Overview
The Central Semiconductor BAS56 TR is a surface mount silicon dual, isolated high current switching diode. It consists of two electrically isolated ultra-high speed silicon switching diodes manufactured using the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is specifically designed for high speed switching applications, making it suitable for various electronic circuits that require fast and reliable switching performance.
Key Specifications
| Parameter | Symbol | Units | Minimum | Maximum |
|---|---|---|---|---|
| Continuous Reverse Voltage | VR | V | - | 60 |
| Peak Repetitive Reverse Voltage | VRRM | V | - | 60 |
| Continuous Forward Current | IF | mA | - | 200 |
| Peak Repetitive Forward Current | IFRM | mA | - | 400 |
| Peak Forward Surge Current (tp=1.0μs) | IFSM | A | - | 4.0 |
| Peak Forward Surge Current (tp=1.0s) | IFSM | A | - | 1.0 |
| Power Dissipation | PD | mW | - | 350 |
| Operating and Storage Junction Temperature | TJ, Tstg | °C | -65 | 150 |
| Thermal Resistance | ΘJA | °C/W | - | 357 |
| Reverse Current (VR=60V) | IR | nA | - | 100 |
| Forward Voltage (IF=10mA) | VF | V | 0.75 | - |
| Forward Voltage (IF=200mA) | VF | V | 1.0 | - |
| Forward Voltage (IF=500mA) | VF | V | 1.25 | - |
| Junction Capacitance (VR=0, f=1.0MHz) | CJ | pF | - | 2.5 |
| Reverse Recovery Time (IF=IR=400mA, Irr=40mA, RL=100Ω) | trr | ns | - | 6.0 |
| Stored Charge (IF=10mA, VR=5.0V, RL=500Ω) | Qs | pC | - | 50 |
| Forward Recovery Voltage (IF=400mA, tr=30ns) | VFR | V | - | 1.2 |
| Forward Recovery Voltage (IF=400mA, tr=100ns) | VFR | V | - | 1.5 |
Key Features
- High Speed Switching: Designed for ultra-high speed switching applications, making it ideal for circuits requiring fast and reliable switching performance.
- Dual Isolated Diodes: Consists of two electrically isolated diodes, enhancing the versatility and reliability in various circuit designs.
- Surface Mount Package: Packaged in an epoxy molded surface mount SOT-143 case, facilitating easy integration into surface mount technology (SMT) assemblies.
- High Current Capability: Supports continuous forward current up to 200 mA and peak repetitive forward current up to 400 mA.
- Low Forward Voltage Drop: Offers low forward voltage drop, ranging from 0.75 V to 1.25 V depending on the forward current.
- Wide Operating Temperature Range: Operates over a wide junction temperature range of -65°C to +150°C.
Applications
- High Speed Switching Circuits: Suitable for applications requiring fast switching times, such as in high-frequency circuits, switching power supplies, and communication systems.
- Power Management: Can be used in power management circuits where high current and fast switching are necessary.
- Automotive Electronics: Applicable in automotive systems that require reliable and high-speed switching diodes.
- Industrial Control Systems: Useful in industrial control systems where high current and fast switching are critical.
Q & A
- What is the BAS56 TR diode used for?
The BAS56 TR diode is used for high speed switching applications, particularly in circuits that require fast and reliable switching performance.
- What is the package type of the BAS56 TR diode?
The BAS56 TR diode is packaged in an epoxy molded surface mount SOT-143 case.
- What is the maximum continuous forward current of the BAS56 TR diode?
The maximum continuous forward current is 200 mA.
- What is the peak repetitive forward current of the BAS56 TR diode?
The peak repetitive forward current is 400 mA.
- What is the operating temperature range of the BAS56 TR diode?
The operating temperature range is from -65°C to +150°C.
- Is the BAS56 TR diode still in production?
No, the BAS56 TR diode has been discontinued and is classified as End of Life (EOL) by Central Semiconductor Corp.
- What are some potential applications of the BAS56 TR diode?
Potential applications include high speed switching circuits, power management, automotive electronics, and industrial control systems.
- What is the thermal resistance of the BAS56 TR diode?
The thermal resistance (ΘJA) is 357 °C/W.
- What is the junction capacitance of the BAS56 TR diode?
The junction capacitance (CJ) is 2.5 pF at VR=0 and f=1.0MHz.
- How can I find a replacement for the BAS56 TR diode?
Central Semiconductor Corp. can assist in locating an alternate source. You can email your requests to [email protected] for more information.
