2N7002 BK PBFREE
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Central Semiconductor Corp 2N7002 BK PBFREE

Manufacturer No:
2N7002 BK PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Box
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002 BK PBFREE is an N-Channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. This device is designed using the N-Channel DMOS process and is optimized for high-speed pulsed amplifier and driver applications. It is packaged in a surface-mount SOT-23 (SC-59, TO-236) case, making it suitable for a wide range of electronic designs where space efficiency is crucial.

Key Specifications

Parameter Value Units
FET Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance-Max (rDS(ON)) 7.5 Ω
Rated Power Dissipation (PD) 350 mW
Gate-Source Voltage-Max (Vgss) 40 V
Drain Current (ID) 115 mA
Operating Temp Range -65°C to +150°C
Gate Source Threshold (VGS(th)) 2.5 V
Input Capacitance 50 pF
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Enhancement-Mode Operation: The 2N7002 BK PBFREE operates in enhancement mode, requiring a positive gate-source voltage to create a conductive channel.
  • Low On-Resistance: It features a low drain-source on-resistance (rDS(ON)) of up to 7.5 Ω, which minimizes power losses during operation.
  • High Speed Pulsed Capability: Designed for high-speed pulsed amplifier and driver applications, this MOSFET can handle maximum pulsed drain currents of up to 800 mA.
  • Compact Packaging: The SOT-23 package is compact and suitable for surface-mount technology, making it ideal for space-constrained designs.
  • Wide Operating Temperature Range: The device can operate over a temperature range of -65°C to +150°C, making it versatile for various environmental conditions.

Applications

  • High-Speed Pulsed Amplifiers: The 2N7002 BK PBFREE is well-suited for applications requiring high-speed switching and low on-resistance.
  • Driver Circuits: It can be used in driver circuits for motors, LEDs, and other loads that require high current and low voltage drop.
  • Switching Power Supplies: Its low on-resistance and high switching speed make it a good choice for switching power supply designs.
  • General Purpose Switching: The MOSFET can be used in various general-purpose switching applications where a compact, low-power solution is needed.

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the 2N7002 BK PBFREE?

    The maximum drain-to-source voltage (Vdss) is 60 V.

  2. What is the typical on-resistance (rDS(ON)) of the 2N7002 BK PBFREE?

    The typical on-resistance (rDS(ON)) is up to 7.5 Ω.

  3. What is the maximum continuous drain current (ID) of the 2N7002 BK PBFREE?

    The maximum continuous drain current (ID) is 115 mA at 25°C and 75 mA at 100°C.

  4. What is the operating temperature range of the 2N7002 BK PBFREE?

    The operating temperature range is -65°C to +150°C.

  5. What is the package type of the 2N7002 BK PBFREE?

    The package type is SOT-23 (SC-59, TO-236).

  6. Is the 2N7002 BK PBFREE lead-free?
  7. What are the typical applications of the 2N7002 BK PBFREE?
  8. What is the maximum pulsed drain current (IDM) of the 2N7002 BK PBFREE?
  9. What is the gate-source threshold voltage (VGS(th)) of the 2N7002 BK PBFREE?
  10. What is the input capacitance of the 2N7002 BK PBFREE?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.59 nC @ 4.5 V
Vgs (Max):40V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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