2N7002 TR PBFREE
  • Share:

Central Semiconductor Corp 2N7002 TR PBFREE

Manufacturer No:
2N7002 TR PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Central Semiconductor 2N7002 TR PBFREE is an N-Channel enhancement-mode MOSFET designed and manufactured using the N-Channel DMOS process. This surface-mount device is packaged in a SOT-23 (SC-59, TO-236) case and is lead-free, making it compliant with RoHS standards. It is optimized for high-speed pulsed amplifier and driver applications, offering low on-resistance and high efficiency.

Key Specifications

Attribute Value Units
FET Type N-Ch
No of Channels 1
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance-Max (rDS(ON)) 7.5 Ω
Rated Power Dissipation (PD) 350 mW
Gate-Source Voltage-Max (Vgss) 40 V
Drain Current (ID) 115 mA
Operating Temp Range -65°C to +150°C
Gate Source Threshold (VGS(th)) 1.0 to 2.5 V
Input Capacitance 50 pF
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-Resistance: The 2N7002 TR PBFREE features a maximum on-resistance of 7.5Ω, ensuring efficient operation in various applications.
  • High Speed Operation: Designed for high-speed pulsed amplifier and driver applications, this MOSFET offers fast switching times.
  • RoHS Compliance: The device is lead-free, making it compliant with RoHS standards and suitable for use in environmentally friendly designs.
  • Compact Packaging: The SOT-23 package is compact and suitable for surface mount applications, saving board space.
  • Wide Operating Temperature Range: The MOSFET operates over a temperature range of -65°C to +150°C, making it versatile for various environmental conditions.

Applications

  • High-Speed Pulsed Amplifiers: The 2N7002 TR PBFREE is ideal for applications requiring fast switching and low on-resistance.
  • Driver Circuits: It is commonly used in driver circuits for motors, LEDs, and other high-current devices.
  • Power Management: Suitable for use in power management circuits due to its high efficiency and low power dissipation.
  • Automotive and Industrial Control Systems: Its robust design and wide operating temperature range make it suitable for use in automotive and industrial control systems.

Q & A

  1. What is the maximum drain-to-source voltage of the 2N7002 TR PBFREE?

    The maximum drain-to-source voltage (Vdss) is 60V.

  2. What is the typical on-resistance of the 2N7002 TR PBFREE?

    The typical on-resistance (rDS(ON)) is 7.5Ω.

  3. What is the maximum continuous drain current of the 2N7002 TR PBFREE?

    The maximum continuous drain current (ID) is 115mA at 25°C and 75mA at 100°C.

  4. What is the operating temperature range of the 2N7002 TR PBFREE?

    The operating temperature range is -65°C to +150°C.

  5. Is the 2N7002 TR PBFREE RoHS compliant?

    Yes, the 2N7002 TR PBFREE is lead-free and RoHS compliant.

  6. What is the package style of the 2N7002 TR PBFREE?

    The package style is SOT-23 (SC-59, TO-236).

  7. What are the typical applications of the 2N7002 TR PBFREE?

    Typical applications include high-speed pulsed amplifiers, driver circuits, power management, and automotive and industrial control systems.

  8. What is the maximum gate-source voltage of the 2N7002 TR PBFREE?

    The maximum gate-source voltage (Vgss) is 40V.

  9. What is the thermal resistance of the 2N7002 TR PBFREE?

    The thermal resistance (ΘJA) is 357°C/W.

  10. How many devices are typically included in a reel?

    A reel typically includes 3000 devices.

  11. What is the maximum power dissipation of the 2N7002 TR PBFREE?

    The maximum power dissipation (PD) is 350mW).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):40V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
1,144

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

BAS56 TR
BAS56 TR
Central Semiconductor Corp
DIODE SWITCHING DUAL SOT143
1N4007GPP TR
1N4007GPP TR
Central Semiconductor Corp
DIODE GEN PURP 1KV 1A DO41
BZX84C12 TR PBFREE
BZX84C12 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 12V 350MW SOT23
BZX84C6V2 TR
BZX84C6V2 TR
Central Semiconductor Corp
DIODE ZENER 6.2V 350MW SOT23
1N5245B TR PBFREE
1N5245B TR PBFREE
Central Semiconductor Corp
DIODE ZENER 15V 500MW DO35
BZX84C7V5 TR PBFREE
BZX84C7V5 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 7.5V 350MW SOT23
1N4733A BK PBFREE
1N4733A BK PBFREE
Central Semiconductor Corp
DIODE ZENER 5.1V 1W DO41
1N5350B BK
1N5350B BK
Central Semiconductor Corp
TRANSISTOR
TIP29C PBFREE
TIP29C PBFREE
Central Semiconductor Corp
TRANS NPN 100V 1A TO220-3
TIP125 SL
TIP125 SL
Central Semiconductor Corp
TRANS PNP DARL 60V TO220-3
BCX56-10 TR
BCX56-10 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89
TIP36C TO-247
TIP36C TO-247
Central Semiconductor Corp
TIP36C TO-247