Overview
The 2N6027RL1G is a Programmable Unijunction Transistor (PUT) produced by ON Semiconductor. This device is designed to allow engineers to 'program' unijunction characteristics such as RBB, η, IV, and IP by selecting two resistor values. It is supplied in an inexpensive TO-92 plastic package, making it suitable for high-volume requirements and adaptable for use in automatic insertion equipment.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Power Dissipation | PF | - | - | 300 | mW |
| DC Forward Anode Current | IT | - | - | 150 | mA |
| Repetitive Peak Forward Current | ITRM | - | - | 1.0 A (100 μs Pulse Width, 1% Duty Cycle) | - |
| Non-Repetitive Peak Forward Current | ITSM | - | - | 5.0 A (10 μs Pulse Width) | - |
| Gate to Cathode Forward Voltage | VGKF | - | - | 40 | V |
| Anode to Cathode Voltage | VAK | - | - | ±40 | V |
| Operating Temperature | TOPR | -50 | - | 100 | °C |
| Junction Temperature | TJ | -50 | - | 125 | °C |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 75 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 200 | °C/W |
| Forward Voltage (IF = 50 mA Peak) | VF | - | 0.8 | 1.5 | V |
| Peak Output Voltage (VG = 20 Vdc, CC = 0.2 μF) | Vo | 6.0 | 11 | - | V |
| Pulse Voltage Rise Time (VB = 20 Vdc, CC = 0.2 μF) | tr | - | 40 | 80 | ns |
Key Features
- Programmable - RBB, η, IV, and IP by selecting two resistor values.
- Low On-State Voltage - 1.5 V Maximum @ IF = 50 mA.
- Low Gate to Anode Leakage Current - 10 nA Maximum.
- High Peak Output Voltage - 11 V Typical.
- Low Offset Voltage - 0.35 V Typical (RG = 10 kΩ).
- Pb-Free Packages are Available.
Applications
The 2N6027RL1G is suitable for various applications including thyristor-trigger circuits, oscillators, pulse and timing circuits, and special thyristor applications due to the availability of an anode gate.
Q & A
- What is the 2N6027RL1G? The 2N6027RL1G is a Programmable Unijunction Transistor (PUT) produced by ON Semiconductor.
- What package type does the 2N6027RL1G come in? It is supplied in a TO-92 plastic package.
- What are the key programmable characteristics of the 2N6027RL1G? The device allows programming of RBB, η, IV, and IP by selecting two resistor values.
- What is the maximum power dissipation of the 2N6027RL1G? The maximum power dissipation is 300 mW.
- What is the maximum DC forward anode current for the 2N6027RL1G? The maximum DC forward anode current is 150 mA.
- What is the typical forward voltage of the 2N6027RL1G? The typical forward voltage is 0.8 V to 1.5 V at IF = 50 mA peak.
- What are some common applications of the 2N6027RL1G? It is used in thyristor-trigger circuits, oscillators, pulse and timing circuits, and special thyristor applications.
- What is the operating temperature range of the 2N6027RL1G? The operating temperature range is -50°C to +100°C.
- Is the 2N6027RL1G available in Pb-Free packages? Yes, Pb-Free packages are available.
- What is the thermal resistance, junction-to-case for the 2N6027RL1G? The thermal resistance, junction-to-case is 75°C/W.
