1N34A BK
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Central Semiconductor Corp 1N34A BK

Manufacturer No:
1N34A BK
Manufacturer:
Central Semiconductor Corp
Package:
Bulk
Description:
DIODE GEN PURP 75V 50MA DO7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N34A diode, produced by Central Semiconductor Corp, is a point contact Germanium diode housed in a DO7 type package. It is renowned for its exceptional linearity and efficiency, particularly in high-frequency applications. The use of N-type Germanium in its design enhances its electrical properties, making it highly suitable for tasks such as TV image detection, FM detection, and radio AM detection. The diode's low forward voltage drop and superior electron mobility contribute to its precision and efficiency, even at low voltage levels.

Key Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Peak Inverse Voltage, Repetitive PIV IR = 1mA - - 65 V
Reverse Voltage DC VR - - - 20 V
Peak Forward Surge Current, Non-Repetitive IFSM t = 1sec - - 0.5 A
Peak Forward Surge Current, Repetitive IFSR - - - 200mA -
Average Rectified Output Current IO - - - 50mA -
Operating Junction Temperature TJ - - - +75°C -
Storage Temperature Range Tstg - - - −55°C to +75°C -
Forward Voltage Drop VF IF = 5mA - - 1.0 V
Reverse Current IR VR = 10V - - 30μA -
Reverse Current IR VR = 50V - - 500μA -
Junction Capacitance Cj F = 1MHz, V = −1V - - 1pF -
Rectification Efficiency η Vi = 2Vrms, R = 5KΩ, C = 20pF, f = 40MHz 55 - - %

Key Features

  • Low Forward Voltage Drop: The 1N34A diode has an exceptionally low forward voltage drop of around 0.1 volts, which enhances its performance in low-voltage applications.
  • High Linearity and Efficiency: It offers excellent linearity and efficiency, making it suitable for tasks such as TV image detection, FM detection, and radio AM detection.
  • Minimal Leakage Current: The diode features low leakage current, which helps in minimizing power loss in circuits.
  • Flat Junction Capacitance: Ensures stable performance at high frequencies.
  • High Mechanical Strength: Offers durability and reliability in various applications.
  • Germanium Material: The use of N-type Germanium provides superior electron mobility and minimal forward voltage drop, contributing to the diode's precision and efficiency.

Applications

  • TV Image and Video Detection: The 1N34A diode is effective in TV audio and video detectors, contributing to excellent audio and visual outputs.
  • FM and AM Detection: It is prominently used in AM and FM detectors, ratio detectors, and FM discriminators due to its ability to demodulate signals with precision.
  • Radio Frequency Applications: The diode is instrumental in radio frequency applications, handling high-frequency signals with minimal distortion.
  • Signal Processing and Stabilization: It is used in radios and televisions for swift signal processing and stabilization, becoming essential in rectification and switching operations.

Q & A

  1. What is the peak inverse voltage of the 1N34A diode?

    The peak inverse voltage of the 1N34A diode is 65V.

  2. What is the maximum forward surge current of the 1N34A diode?

    The maximum forward surge current (non-repetitive) is 0.5A, and the repetitive forward surge current is 200mA.

  3. What is the operating junction temperature range of the 1N34A diode?

    The operating junction temperature range is from −55°C to +75°C.

  4. What is the average rectified output current of the 1N34A diode?

    The average rectified output current is 50mA.

  5. Why is the 1N34A diode preferred in high-frequency applications?

    The 1N34A diode is preferred due to its low forward voltage drop, high linearity, and efficiency, making it suitable for tasks like signal detection and RF demodulation.

  6. What material is used in the 1N34A diode?

    The 1N34A diode uses N-type Germanium.

  7. What are the typical applications of the 1N34A diode?

    The typical applications include TV image and video detection, FM and AM detection, and other radio frequency applications.

  8. What are the key features of the 1N34A diode?

    The key features include low forward voltage drop, high linearity and efficiency, minimal leakage current, flat junction capacitance, and high mechanical strength.

  9. Is the 1N34A diode RoHS compliant?

    No, the 1N34A diode is not RoHS compliant.

  10. What is the package type of the 1N34A diode?

    The 1N34A diode is housed in a DO7 type package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):50mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 5 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 50 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AA, DO-7, Axial
Supplier Device Package:DO-7
Operating Temperature - Junction:-55°C ~ 75°C
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