2N7002 TR PBFREE
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Central Semiconductor Corp 2N7002 TR PBFREE

Manufacturer No:
2N7002 TR PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Central Semiconductor 2N7002 TR PBFREE is an N-Channel enhancement-mode MOSFET designed and manufactured using the N-Channel DMOS process. This surface-mount device is packaged in a SOT-23 (SC-59, TO-236) case and is lead-free, making it compliant with RoHS standards. It is optimized for high-speed pulsed amplifier and driver applications, offering low on-resistance and high efficiency.

Key Specifications

Attribute Value Units
FET Type N-Ch
No of Channels 1
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance-Max (rDS(ON)) 7.5 Ω
Rated Power Dissipation (PD) 350 mW
Gate-Source Voltage-Max (Vgss) 40 V
Drain Current (ID) 115 mA
Operating Temp Range -65°C to +150°C
Gate Source Threshold (VGS(th)) 1.0 to 2.5 V
Input Capacitance 50 pF
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-Resistance: The 2N7002 TR PBFREE features a maximum on-resistance of 7.5Ω, ensuring efficient operation in various applications.
  • High Speed Operation: Designed for high-speed pulsed amplifier and driver applications, this MOSFET offers fast switching times.
  • RoHS Compliance: The device is lead-free, making it compliant with RoHS standards and suitable for use in environmentally friendly designs.
  • Compact Packaging: The SOT-23 package is compact and suitable for surface mount applications, saving board space.
  • Wide Operating Temperature Range: The MOSFET operates over a temperature range of -65°C to +150°C, making it versatile for various environmental conditions.

Applications

  • High-Speed Pulsed Amplifiers: The 2N7002 TR PBFREE is ideal for applications requiring fast switching and low on-resistance.
  • Driver Circuits: It is commonly used in driver circuits for motors, LEDs, and other high-current devices.
  • Power Management: Suitable for use in power management circuits due to its high efficiency and low power dissipation.
  • Automotive and Industrial Control Systems: Its robust design and wide operating temperature range make it suitable for use in automotive and industrial control systems.

Q & A

  1. What is the maximum drain-to-source voltage of the 2N7002 TR PBFREE?

    The maximum drain-to-source voltage (Vdss) is 60V.

  2. What is the typical on-resistance of the 2N7002 TR PBFREE?

    The typical on-resistance (rDS(ON)) is 7.5Ω.

  3. What is the maximum continuous drain current of the 2N7002 TR PBFREE?

    The maximum continuous drain current (ID) is 115mA at 25°C and 75mA at 100°C.

  4. What is the operating temperature range of the 2N7002 TR PBFREE?

    The operating temperature range is -65°C to +150°C.

  5. Is the 2N7002 TR PBFREE RoHS compliant?

    Yes, the 2N7002 TR PBFREE is lead-free and RoHS compliant.

  6. What is the package style of the 2N7002 TR PBFREE?

    The package style is SOT-23 (SC-59, TO-236).

  7. What are the typical applications of the 2N7002 TR PBFREE?

    Typical applications include high-speed pulsed amplifiers, driver circuits, power management, and automotive and industrial control systems.

  8. What is the maximum gate-source voltage of the 2N7002 TR PBFREE?

    The maximum gate-source voltage (Vgss) is 40V.

  9. What is the thermal resistance of the 2N7002 TR PBFREE?

    The thermal resistance (ΘJA) is 357°C/W.

  10. How many devices are typically included in a reel?

    A reel typically includes 3000 devices.

  11. What is the maximum power dissipation of the 2N7002 TR PBFREE?

    The maximum power dissipation (PD) is 350mW).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):40V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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