Overview
The 2N6028RLRMG is a Programmable Unijunction Transistor (PUT) manufactured by ON Semiconductor. This device is designed to allow engineers to program unijunction characteristics such as RBB, η, IV, and IP by selecting two resistor values. It is supplied in a TO-92 plastic package, making it suitable for high-volume requirements and adaptable for use in automatic insertion equipment.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation | PF | 300 | mW |
| Derate Above 25°C | - | 4.0 | mW/°C |
| DC Forward Anode Current | IT | 150 | mA |
| Derate Above 25°C | - | 2.67 | mA/°C |
| DC Gate Current | IG | -50 | mA |
| Repetitive Peak Forward Current (100 μs Pulse Width, 1% Duty Cycle) | ITRM | 1.0 | A |
| Non-Repetitive Peak Forward Current (10 μs Pulse Width) | ITSM | 5.0 | A |
| Gate to Cathode Forward Voltage | VGKF | 40 | V |
| Gate to Cathode Reverse Voltage | VGKR | -5.0 | V |
| Gate to Anode Reverse Voltage | VGAR | 40 | V |
| Anode to Cathode Voltage | VAK | ±40 | V |
| Peak Current (VS = 10 Vdc, RG = 10 kΩ) | IP | 1.25 - 5.0 | μA |
| Offset Voltage (VS = 10 Vdc, RG = 10 kΩ) | VT | 0.35 | V |
| Valley Current (VS = 10 Vdc, RG = 10 kΩ) | IV | 1.0 - 18 | mA |
| Gate to Anode Leakage Current (VS = 40 Vdc, TA = 25°C, Cathode Open) | IGAO | 10 | nA |
| Forward Voltage (IF = 50 mA Peak) | VF | 1.5 | V |
Key Features
- Programmable - RBB, η, IV, and IP by selecting two resistor values.
- Low On-State Voltage - 1.5 V Maximum @ IF = 50 mA.
- Low Gate to Anode Leakage Current - 10 nA Maximum.
- High Peak Output Voltage - 11 V Typical.
- Low Offset Voltage - 0.35 V Typical (RG = 10 kΩ).
- Pb-Free Packages are Available.
Applications
The 2N6028RLRMG is suitable for various applications including:
- Thyristor-trigger circuits.
- Oscillator circuits.
- Pulse and timing circuits.
- Special thyristor applications due to the availability of an anode gate.
Q & A
- What is the 2N6028RLRMG used for?
The 2N6028RLRMG is a Programmable Unijunction Transistor used in applications such as thyristor-trigger, oscillator, pulse, and timing circuits.
- What package type does the 2N6028RLRMG come in?
The 2N6028RLRMG is supplied in a TO-92 plastic package.
- What is the maximum power dissipation of the 2N6028RLRMG?
The maximum power dissipation is 300 mW, with a derate of 4.0 mW/°C above 25°C.
- What is the maximum DC forward anode current for the 2N6028RLRMG?
The maximum DC forward anode current is 150 mA, with a derate of 2.67 mA/°C above 25°C.
- What is the typical forward voltage of the 2N6028RLRMG?
The typical forward voltage is 1.5 V at IF = 50 mA.
- What is the gate to anode leakage current of the 2N6028RLRMG?
The gate to anode leakage current is 10 nA maximum at VS = 40 Vdc and TA = 25°C with the cathode open.
- Can the 2N6028RLRMG be used in high-volume production?
Yes, the device is supplied in a TO-92 package that is readily adaptable for use in automatic insertion equipment, making it suitable for high-volume production.
- Is the 2N6028RLRMG available in Pb-Free packages?
Yes, Pb-Free packages are available for the 2N6028RLRMG.
- What are the typical peak output voltage and valley current of the 2N6028RLRMG?
The typical peak output voltage is 11 V, and the valley current ranges from 1.0 to 18 mA depending on the resistor values used.
- How does the 2N6028RLRMG handle temperature variations?
The device's characteristics such as peak current and valley current vary with temperature, as detailed in the datasheet.
- What are the maximum ratings for gate to cathode and gate to anode reverse voltages?
The maximum gate to cathode reverse voltage is -5.0 V, and the maximum gate to anode reverse voltage is 40 V.
