Overview
The 2N6028RLRA is a silicon programmable unijunction transistor (PUT) manufactured by ON Semiconductor. This device is designed to allow engineers to program unijunction characteristics such as the intrinsic standoff ratio (η), valley current (IV), peak current (IP), and other parameters by selecting appropriate resistor values. It is packaged in an inexpensive TO-92 plastic package, making it suitable for high-volume requirements and automatic insertion equipment.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Power Dissipation | PF | - | 300 | - | mW |
| DC Forward Anode Current | IT | - | 150 | - | mA |
| DC Gate Current | IG | - | 50 | - | mA |
| Repetitive Peak Forward Current (100 μs Pulse Width, 1% Duty Cycle) | ITRM | - | 1.0 | - | A |
| Non-Repetitive Peak Forward Current (10 μs Pulse Width) | ITSM | - | 5.0 | - | A |
| Gate to Cathode Forward Voltage | VGKF | - | 40 | - | V |
| Gate to Cathode Reverse Voltage | VGKR | - | 5.0 | - | V |
| Gate to Anode Reverse Voltage | VGAR | - | 40 | - | V |
| Anode to Cathode Voltage | VAK | - | ±40 | - | V |
| Forward Voltage (IF = 50 mA Peak) | VF | - | 0.8 | 1.5 | V |
| Gate to Anode Leakage Current | IGAO | - | - | 10 | nA |
Key Features
- Programmable characteristics: RBB, η, IV, and IP by selecting two resistor values.
- Low On-State Voltage: 1.5 V maximum at IF = 50 mA.
- Low Gate to Anode Leakage Current: 10 nA maximum.
- High Peak Output Voltage: 11 V typical.
- Low Offset Voltage: 0.35 V typical (RG = 10 kΩ).
- Pb-Free packages available.
Applications
The 2N6028RLRA is suitable for various applications including:
- Thyristor-trigger circuits.
- Oscillator circuits.
- Pulse and timing circuits.
- Special thyristor applications due to the availability of an anode gate.
Q & A
- What is the 2N6028RLRA?
The 2N6028RLRA is a silicon programmable unijunction transistor (PUT) manufactured by ON Semiconductor.
- What are the programmable characteristics of the 2N6028RLRA?
The device allows programming of characteristics such as RBB, η, IV, and IP by selecting two resistor values.
- What is the maximum DC forward anode current for the 2N6028RLRA?
The maximum DC forward anode current is 150 mA.
- What is the typical forward voltage at IF = 50 mA?
The typical forward voltage at IF = 50 mA is 0.8 V, with a maximum of 1.5 V.
- What are the maximum repetitive peak forward currents for different pulse widths?
The maximum repetitive peak forward currents are 1.0 A for 100 μs pulse width, 2.0 A for 20 μs pulse width, and 5.0 A for 10 μs pulse width.
- What is the gate to anode leakage current?
The gate to anode leakage current is 10 nA maximum.
- What are the typical applications of the 2N6028RLRA?
Typical applications include thyristor-trigger circuits, oscillator circuits, pulse and timing circuits, and special thyristor applications.
- What package type is the 2N6028RLRA available in?
The device is available in a TO-92 plastic package.
- Is the 2N6028RLRA Pb-Free?
- What is the operating junction temperature range for the 2N6028RLRA?
The operating junction temperature range is -50°C to +100°C.
- What is the storage temperature range for the 2N6028RLRA?
The storage temperature range is -55°C to +150°C.
