Overview
The Central Semiconductor 2N6027 PBFREE is a silicon programmable unijunction transistor (UJT) designed for adjustable (programmable) characteristics. It is manufactured in an epoxy molded package, specifically the TO-92 case, and is lead-free (Pb-free). This device is ideal for applications requiring programmable Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η).
Key Specifications
| Parameter | Symbol | Units | Minimum | Maximum |
|---|---|---|---|---|
| Gate-Cathode Forward Voltage | VGKF | V | - | 40 |
| Gate-Cathode Reverse Voltage | VGKR | V | - | 5.0 |
| Gate-Anode Reverse Voltage | VGAR | V | - | 40 |
| Anode-Cathode Voltage | VAK | V | - | 40 |
| Peak Non-Repetitive Forward Current (t=10μs) | ITSM | A | - | 5.0 |
| Peak Repetitive Forward Current (t=20μs, D.C.=1.0%) | ITRM | A | - | 2.0 |
| Peak Repetitive Forward Current (t=100μs, D.C.=1.0%) | ITRM | A | - | 1.0 |
| DC Forward Anode Current | IT | mA | - | 150 |
| DC Gate Current | IG | mA | - | 50 |
| Power Dissipation | PD | mW | - | 300 |
| Operating Junction Temperature | TJ | °C | -50 | +100 |
| Storage Temperature | Tstg | °C | -55 | +150 |
Key Features
- Programmable characteristics: Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η)
- Epoxy molded package in TO-92 case
- Lead-free (Pb-free) version available
- High operating temperature range: -50°C to +100°C
- Low power dissipation: 300 mW
- High peak non-repetitive forward current: up to 5.0 A (t=10μs)
Applications
- Pulse generators and oscillators
- Timing circuits and delay lines
- Sensing and triggering circuits
- Relay and switch control circuits
- Other applications requiring programmable unijunction transistor characteristics
Q & A
- What is the 2N6027 PBFREE used for?
The 2N6027 PBFREE is used in applications requiring programmable unijunction transistor characteristics, such as pulse generators, timing circuits, and sensing circuits.
- What is the maximum operating temperature of the 2N6027 PBFREE?
The maximum operating temperature is +100°C.
- What is the power dissipation of the 2N6027 PBFREE?
The power dissipation is 300 mW.
- What is the maximum DC forward anode current of the 2N6027 PBFREE?
The maximum DC forward anode current is 150 mA.
- Is the 2N6027 PBFREE lead-free?
- What is the package type of the 2N6027 PBFREE?
The package type is TO-92.
- What are the programmable characteristics of the 2N6027 PBFREE?
The programmable characteristics include Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η).
- What is the maximum gate-cathode forward voltage of the 2N6027 PBFREE?
The maximum gate-cathode forward voltage is 40 V.
- What is the storage temperature range of the 2N6027 PBFREE?
The storage temperature range is -55°C to +150°C.
- Where can I find more detailed specifications and application notes for the 2N6027 PBFREE?
You can find detailed specifications and application notes on the Central Semiconductor website or through authorized distributors like Mouser Electronics.
