2N6028RLRPG
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onsemi 2N6028RLRPG

Manufacturer No:
2N6028RLRPG
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The 2N6028RLRPG is a Programmable Unijunction Transistor (PUT) produced by ON Semiconductor. This device is designed to enable engineers to program unijunction characteristics such as RBB, η, IV, and IP by selecting two resistor values. It is particularly useful in various applications including thyristor-trigger, oscillator, pulse, and timing circuits. The 2N6028RLRPG is supplied in an inexpensive TO-92 plastic package, making it suitable for high-volume requirements and adaptable for use in automatic insertion equipment.

Key Specifications

SpecificationValueUnit
Power Dissipation300mW
DC Forward Anode Current150mA
Repetitive Peak Forward Current (100 μs Pulse Width, 1% Duty Cycle)1.0A
Non-Repetitive Peak Forward Current (10 μs Pulse Width)5.0A
Gate to Cathode Forward Voltage40V
Gate to Cathode Reverse Voltage-5.0V
Gate to Anode Reverse Voltage40V
Anode to Cathode Voltage±40V
Operating Temperature-50 to +100°C
Junction Temperature-50 to +125°C
Storage Temperature Range-55 to +150°C
Thermal Resistance, Junction-to-Case75°C/W
Thermal Resistance, Junction-to-Ambient200°C/W
Maximum Lead Temperature for Soldering Purposes260°C
Package / CaseTO-92-3 (TO-226-3)
Mounting StyleThrough Hole

Key Features

  • Programmable - RBB, η, IV, and IP by selecting two resistor values.
  • Low On-State Voltage - 1.5 V Maximum @ IF = 50 mA.
  • Low Gate to Anode Leakage Current - 10 nA Maximum.
  • High Peak Output Voltage - 11 V Typical.
  • Low Offset Voltage - 0.35 V Typical (RG = 10 kΩ).
  • Pb-Free Packages are Available.

Applications

The 2N6028RLRPG is versatile and can be used in various applications, including:

  • Thyristor-trigger circuits.
  • Oscillator circuits.
  • Pulse and timing circuits.
  • Special thyristor applications due to the availability of an anode gate.

Q & A

  1. What is the primary function of the 2N6028RLRPG?
    The primary function of the 2N6028RLRPG is to act as a Programmable Unijunction Transistor (PUT), allowing engineers to program unijunction characteristics by selecting two resistor values.
  2. What package type is the 2N6028RLRPG available in?
    The 2N6028RLRPG is available in a TO-92-3 (TO-226-3) plastic package.
  3. What is the maximum operating temperature for the 2N6028RLRPG?
    The maximum operating temperature for the 2N6028RLRPG is +100°C.
  4. What is the maximum junction temperature for the 2N6028RLRPG?
    The maximum junction temperature for the 2N6028RLRPG is +125°C.
  5. What are some common applications of the 2N6028RLRPG?
    The 2N6028RLRPG is commonly used in thyristor-trigger, oscillator, pulse, and timing circuits, as well as special thyristor applications.
  6. What is the maximum power dissipation of the 2N6028RLRPG?
    The maximum power dissipation of the 2N6028RLRPG is 300 mW.
  7. Is the 2N6028RLRPG available in Pb-Free packages?
    Yes, the 2N6028RLRPG is available in Pb-Free packages.
  8. What is the typical peak output voltage of the 2N6028RLRPG?
    The typical peak output voltage of the 2N6028RLRPG is 11 V.
  9. What is the low gate to anode leakage current of the 2N6028RLRPG?
    The low gate to anode leakage current of the 2N6028RLRPG is 10 nA Maximum.
  10. What is the thermal resistance, junction-to-case, of the 2N6028RLRPG?
    The thermal resistance, junction-to-case, of the 2N6028RLRPG is 75 °C/W.

Product Attributes

Voltage:40V
Power Dissipation (Max):300 mW
Voltage - Output:11V
Voltage - Offset (Vt):600 mV
Current - Gate to Anode Leakage (Igao):10 nA
Current - Valley (Iv):25 µA
Current - Peak:150 nA
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Similar Products

Part Number 2N6028RLRPG 2N6028RLRAG 2N6028RLRMG 2N6028RLRP
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
Voltage 40V 40V 40V 40V
Power Dissipation (Max) 300 mW 300 mW 300 mW 300 mW
Voltage - Output 11V 11V 11V 11V
Voltage - Offset (Vt) 600 mV 600 mV 600 mV 600 mV
Current - Gate to Anode Leakage (Igao) 10 nA 10 nA 10 nA 10 nA
Current - Valley (Iv) 25 µA 25 µA 25 µA 25 µA
Current - Peak 150 nA 150 nA 150 nA 150 nA
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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