rDS(ON)) is 7.5Ω.

  3. What is the maximum continuous drain current of the 2N7002 TR PBFREE?

    The maximum continuous drain current (ID) is 115mA at 25°C and 75mA at 100°C.

  4. What is the operating temperature range of the 2N7002 TR PBFREE?

    The operating temperature range is -65°C to +150°C.

  5. Is the 2N7002 TR PBFREE RoHS compliant?

    Yes, the 2N7002 TR PBFREE is lead-free and RoHS compliant.

  6. What is the package style of the 2N7002 TR PBFREE?

    The package style is SOT-23 (SC-59, TO-236).

  7. What are the typical applications of the 2N7002 TR PBFREE?

    Typical applications include high-speed pulsed amplifiers, driver circuits, power management, and automotive and industrial control systems.

  8. What is the maximum gate-source voltage of the 2N7002 TR PBFREE?

    The maximum gate-source voltage (Vgss) is 40V.

  9. What is the thermal resistance of the 2N7002 TR PBFREE?

    The thermal resistance (ΘJA) is 357°C/W.

  10. How many devices are typically included in a reel?

    A reel typically includes 3000 devices.

  11. What is the maximum power dissipation of the 2N7002 TR PBFREE?

    The maximum power dissipation (PD) is 350mW).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):40V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
1,144

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI

Related Product By Brand

BAS28 BK TIN/LEAD
BAS28 BK TIN/LEAD
Central Semiconductor Corp
DIODE SW 75V 250MA SOT143
1N4004GPP BK
1N4004GPP BK
Central Semiconductor Corp
DIODE GEN PURP 400V 1A DO41
1N4007GPP TR
1N4007GPP TR
Central Semiconductor Corp
DIODE GEN PURP 1KV 1A DO41
1N4001G BK
1N4001G BK
Central Semiconductor Corp
DIODE GEN PURPOSE DO41
BZX84C5V6 TR PBFREE
BZX84C5V6 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 5.6V 350MW SOT23
BZX84C9V1 TR
BZX84C9V1 TR
Central Semiconductor Corp
DIODE ZENER 9.1V 350MW SOT23
BZX84C8V2 TR
BZX84C8V2 TR
Central Semiconductor Corp
DIODE ZENER 8.2V 350MW SOT23
TIP125 SL TIN/LEAD
TIP125 SL TIN/LEAD
Central Semiconductor Corp
TRANS NPN DARL 60V 5A TO220-3
2N6107 PBFREE
2N6107 PBFREE
Central Semiconductor Corp
TRANS PNP 70V 7A TO220-3
TIP112 TIN/LEAD
TIP112 TIN/LEAD
Central Semiconductor Corp
TRANS NPN DARL 100V TO220-3
TIP102 PBFREE
TIP102 PBFREE
Central Semiconductor Corp
TRANS NPN DARL 100V 8A TO220-3
MJ2955 PBFREE
MJ2955 PBFREE
Central Semiconductor Corp
TRANS PNP 70V 15A TO3