Overview
The 2N6027RL1 is a Programmable Unijunction Transistor (PUT) produced by onsemi. This device is designed to allow engineers to program unijunction characteristics such as the internal resistance (RBB), the intrinsic stand-off ratio (η), the valley current (IV), and the peak current (IP) by selecting appropriate resistor values. It is packaged in an inexpensive TO-92 plastic package, making it suitable for high-volume applications and automatic insertion equipment.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Power Dissipation | PF | - | - | 300 | mW |
| DC Forward Anode Current | IT | - | - | 150 | mA |
| DC Gate Current | IG | - | - | 50 | mA |
| Repetitive Peak Forward Current (100 μs Pulse Width, 1% Duty Cycle) | ITRM | - | - | 1.0 | A |
| Non-Repetitive Peak Forward Current (10 μs Pulse Width) | ITSM | - | - | 5.0 | A |
| Gate to Cathode Forward Voltage | VGKF | - | - | 40 | V |
| Gate to Cathode Reverse Voltage | VGKR | - | - | -5.0 | V |
| Gate to Anode Reverse Voltage | VGAR | - | - | 40 | V |
| Anode to Cathode Voltage | VAK | - | - | ±40 | V |
| Peak Current (VS = 10 Vdc, RG = 1 MΩ) | IP | - | - | 1.25 | μA |
| Offset Voltage (VS = 10 Vdc, RG = 10 kΩ) | VT | 0.2 | 0.35 | 1.6 | V |
| Valley Current (VS = 10 Vdc, RG = 10 kΩ) | IV | 25 | 50 | 150 | μA |
| Gate to Anode Leakage Current (VS = 40 Vdc, TA = 25°C, Cathode Open) | IGAO | - | - | 10 | nA |
| Forward Voltage (IF = 50 mA Peak) | VF | - | 0.8 | 1.5 | V |
Key Features
- Programmable unijunction characteristics such as RBB, η, IV, and IP by selecting two resistor values.
- Low On-State Voltage: 1.5 V maximum at IF = 50 mA.
- Low Gate to Anode Leakage Current: 10 nA maximum.
- High Peak Output Voltage: 11 V typical.
- Low Offset Voltage: 0.35 V typical (RG = 10 kΩ).
- Pb-Free packages available.
Applications
The 2N6027RL1 is suitable for various applications including:
- Thyristor-trigger circuits.
- Oscillator circuits.
- Pulse and timing circuits.
- Special thyristor applications due to the availability of an anode gate.
Q & A
- What is the 2N6027RL1 used for? The 2N6027RL1 is a Programmable Unijunction Transistor used in applications such as thyristor-trigger, oscillator, pulse, and timing circuits.
- What package type does the 2N6027RL1 come in? The 2N6027RL1 is supplied in a TO-92 plastic package.
- What are the key programmable characteristics of the 2N6027RL1? The key programmable characteristics include RBB, η, IV, and IP, which can be programmed by selecting two resistor values.
- What is the maximum DC forward anode current for the 2N6027RL1? The maximum DC forward anode current is 150 mA.
- What is the typical forward voltage of the 2N6027RL1? The typical forward voltage is 0.8 V at IF = 50 mA.
- What is the maximum gate to anode leakage current? The maximum gate to anode leakage current is 10 nA.
- What is the typical peak output voltage of the 2N6027RL1? The typical peak output voltage is 11 V.
- Is the 2N6027RL1 Pb-Free? Yes, Pb-Free packages are available for the 2N6027RL1.
- What is the maximum anode to cathode voltage? The maximum anode to cathode voltage is ±40 V.
- What is the typical valley current for the 2N6027RL1? The typical valley current is 50 μA (VS = 10 Vdc, RG = 10 kΩ).
