Overview
The 2N6028RLRAG is a programmable unijunction transistor (PUT) produced by ON Semiconductor. This device is designed to allow engineers to program unijunction characteristics such as the interbase resistance (RBB), the intrinsic stand-off ratio (η), the valley current (IV), and the peak current (IP) by selecting two external resistor values. This flexibility makes it highly versatile for various applications. The 2N6028RLRAG is supplied in an inexpensive TO-92 plastic package, which is suitable for high-volume requirements and adaptable for use in automatic insertion equipment.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Power Dissipation | PF | - | 300 | - | mW |
| DC Forward Anode Current | IT | - | 150 | - | mA |
| DC Gate Current | IG | - | -50 | - | mA |
| Repetitive Peak Forward Current (100 μs Pulse Width, 1% Duty Cycle) | ITRM | - | 1.0 | - | A |
| Non-Repetitive Peak Forward Current (10 μs Pulse Width) | ITSM | - | 5.0 | - | A |
| Gate to Cathode Forward Voltage | VGKF | - | 40 | - | V |
| Gate to Cathode Reverse Voltage | VGKR | - | -5.0 | - | V |
| Gate to Anode Reverse Voltage | VGAR | - | 40 | - | V |
| Anode to Cathode Voltage | VAK | - | ±40 | - | V |
| Forward Voltage (IF = 50 mA Peak) | VF | - | 0.8 | 1.5 | V |
| Peak Output Voltage | - | - | - | 11 | V |
| Offset Voltage (RG = 10 kΩ) | VT | 0.2 | 0.35 | 1.6 | V |
| Valley Current (VS = 10 Vdc, RG = 10 kΩ) | IV | - | 1.5 | - | mA |
| Gate to Anode Leakage Current (VS = 40 Vdc, TA = 25°C, Cathode Open) | IGAO | - | - | 10 | nA |
Key Features
- Programmable - RBB, η, IV, and IP by selecting two external resistor values.
- Low On-State Voltage - 1.5 V Maximum at IF = 50 mA.
- Low Gate to Anode Leakage Current - 10 nA Maximum.
- High Peak Output Voltage - 11 V Typical.
- Low Offset Voltage - 0.35 V Typical (RG = 10 kΩ).
- Pb-Free Packages are Available.
Applications
The 2N6028RLRAG is suitable for a variety of applications, including:
- Thyristor-trigger circuits.
- Oscillator circuits.
- Pulse and timing circuits.
- Special thyristor applications due to the availability of an anode gate.
Q & A
- What is the 2N6028RLRAG?
The 2N6028RLRAG is a programmable unijunction transistor (PUT) produced by ON Semiconductor.
- What are the key programmable characteristics of the 2N6028RLRAG?
The device allows programming of interbase resistance (RBB), intrinsic stand-off ratio (η), valley current (IV), and peak current (IP) by selecting two external resistor values.
- What is the maximum on-state voltage of the 2N6028RLRAG?
The maximum on-state voltage is 1.5 V at IF = 50 mA.
- What is the typical peak output voltage of the 2N6028RLRAG?
The typical peak output voltage is 11 V.
- What are the common applications of the 2N6028RLRAG?
Common applications include thyristor-trigger circuits, oscillator circuits, pulse and timing circuits, and special thyristor applications.
- What package type is the 2N6028RLRAG available in?
The device is supplied in a TO-92 plastic package.
- Is the 2N6028RLRAG Pb-Free?
- What is the maximum DC forward anode current for the 2N6028RLRAG?
The maximum DC forward anode current is 150 mA.
- What is the gate to anode leakage current of the 2N6028RLRAG?
The gate to anode leakage current is 10 nA maximum.
- What is the typical valley current of the 2N6028RLRAG?
The typical valley current is 1.5 mA (VS = 10 Vdc, RG = 10 kΩ).
